sk 0632
Abstract: No abstract text available
Text: NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • OUTPUT POWER AND EFFICIENCY HIGH P out 18W 42.5 dBm Typ PidB for NEZ5964-15D/15DL 9W (39.5 dBm) Typ P idB for NEZ5964-8D/8DL 4.5W (36.5 dbm) Typ PidB for NEZ5964-4D/40L
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NEZ5964-15D/15DL
NEZ5964-8D/8DL
NEZ5964-4D/40L
NEZ5964-15D
NEZ5964-15DL
NEZ5964-8D
NEZ5964-8DL
NEZ5964-4D
NEZ5964-4DL
-15DL
sk 0632
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2sa1424
Abstract: NE88900 NE889
Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in
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NE88900
NE88912
NE88933
NE88935
NE88900,
NE88912,
NE88933,
NE88935
OT-23)
2sa1424
NE889
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2SC2570
Abstract: 2sc2570 transistor NE02132
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,
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NE021
NE02107
PACKAGEOUTUNE33
OT-23)
b427525
00b5b07
2SC2570
2sc2570 transistor
NE02132
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ne800299
Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
Text: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY
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NE800196
NE800296
NE8001
NE8002
lS21l
lS22l
IS12I
L42752S
ne800299
NE800199
NE800200
40MAG
NE800
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NE72089A
Abstract: NE720 MB427 ne72089 NE72000 2SK354A RN50
Text: NEC GENERAL PURPOSE GaAs MESFET FEATURES NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7dB at8G H z • HIGH ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB at 8 GHz m "D HIGH MAXIMUM AVAILABLE GAIN 16.0 dB at 4 GHz
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NE720
NE72089A
NE72000)
NE72089A)
NE72000
PACKAGEOUTUNE89A
NE72000M
MB427
ne72089
2SK354A
RN50
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series
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NE74000
NE74014
NE740
NE90115
MIL-S-19500.
IS12I
427SB5
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Untitled
Abstract: No abstract text available
Text: NEZ5964-15D NEZ5964-15DD NEZ5964-8D NEZ5964-8DD NEZ5964-4D NEZ5964-4DD C-BAND POWER GaAs MESFET O UTPUT POWER AND EFFICIENCY FEATURES HIGH P o u t 18W 42.5 dBm Typ P id B for NEZ5964-15D /15D D 9W (39.5 dBm) Typ P id B for NEZ5964-8D/8D D 4.5W (36.5 dbm) Typ P id B for NEZ5964-4D/4DD
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NEZ5964-15D
NEZ5964-15DD
NEZ5964-8D
NEZ5964-8DD
NEZ5964-4D
NEZ5964-4DD
NEZ5964-15D
NEZ5964-8D/8D
NEZ5964-4D/4DD
-15DD
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Untitled
Abstract: No abstract text available
Text: 3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2748T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 6mA FEATURES 2.8 dB NOISE FIG URE LOW VO LTA G E - LOW CU RREN T: 6 mA at 3 V GS LOW PO W ER CO NSU M PTIO N: 18 mW TYP SUPER SM A LL PACKAG E 3.5 TAPE AN D REEL PAC KAG ING OPTIO N AVA ILAB LE
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UPC2748T
2748T
UPC2748T-E3
b4Z75E5
DDLST73
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IS12I
Abstract: NE334S01
Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE334S01 FEATURES_ MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.25 dB TYP at 4 GHz 24 - — -
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NE334S01
NE334S01
NE334S01-T1
NE334S01-T1B
24-Hour
IS12I
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ET 8211
Abstract: No abstract text available
Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 20 mA FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CO HIGH ASSOCIATED GAIN:
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OT-343)
NE34018
NE34018
NE34018-TI-63
NE34018-TI-64
24-Hour
ET 8211
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Untitled
Abstract: No abstract text available
Text: |\|EC SUPER LOW NOISE C TO KA BAND AMPLIFIER NE27200 N-CHANNEL HJ FET CHIP FEATURES_ OUTLINE DIMENSIONS Units in nm • S U P E R L O W N O IS E FIG U R E : 0.45 dB TYP at 12 GHz CHIP • H IG H A S S O C IA T E D G A IN : 12.5 dB TYP at 12 GHz
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NE27200
NE27200
IS12S21I
24-Hour
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Untitled
Abstract: No abstract text available
Text: C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES_ NE32500 OUTLINE DIMENSIONS Units in nm • S U P E R L O W N O IS E FIG U R E : 0.45 dB TYP at 12 GHz CHIP • H IG H A S S O C IA T E D G A IN : 12.5 dB TYP at 12 GHz
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NE32500
NE32500
IS12S21I
24-Hour
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Nec 4558 c
Abstract: NE33284A-SL NE33284AS 33284a
Text: NEC SUPER LOW NOISE HJ FET FEATURES NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA V ER Y LO W NO ISE FIG URE: 0.8 dB typical at 12 GHz HIG H A S S O C IA T E D G AIN : 10.5 dB Typical at 12 GHz m G A TE LE N G T H : 0.3 urn «
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NE33284A
NE33284A
NE33284AS
NE33284A-T1
84ASL
NE33284A-SL.
