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Infineon Technologies AG IRGS4B60KPBF IGBT 600V D2PAK-3
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DigiKey	IRGS4B60KPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRGS4B60KD1PBF IGBT 600V 11A 63W D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRGS4B60KD1PBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	IRGS4B60KD1PBF		100		1	1 $0.8056 10 $0.8056 100 $0.7573 1000 $0.6848 10000 $0.6848	Buy Now
Infineon Technologies AG IRGS4B60KD1TRRP IGBT 600V 11A 63W D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRGS4B60KD1TRRP	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	IRGS4B60KD1TRRP		1,313		281	1 - 10 - 100 - 1000 $1.2113 10000 $1.2113	Buy Now
Rochester Electronics	IRGS4B60KD1TRRP		1,313		1	1 $1.14 10 $1.14 100 $1.07 1000 $0.969 10000 $0.969	Buy Now
Rochester Electronics LLC IRGS4B60KD1TRRP IGBT 11A, 600V, N CHANNEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRGS4B60KD1TRRP	Bulk			259	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Buy Now
Infineon Technologies AG IRGS4B60KD1TRLP IGBT 600V 11A 63W D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRGS4B60KD1TRLP	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	IRGS4B60KD1TRLP	Digi-Reel			1	1 $2.1 10 $2.1 100 $2.1 1000 $2.1 10000 $2.1	Buy Now
	IRGS4B60KD1TRLP	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IRGS4B60K Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
IRGS4B60K	International Rectifier	600V Low VCEon Copack IGBT in a D2Pak package	Original	PDF
IRGS4B60K	International Rectifier	600V Low VCEon Copack IGBT in a D2Pak package; A IRGS4B60K with Standard Packaging	Original	PDF
IRGS4B60KD1	International Rectifier	600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package; A IRGS4B60KD1 with Standard Packaging	Original	PDF
IRGS4B60KD1	International Rectifier	600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package	Original	PDF
IRGS4B60KD1PBF	International Rectifier	600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package; Similar to IRGS4B60KD1 with Lead Free Packaging	Original	PDF
IRGS4B60KD1PBF	International Rectifier		Original	PDF
IRGS4B60KD1TRLP	International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 11A 63W D2PAK	Original	PDF
IRGS4B60KD1TRRP	International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 11A 63W D2PAK	Original	PDF
IRGS4B60KPBF	International Rectifier	600V Low VCEon Copack IGBT in a D2Pak package; Similar to IRGS4B60K with Lead Free Packaging	Original	PDF
IRGS4B60KPBF	International Rectifier		Original	PDF

IRGS4B60K Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C-150 Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5 Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5
Untitled Abstract: No abstract text available Text: PD - 94607B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994.
C-150 Abstract: IRGS4B60KD1 IRGSL4B60KD1 40a 15v diode IGBT 600V 40A diode hexfet 40A 600V Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 O-220 O-220 IRGB4B60KD1PbF O-262 O-220AB. C-150 IRGS4B60KD1 IRGSL4B60KD1 40a 15v diode IGBT 600V 40A diode hexfet 40A 600V
SL4B Abstract: FD059 Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 IRGB4B60KPbF O-262 AN-994. SL4B FD059
Untitled Abstract: No abstract text available Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	PDF	5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994.
igbt 500V 22A Abstract: C-150 IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. igbt 500V 22A C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B
AN-994 Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	PDF	5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1
Untitled Abstract: No abstract text available Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	PDF	5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994.
Untitled Abstract: No abstract text available Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994.
Untitled Abstract: No abstract text available Text: PD - 94633 IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	IRGB4B60K IRGS4B60K IRGSL4B60K O-220 IRGB4B60K IRGS4B60K O-262 AN-994. FD059H06A5.
C-150 Abstract: IRGS4B60K IRGSL4B60K Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	PDF	IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K
C-150 Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	PDF	4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994. C-150 IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K
Untitled Abstract: No abstract text available Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	PDF	IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994.
Untitled Abstract: No abstract text available Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994.

C-150 Abstract: IRGS4B60K IRGSL4B60K Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	PDF	IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K
C-150 Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Text: PD - 94607 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. FD059H06A5. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1
Untitled Abstract: No abstract text available Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	PDF	4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994.
AN-994 Abstract: C-150 IRGS4B60KD1 IRGSL4B60KD1 Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 O-220 O-220 IRGB4B60KD1PbF O-262 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1
AN-994 Abstract: C-150 igbt 400V 40A Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994. AN-994 C-150 igbt 400V 40A
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	PDF	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
IRFP460Z Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205 Text: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB	Original	PDF	O-220 IRFP460Z IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205

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IRGS4B60K Search Results

IRGS4B60K Price and Stock

Infineon Technologies AG IRGS4B60KPBF

Infineon Technologies AG IRGS4B60KD1PBF

Infineon Technologies AG IRGS4B60KD1TRRP

Rochester Electronics LLC IRGS4B60KD1TRRP

Infineon Technologies AG IRGS4B60KD1TRLP

IRGS4B60K Datasheets (10)

IRGS4B60K Datasheets Context Search

C-150

Untitled

C-150

SL4B

Untitled

igbt 500V 22A

AN-994

Untitled

Untitled

Untitled

C-150

C-150

Untitled

Untitled

C-150

C-150

Untitled

AN-994

AN-994

irfb4115

IRU1239SC

IRFP460Z