smd transistor ISS
Abstract: smd transistor 26 2SK3902 TRANSISTOR SMD 15a 30A90
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1 2.54
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2SK3902
O-263
smd transistor ISS
smd transistor 26
2SK3902
TRANSISTOR SMD 15a
30A90
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Untitled
Abstract: No abstract text available
Text: Transistors MOSFET IC SMD Type Product specification 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1
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2SK3902
O-263
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2
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2SK3899
O-263
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Untitled
Abstract: No abstract text available
Text: MOSFET Transistors IC SMD Type Product specification 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2
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2SK3900
O-263
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smd transistor ISS
Abstract: 2SK3899 2SK38
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2
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2SK3899
O-263
smd transistor ISS
2SK3899
2SK38
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smd transistor ISS
Abstract: 2SK3900
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2 +0.2
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2SK3900
O-263
smd transistor ISS
2SK3900
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smd transistor ISS
Abstract: mosfet 20v 30A 2SK3901 SMD Transistor MU
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3901 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low On-state resistance 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1950 pF TYP. +0.2 2.54-0.2 +0.2 15.25-0.2 RDS on 2 = 16.5 mÙ MAX. (VGS = 4.5 V, ID = 30A)
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2SK3901
O-263
smd transistor ISS
mosfet 20v 30A
2SK3901
SMD Transistor MU
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smd diodes s4 1.5w
Abstract: PD9002 QR204 A4A smd SMD a3a GENERAL SEMICONDUCTOR SMD DIODES s4 smd code marking a3a QR208 QR217 smd code marking a4a
Text: Semelab Limited High Reliability and Screening Options DOC 2624 ISS 8 Contents 1. Introduction. 1 2. Quality Approvals . 2
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QR209
BS9300
QR216
QR204
MIL-PRF-19500
smd diodes s4 1.5w
PD9002
QR204
A4A smd
SMD a3a
GENERAL SEMICONDUCTOR SMD DIODES s4
smd code marking a3a
QR208
QR217
smd code marking a4a
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irf360lc
Abstract: ID 9302 IRFP360LC IRFPE30
Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω
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IRFP360LC
IRFPE30
irf360lc
ID 9302
IRFP360LC
IRFPE30
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irf460lc
Abstract: IRF460 power mosfet 500v 20a circuit IRFP460LC equivalent IRFP460LC IRFPE30 IRF460L
Text: Previous Datasheet Index Next Data Sheet PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
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IRFP460LC
stanFPE30
irf460lc
IRF460
power mosfet 500v 20a circuit
IRFP460LC equivalent
IRFP460LC
IRFPE30
IRF460L
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IRFPC60LC
Abstract: IRFPE30
Text: Previous Datasheet Index Next Data Sheet PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
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IRFPC60LC
stanFPE30
IRFPC60LC
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω
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IRFP350LC
08-Mar-07
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IRFP360LC
Abstract: IRFPE30
Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω
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IRFP360LC
12-Mar-07
IRFP360LC
IRFPE30
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IRF350LC
Abstract: IRFP350LC IRFPE30
Text: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω
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IRFP350LC
12-Mar-07
IRF350LC
IRFP350LC
IRFPE30
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transistor 2N4033
Abstract: 2N4031 2N4033 2N4032 2N4030
Text: N AMER PH ILI PS/ DI SC RET E bTE T> • ^1,33^31 DD2fil4t ISS M A P X _ ' _ \ ^2N 4030 to 2N 4033 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes primarily intended for large signal, low-noise, low-power
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2N4030
2N4033
2N4031
2N4032
2N4032
2N4031
transistor 2N4033
2N4033
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR M EDIU M POWER HIGH GAIN TRANSISTOR ISS U E 1 - SEPT EM BER 1997 _ FZT1053A _ _ FEATURES VCE0= 75 V 4.5 Am p Continuous Current 10 Am p Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance;
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OT223
FZT1053A
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Untitled
Abstract: No abstract text available
Text: 2N6038 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6038 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-126 V o m MAXIMUM RATINGS 4.0 A Ic 8.0 A PEAK P d iss 60 V 40 W @ Te # 25 °C
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2N6038
O-126
15OOO
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZTA92 ISS U E 2 - JA N U A R Y 1996 O FEATURES * High breakdown voltage APPLICATIONS * Suitable for video output stages in TV sets and switch mode power supplies C O M PLIM EN TARY TYPE PARTMARKING DETAIL -
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OT223
FZTA92
FZTA42
-200V,
-20mA,
-10mA,
20MHz
FMMTA92
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Untitled
Abstract: No abstract text available
Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISS U E 3 - N O V EM B ER 1995_ FEATURES * 625mW POWER DISSIPATIO N * * * * * lc C O N T 3 A 12A Peak Pulse Current Excellent HF£ Characteristics Up To 12A (pulsed)
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
100mA
FMMT618
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Untitled
Abstract: No abstract text available
Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIM INARY DATA SH EET ISS U E B JU LY 1997 FEATURES * Compact package * * * * Low on state losses Low drive requirem ents Operates up to 40V supply 2 A m p continuous rating ^ L J SM-8 8 LEAD SOT223 PARTMARKING DETAIL - ZHB6790
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ZHB6790
OT223)
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2SK546
Abstract: No abstract text available
Text: Ordering number: EN 1790B N 0.179 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage
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1790B
l790B
2SK546
-10UA
SC-43
2SK546
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2N3553
Abstract: No abstract text available
Text: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS 1.0 A V Ie o m 40 V Pd iss 7.0 W @ Te = 25 OC Tj -65 OC to +200 OC Ts t g
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2N3553
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 27E D 4302271 0Q1S7DD '¿M m m i* I HAS •*rm. ir-tt-szs Amplifier Transistors Continued Junction FETs — P-Channel 9fs /imho PACKAGE" Min > "> PART NUMBER >DSS mA Min Max Min BVqsS V Min C|ss ISS Max •gss nA Max Max Max pF
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2N2609
2N5460
2N5461
2N5462
2N5463
2N5464
2N5465
32typ
31typ
100Hz
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2SK546
Abstract: No abstract text available
Text: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage
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1790B
l790B
2SK546
-10uA
2034/2034A
SC-43
7tlt17D7b
2SK546
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