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    Infineon Technologies AG IRHG57110SCS

    Transistor MOSFET Array Quad N-Channel 100V 1.6A 14-Pin MO-036AB - Bulk (Alt: IRHG57110SCS)
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    IRHG57110 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHG57110 International Rectifier RADIATION HARDENED POWER MOSFET Original PDF
    IRHG57110 International Rectifier 100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package Original PDF

    IRHG57110 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PD - 94432 IRHG57110 100V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE MO-036 RAD-Hard HEXFET 4# TECHNOLOGY Product Summary Part Number Radiation Level IRHG57110 100K Rads (Si) IRHG53110 300K Rads (Si) IRHG54110 600K Rads (Si) IRHG58110 1000K Rads (Si)


    Original     		PDF IRHG57110 MO-036) IRHG53110 IRHG54110 IRHG58110 1000K MO-036AB 100mH, MIL-STD-750,

    IR 9443

    Abstract: IRHG53110 IRHG54110 IRHG57110 IRHG58110 MO-036AB
    Text: PD - 94432B IRHG57110 100V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE MO-036 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHG57110 100K Rads (Si) RDS(on) 0.29Ω ID 1.6A IRHG53110 300K Rads (Si) 0.29Ω 1.6A IRHG54110 500K Rads (Si)


    Original     		PDF 94432B IRHG57110 MO-036) IRHG57110 IRHG53110 IRHG54110 IRHG58110 1000K MO-036AB MIL-STD-750, IR 9443 IRHG53110 IRHG54110 MO-036AB

    IRHG53110

    Abstract: IRHG54110 IRHG57110 IRHG58110 MO-036AB
    Text: PD - 94432A IRHG57110 100V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE MO-036 RAD-Hard HEXFET 4# TECHNOLOGY Product Summary Part Number Radiation Level IRHG57110 100K Rads (Si) RDS(on) 0.29Ω ID 1.6A IRHG53110 300K Rads (Si) 0.29Ω


    Original     		PDF 4432A IRHG57110 MO-036) IRHG57110 IRHG53110 IRHG54110 IRHG58110 1000K 100mH, MIL-STD-750, IRHG53110 IRHG54110 MO-036AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 94432B IRHG57110 100V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE MO-036 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHG57110 100K Rads (Si) RDS(on) 0.29Ω ID 1.6A IRHG53110 300K Rads (Si) 0.29Ω 1.6A IRHG54110 500K Rads (Si)


    Original     		PDF 94432B IRHG57110 MO-036) IRHG57110 IRHG53110 IRHG54110 IRHG58110 1000K MO-036AB MIL-STD-750,

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		PDF 4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original     		PDF 94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS

    2N7550

    Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
    Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators


    Original     		PDF

    RDHA718SD10C1BK

    Abstract: HOW TO DRIVE SSR USING MOSFET DRIVER solar battery charger 12 volt circuit schematic RDHA718SE10A2SK RDHA718SE10A2QK RDHA718SE13A2FK RDHA718FD10C1BK 10 amp 12 volt solar charger circuits OPTO SMD4 RDHA720SF06A1NK
    Text: Application Note AN-1068 revA Considerations for Designs Using Radiation-Hardened Solid State Relays By Alan Tasker Table of Contents Introduction Page Overview .1


    Original     		PDF AN-1068 AN-1068 9x10-3-0 013x10-3x T-298 RDHA718SD10C1BK HOW TO DRIVE SSR USING MOSFET DRIVER solar battery charger 12 volt circuit schematic RDHA718SE10A2SK RDHA718SE10A2QK RDHA718SE13A2FK RDHA718FD10C1BK 10 amp 12 volt solar charger circuits OPTO SMD4 RDHA720SF06A1NK

    IRHNJ597230SCS

    Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
    Text: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5


    Original     		PDF 4047A IRHNJ597130 IRHNJ593130 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNJ597230SCS international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS

    2N7526

    Abstract: 2N7525 IRHG57110 MIL-STD-750 method 3161 MO-036AB 2n7521
    Text: INCH-POUND MIL-PRF-19500/740 13 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND F


    Original     		PDF MIL-PRF-19500/740 2N7521U, 2N7522U, 2N7525, 2N7526, MIL-PRF-19500. 2N7521U 2N7522U 2N7525 2N7526 2N7526 2N7525 IRHG57110 MIL-STD-750 method 3161 MO-036AB 2n7521