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Infineon Technologies AG IRL530NSTRLPBF MOSFET N-CH 100V 17A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL530NSTRLPBF	Cut Tape	19,877		1	1 $1.97 10 $1.257 100 $1.97 1000 $1.97 10000 $1.97	Buy Now
	IRL530NSTRLPBF	Digi-Reel	19,877		1	1 $1.97 10 $1.257 100 $1.97 1000 $1.97 10000 $1.97	Buy Now
	IRL530NSTRLPBF	Reel	19,200		800	1 - 10 - 100 - 1000 $0.63595 10000 $0.53563	Buy Now
Avnet Americas	IRL530NSTRLPBF	Reel		8 Weeks	800	1 - 10 - 100 - 1000 $0.52234 10000 $0.42512	Buy Now
Mouser Electronics	IRL530NSTRLPBF		3,492			1 $1.7 10 $1.16 100 $0.769 1000 $0.561 10000 $0.535	Buy Now
Verical	IRL530NSTRLPBF		4,800		800	1 - 10 - 100 - 1000 $0.5839 10000 $0.5839	Buy Now
	IRL530NSTRLPBF		1,419		30	1 - 10 - 100 $0.6 1000 $0.5888 10000 $0.5888	Buy Now
	IRL530NSTRLPBF		78		13	1 - 10 - 100 $0.533 1000 $0.533 10000 $0.533	Buy Now
Arrow Electronics	IRL530NSTRLPBF		4,800	8 Weeks	800	1 - 10 - 100 - 1000 $0.5589 10000 $0.5589	Buy Now
	IRL530NSTRLPBF	Cut Strips	78	8 Weeks	1	1 $1.5144 10 $1.0521 100 $0.533 1000 $0.533 10000 $0.533	Buy Now

Newark	IRL530NSTRLPBF	Cut Tape	422		1	1 $1.62 10 $1.31 100 $0.939 1000 $0.856 10000 $0.856	Buy Now
	IRL530NSTRLPBF	Reel			800	1 - 10 - 100 - 1000 $0.661 10000 $0.633	Buy Now
Bristol Electronics	IRL530NSTRLPBF		220		5	1 - 10 $1.125 100 $0.4219 1000 $0.4219 10000 $0.4219	Buy Now
	IRL530NSTRLPBF		58		5	1 - 10 $1.125 100 $0.7313 1000 $0.7313 10000 $0.7313	Buy Now
Quest Components	IRL530NSTRLPBF		176			1 $1.5 10 $1.5 100 $0.45 1000 $0.45 10000 $0.45	Buy Now
	IRL530NSTRLPBF		46			1 $1.5 10 $1.2 100 $0.75 1000 $0.75 10000 $0.75	Buy Now
TME	IRL530NSTRLPBF		4,319		1	1 $1.041 10 $0.884 100 $0.641 1000 $0.489 10000 $0.4	Buy Now
Chip1Stop	IRL530NSTRLPBF	Cut Tape	1,419			1 $1.04 10 $0.835 100 $0.57 1000 $0.465 10000 $0.465	Buy Now
EBV Elektronik	IRL530NSTRLPBF			9 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IRL530NSTRLPBF		2,773			1 - 10 - 100 $0.6718 1000 $0.4479 10000 $0.4479	Buy Now
Vishay Siliconix IRL530PBF-BE3 MOSFET N-CH 100V 15A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL530PBF-BE3	Tube	300		1	1 $2.23 10 $2.23 100 $2.23 1000 $2.23 10000 $2.23	Buy Now
Vishay Siliconix IRL530 MOSFET N-CH 100V 15A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL530	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix IRL530L MOSFET N-CH 100V 15A TO262-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL530L	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix IRL530S MOSFET N-CH 100V 15A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL530S	Tube			350	1 - 10 - 100 - 1000 $1.23603 10000 $1.23603	Buy Now

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IRL530 Datasheets (62)

Part	Manufacturer	Description	Datasheet Type	PDF
IRL530	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRL530	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRL530	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15A TO-220AB	Original	PDF
IRL530	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRL530	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRL530	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRL530	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRL530	Unknown	N-Channel Enhancement MOSFET	Scan	PDF
IRL530	Unknown	FET Data Book	Scan	PDF
IRL530	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRL530	Samsung Electronics	N-Channel Logic Level MOSFETS	Scan	PDF
IRL530A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRL530A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRL530A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF

IRL530L	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15A TO-262	Original	PDF
IRL530N	International Rectifier	Hexfet Power Mosfet	Original	PDF
IRL530N	International Rectifier	100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL530N with Standard Packaging	Original	PDF
IRL530N	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRL530N	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRL530N	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF

IRL530 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PD - 95452 IRL530PbF • Lead-Free Document Number: 91299 6/23/04 www.vishay.com 1 IRL530PbF Document Number: 91299 www.vishay.com 2 IRL530PbF Document Number: 91299 www.vishay.com 3 IRL530PbF Document Number: 91299 www.vishay.com 4 IRL530PbF Document Number: 91299	Original	PDF	IRL530PbF 08-Mar-07
IRL530 Abstract: SiHL530 SiHL530-E3 Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRL530, SiHL530 O-220 O-220 18-Jul-08 IRL530 SiHL530-E3
L3103L Abstract: l3103 3103L Text: PD- 95593 IRL530NSPbF IRL530NLPbF Lead-Free www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 www.irf.com IRL530NS/LPbF www.irf.com 5 IRL530NS/LPbF 6 www.irf.com IRL530NS/LPbF Peak Diode Recovery dv/dt Test Circuit	Original	PDF	IRL530NSPbF IRL530NLPbF IRL530NS/LPbF EIA-418. L3103L l3103 3103L
T1 IRL530N Abstract: IRL530N NIRF1010 Text: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier	Original	PDF	91348C IRL530N O-220 NIRF1010 EEK19 O-220AB T1 IRL530N IRL530N NIRF1010
Untitled Abstract: No abstract text available Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.16 Available Qg (Max.) (nC) 28 • Logic-Level Gate Drive Qgs (nC) 3.8 • RDS(on) Specified at VGS = 4 V and 5 V	Original	PDF	IRL530, SiHL530 O-220 O-220 18-Jul-08
Untitled Abstract: No abstract text available Text: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive	Original	PDF	IRL530S, SiHL530S 2002/95/EC O-263) O-263hay 11-Mar-11
Untitled Abstract: No abstract text available Text: PD - 95451 IRL530NPbF • Lead-Free 1 IRL530NPbF 2 IRL530NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)	Original	PDF	IRL530NPbF O-220AB O-220AB.
Untitled Abstract: No abstract text available Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRL530, SiHL530 O-220AB 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
AN609 Abstract: IRL530 SiHL530 Text: IRL530_RC, SiHL530_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRL530 SiHL530 AN609, 4809m 1557m 8444m 8849m 8988m 9986m 3476m AN609
Untitled Abstract: No abstract text available Text: IRL530S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)88 Minimum Operating Temp (øC)-55õ	Original	PDF	IRL530S
IRL530 Abstract: SiHL530 SiHL530-E3 Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRL530, SiHL530 O-220AB 2002/95/EC O-220AB 11-Mar-11 IRL530 SiHL530-E3
irf 210 mosfet Abstract: IRf 48 MOSFET IRL530N Text: Previous Datasheet Index Next Data Sheet PD - 9.1348A IRL530N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V	Original	PDF	IRL530N O-22Y irf 210 mosfet IRf 48 MOSFET IRL530N
IRL530N Abstract: NIRF1010 T1 IRL530N diode avalanche dsa 0,9 14 A Text: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier	Original	PDF	91348C IRL530N O-220 NIRF1010 EEK19 O-220AB IRL530N NIRF1010 T1 IRL530N diode avalanche dsa 0,9 14 A
Untitled Abstract: No abstract text available Text: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier	Original	PDF	91348C IRL530N O-220 NIRF1010 EEK19 O-220AB

Untitled Abstract: No abstract text available Text: IRL530A A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .1 2 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 100V	OCR Scan	PDF	IRL530A O-220
Untitled Abstract: No abstract text available Text: PD-91348B International I ö r Rectifier • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated IRL530N HEXFET Power MOSFET VDSS = 100V R ü S o n =	OCR Scan	PDF
1RFZ44 Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys Text: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS	OCR Scan	PDF	Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 3TO-220 IRL510 O-220 IRL511 1RFZ44 1RL520 1RFZ22 IRFZ30 IRFZ41 IRF145 1RL540 IRFZ45 1xys
Untitled Abstract: No abstract text available Text: IRL530 Advanced Power MOSFET FEATURES B ^ - 100 V ^ D S o n = 0 .1 2 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 100V	OCR Scan	PDF	IRL530
1XYS Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510 Text: - f M € tí: € ft t V ds Vg s or Vd g * V (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N 50 60 60 100 250 500 IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR	OCR Scan	PDF	Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 T0-247 IXTH6N80A O-247 IXTH10N100 1XYS IRFZ41 1XTH5N100 1RLZ34 IRFZ44 IRH254 IRL510
JJ SMD diode Abstract: AN-994 IRL530S SMD-220 smd diode marking mp smd diode JF Text: PD-9.909 International Rectifier IRL530S HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature	OCR Scan	PDF	IRL530S SMD-220 JJ SMD diode AN-994 IRL530S smd diode marking mp smd diode JF
IRL530 Abstract: IRF MOSFET driver Text: IRL530 A dvanced Power MOSFET FEATURES B V DSS — 100 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .1 2 Q 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS= 1 0 0 V	OCR Scan	PDF	IRL530 101S2 IRL530 IRF MOSFET driver
Untitled Abstract: No abstract text available Text: IRL530A A d v a n c e d P ow er MOSEET FEATURES - 100 V ^ D S o n = 0 .1 2 Q B ^D S S • Logic-Level Gate Drive ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge lD = ■ Extended Safe Operating Area	OCR Scan	PDF	IRL530A
IRL530 Abstract: No abstract text available Text: 4ÛS54S2 001SÖS0 3Tb • INR International e Rectifier PD-9.562C IRL530 bSE J> INTERNATIONAL R E C T IF IE R HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V 175°C Operating Temperature	OCR Scan	PDF	S54S2 IRL530 MflS54S2 IRL530
Untitled Abstract: No abstract text available Text: IRL530A Advanced Power MOSFET FEATURES B ^ - 100 V ^ D S o n = 0 .1 2 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 100V	OCR Scan	PDF	IRL530A

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Infineon Technologies AG IRL530NSTRLPBF

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IRL530 Datasheets (62)

IRL530 Datasheets Context Search

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IRL530

L3103L

T1 IRL530N

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AN609

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IRL530

irf 210 mosfet

IRL530N

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1RFZ44

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1XYS

JJ SMD diode

IRL530

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IRL530

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