Nec 4558 c
NE33284A-SL
33284a
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transistor NEC D 882
Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION
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NE856
24-Hour
transistor NEC D 882
56E-18
0107 NA SILICON TRANSISTORS
transistor Bf 966
XO 202 na
tq55
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date sheet ic 7483
Abstract: uc 3843 gm 8 pin ic 9435 9435 GM
Text: PRELIMINARY DATA SHEET NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF = 0.9 dB TYP, G a = 10 dB TYP at f = 12 GHz • 6 PIN SUPER MINIMOLD PACKAGE
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NE429M01
NE429M01
NE429M01-T1
24-Hour
date sheet ic 7483
uc 3843 gm
8 pin ic 9435
9435 GM
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NEC Microwave Semiconductors
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES_ Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB V d sx Drain to Source Voltage
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NE6500496
NE6500496
IS12I
IS22I2
IS12S21I
NEC Microwave Semiconductors
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE GaAs MESFET FEATURES • LOW NOISE FIGURE: NF - 0.8 dB typical at f = 4 GHz • HIGH ASSOCIATED GAIN: Ga = 12.0 dB typical at f = 4 GHz • Lg = 1.0 |im, W g = 400 Jim NE7610o NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Id s = 10 mA
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NE7610o
NE76100
NE76100
NE761QQN
NE76100M
98B-3500«
24-Hour
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mje 1303
Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE68Q
NE68800
NE68018-T1
NE68019-T1
NE68030-T1
NE68033-T1B
mje 1303
transistor NEC D 882 p 6V
sg 3852
OPT500
2sc5008
15T09
model RB-30 S PT 100
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Untitled
Abstract: No abstract text available
Text: NECSUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET SPACE QUALIFIED FEATURES_ NE23383B OUTLINE DIMENSIONS • SUPER LOW NOISE FIGURE: (Units in mm) PACKAGE OUTLINE 83B NF = 0.35 dB TVP at f = 4 GHz • HIGH ASSOCIATED GAIN: G a = 15.0 dB TYP at f = 4 GHz
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NE23383B
NE23383B
IS2212
IS12I
IS12S21I
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Transistors BF 494
Abstract: Transistor BJT 547 b transistor kf 469
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)
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NE681
NE68100
NE68118-T1
NE68119-T1
NE68130-T1
NE68133-T1B
NE68135
Transistors BF 494
Transistor BJT 547 b
transistor kf 469
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Untitled
Abstract: No abstract text available
Text: NEC SUPER LOW NOISE HJ FET FEATURES NE329S01 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz • HIGH ASSOCIATED GAIN:
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NE329S01
NE329S01
Rn/50
NE329S01-T1
NE329S01-T1B
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80500 TRANSISTOR
Abstract: No abstract text available
Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES • NE85002 SERIES SELECTION CHART T Y P IC A L P E R F O R M A N C E CLASS A OPERATION • HIGH EFFICIENCY: • BROADBAND CAPABILITY T|ADD > 3 9 % PA RT NUM B ER TYP FR E Q U E N C Y RANGE G H z Po ut (dB m ) N E 8500200
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NE85002
NE8500295
AN-1001
80500 TRANSISTOR
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EZ 707
Abstract: 2SC3544 EZ 0710 EZ 728
Text: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry
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NE944
EZ 707
2SC3544
EZ 0710
EZ 728
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transistor npn c 6073
Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)
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NE681
OT-23)
transistor npn c 6073
433 SOT-23
transistor npn d 2078
944 1L2
NE68139
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