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Vishay Siliconix IRLZ14STRLPBF MOSFET N-CH 60V 10A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRLZ14STRLPBF	Digi-Reel	3,065		1	1 $2.17 10 $1.387 100 $2.17 1000 $2.17 10000 $2.17	Buy Now
	IRLZ14STRLPBF	Cut Tape	3,065		1	1 $2.17 10 $1.387 100 $2.17 1000 $2.17 10000 $2.17	Buy Now
	IRLZ14STRLPBF	Reel	2,400		800	1 - 10 - 100 - 1000 $0.70701 10000 $0.58625	Buy Now
Vishay Siliconix IRLZ14PBF MOSFET N-CH 60V 10A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRLZ14PBF	Tube	1,046		1	1 $1.64 10 $1.64 100 $1.64 1000 $0.5006 10000 $0.4005	Buy Now
New Advantage Corporation	IRLZ14PBF		10,350		1	1 - 10 - 100 - 1000 $0.4429 10000 $0.4429	Buy Now
Vishay Siliconix IRLZ14PBF-BE3 MOSFET N-CH 60V 10A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRLZ14PBF-BE3	Tube	472		1	1 $1.64 10 $1.64 100 $1.64 1000 $0.5006 10000 $0.4005	Buy Now
Vishay Siliconix IRLZ14 MOSFET N-CH 60V 10A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRLZ14	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IRLZ14		159			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRLZ14		127			1 $3.18 10 $3.18 100 $2.12 1000 $1.961 10000 $1.961	Buy Now
Vishay Siliconix IRLZ14S MOSFET N-CH 60V 10A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRLZ14S	Tube			1,000	1 - 10 - 100 - 1000 $1.43602 10000 $1.43602	Buy Now

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IRLZ14 Datasheets (34)

Part	Manufacturer	Description	Datasheet Type	PDF
IRLZ14	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRLZ14	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-220AB	Original	PDF
IRLZ14	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 60V, 10A, Pkg Style TO-220AB	Scan	PDF
IRLZ14	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRLZ14	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRLZ14	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRLZ14	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRLZ14	Unknown	FET Data Book	Scan	PDF
IRLZ14	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRLZ14	Samsung Electronics	N-Channel Logic Level MOSFET	Scan	PDF
IRLZ14A	Samsung Electronics	Advanced Power MOSFET	Scan	PDF
IRLZ14L	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRLZ14L	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRLZ14L	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-262	Original	PDF

IRLZ14L	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRLZ14PBF	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRLZ14PBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-220AB	Original	PDF
IRLZ14PBF-BE3	Vishay Siliconix	MOSFET N-CH 60V 10A TO220AB	Original	PDF
IRLZ14S	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRLZ14S	International Rectifier	HEXFET Power Mosfet	Original	PDF

IRLZ14 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature	Original	PDF	IRLZ14, SiHLZ14 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
marking F53 Abstract: AN-994 IRLZ14 IRLZ14L IRLZ14S Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier	Original	PDF	IRLZ14S/L IRLZ14S) IRLZ14L) 12-Mar-07 marking F53 AN-994 IRLZ14 IRLZ14L IRLZ14S
Untitled Abstract: No abstract text available Text: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature	Original	PDF	IRLZ14, SiHLZ14 O-220AB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)	Original	PDF	IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC O-262)
irlz14 Abstract: No abstract text available Text: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature	Original	PDF	IRLZ14, SiHLZ14 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irlz14
SiHLZ14S Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3 Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single G G S COMPLIANT Third generation Power MOSFETs from Vishay utilize	Original	PDF	IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 18-Jul-08 IRLZ14 IRLZ14L IRLZ14S SiHLZ14S-E3
Untitled Abstract: No abstract text available Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier	Original	PDF	IRLZ14S/L IRLZ14S) IRLZ14L) 08-Mar-07
Untitled Abstract: No abstract text available Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)	Original	PDF	IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC O-262)
AN-994 Abstract: IRLZ14 IRLZ14L IRLZ14S Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier	Original	PDF	IRLZ14S/L IRLZ14S) IRLZ14L) AN-994 IRLZ14 IRLZ14L IRLZ14S
IRLZ14 Abstract: No abstract text available Text: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature	Original	PDF	IRLZ14, SiHLZ14 O-220 O-220 18-Jul-08 IRLZ14
diode 132 E Abstract: diode IR 132 E f1010 9545 Text: PD - 95457 IRLZ14PbF • Lead-Free www.irf.com 1 6/23/04 IRLZ14PbF 2 www.irf.com IRLZ14PbF www.irf.com 3 IRLZ14PbF 4 www.irf.com IRLZ14PbF www.irf.com 5 IRLZ14PbF 6 www.irf.com IRLZ14PbF + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane	Original	PDF	IRLZ14PbF O-220AB. O-220AB diode 132 E diode IR 132 E f1010 9545
Untitled Abstract: No abstract text available Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)	Original	PDF	IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 18-Jul-08
Untitled Abstract: No abstract text available Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)	Original	PDF	IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 11-Mar-11
Untitled Abstract: No abstract text available Text: IRLZ14_RC, SiHLZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRLZ14 SiHLZ14 AN609, CONFIGURATI5-Oct-10 8649m 6211m 0526u 9391m

