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    Infineon Technologies AG IRG7PSH73K10PBF

    IGBT TRENCH 1200V 220A SUPER247
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    IRG7PSH73K10PBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PSH73K10PBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 220A 1150W SUPER247 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original
    PDF 7406A IRG7PSH73K10PbF IRFPS37N50A Super-247

    IRG7PSH73K10

    Abstract: IRG7PSH73K10PBF IRG7PSH73 IRFPS37N50A
    Text: PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • VCES = 1200V C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original
    PDF 7406A IRG7PSH73K10PbF IRFPS37N50A Super-247 IRG7PSH73K10 IRG7PSH73K10PBF IRG7PSH73 IRFPS37N50A

    IRG7PSH73K10

    Abstract: IRG7PSH73K10PBF IRG7PSH73 SUPER-247
    Text: PD - 97406 IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • VCES = 1200V C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original
    PDF IRG7PSH73K10PbF Super-247 IRFPS37N50A Super-247 IRG7PSH73K10 IRG7PSH73K10PBF IRG7PSH73