AN-994 Abstract: IRLZ14 IRLZ14L IRLZ14S Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier	Original	PDF	IRLZ14S/L IRLZ14S) IRLZ14L) AN-994 IRLZ14 IRLZ14L IRLZ14S
IRLZ14L Abstract: IRLZ14S SiHLZ14L SiHLZ14S SiHLZ14STR-E3 Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)	Original	PDF	IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 11-Mar-11 IRLZ14L IRLZ14S SiHLZ14STR-E3
Untitled Abstract: No abstract text available Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay utilize	Original	PDF	IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L IRLZ14S/SiHLZ14S) IRLZ14L/SiHLZ14L) 12-Mar-07
Untitled Abstract: No abstract text available Text: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature	Original	PDF	IRLZ14, SiHLZ14 O-220 O-220 12-Mar-07
Untitled Abstract: No abstract text available Text: PD - 95457 IRLZ14PbF • Lead-Free 1 IRLZ14PbF 2 IRLZ14PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)	Original	PDF	IRLZ14PbF O-220AB O-220AB.
1RFZ44 Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys Text: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS	OCR Scan	PDF	Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 3TO-220 IRL510 O-220 IRL511 1RFZ44 1RL520 1RFZ22 IRFZ30 IRFZ41 IRF145 1RL540 IRFZ45 1xys
IRLZ14 Abstract: No abstract text available Text: International k Rectifier 4A55HS2 0 0 1 5 ^ 5*13 11 NR PD-9.556C IRLZ14 HEXFET® Power MOSFET b5E D INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching	OCR Scan	PDF	4A55HS2 IRLZ14 554S2 IRLZ14
1XYS Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510 Text: - f M € tí: € ft t V ds Vg s or Vd g * V (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N 50 60 60 100 250 500 IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR	OCR Scan	PDF	Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 T0-247 IXTH6N80A O-247 IXTH10N100 1XYS IRFZ41 1XTH5N100 1RLZ34 IRFZ44 IRH254 IRL510
IRLZ14 Abstract: 556C Text: International Rectifier P D -9 .5 5 6 C IRLZ14 HEXFET Power MOSFET • Dynamic dv/dt Rating • Logic-Level Gate Drive ^ dss - 60V • RDS on Specified at V gs =4V & 5V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements	OCR Scan	PDF	IRLZ14 O-220 IRLZ14 556C
IRlZ14 Abstract: IRLZ10 Text: N-CHANNEL LOGIC LEVEL MOSFET IRLZ14/10 FEATURES • Low er R ds< on • Excellent voltage stability • Fast sw itching spe eds • Ru gg ed polysilicon gate cell structure • Lo w er input ca p acita n ce • Extended sa fe operating area • Improved high tem perature reliability	OCR Scan	PDF	IRLZ14/10 IRLZ14 IRLZ10 Ti-25Â

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Vishay Siliconix IRLZ14STRLPBF

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IRLZ14 Datasheets (34)

IRLZ14 Datasheets Context Search

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marking F53

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irlz14

SiHLZ14S

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AN-994

IRLZ14

diode 132 E

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AN-994

IRLZ14L

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1RFZ44

IRLZ14

1XYS

IRLZ14

IRlZ14