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    IRG4R Price and Stock

    Infineon Technologies AG IRG4RC10K

    IGBT 600V 9A 38W DPAK
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    DigiKey IRG4RC10K Tube 75
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    Infineon Technologies AG IRG4RC10SD

    IGBT 600V 14A 38W DPAK
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    Infineon Technologies AG IRG4RC10KD

    IGBT 600V 9A 38W DPAK
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    Infineon Technologies AG IRG4RC10UD

    IGBT 600V 8.5A 38W DPAK
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    Infineon Technologies AG IRG4RC10STR

    IGBT 600V 14A 38W DPAK
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    DigiKey IRG4RC10STR Reel 2,000
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    Find more IRG4R price and stock on Findchips.com

    IRG4R Datasheets (104)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4RC10 International Rectifier INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, Original PDF
    IRG4RC10K International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak package; A IRG4RC10K with Standard Packaging Original PDF
    IRG4RC10K International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4RC10K International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4RC10KD International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package; A IRG4RC10KD with Standard Packaging Original PDF
    IRG4RC10KD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4RC10KD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRG4RC10KDPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 9A 38W DPAK Original PDF
    IRG4RC10KDPBF International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package; Similar to IRG4RC10KD with Lead Free Packaging Original PDF
    IRG4RC10KDPBF International Rectifier Original PDF
    IRG4RC10KDTRPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 9A 38W DPAK Original PDF
    IRG4RC10KPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 9A 38W DPAK Original PDF
    IRG4RC10KPBF International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak package; Similar to IRG4RC10K with Lead Free Packaging Original PDF
    IRG4RC10KPBF International Rectifier Original PDF
    IRG4RC10KTR International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak package; A IRG4RC10K with Tape and Reel Packaging Original PDF
    IRG4RC10KTR International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak package Original PDF
    IRG4RC10KTRL International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak package; A IRG4RC10K with Tape and Reel Left Packaging Original PDF
    IRG4RC10KTRL International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak package Original PDF
    IRG4RC10KTRPBF International Rectifier Original PDF
    IRG4RC10KTRPBF International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak package; Similar to IRG4RC10KTR with Lead Free Packaging on Tape and Reel Original PDF

    IRG4R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-994

    Abstract: IRG4RC10S
    Text: PD - 91732A IRG4RC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    Original     		PDF 1732A IRG4RC10S O-252AA O-252AA AN-994 IRG4RC10S

    2A127

    Abstract: AN-994 IRG4RC10K
    Text: PD 91735A IRG4RC10K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency


    Original     		PDF 1735A IRG4RC10K O-252AA O-252AA 2A127 AN-994 IRG4RC10K

    IRG4RC10UD

    Abstract: No abstract text available
    Text: PD 91571A IRG4RC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 1571A IRG4RC10UD O-252AA 140ns IRG4RC10UD

    AN-994

    Abstract: EIA-541 IRG4RC10SD inverter circuit 200v to 100v
    Text: PD-91678B IRG4RC10SD Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF PD-91678B IRG4RC10SD O-252AA EIA-481 EIA-541. EIA-481. AN-994 EIA-541 IRG4RC10SD inverter circuit 200v to 100v

    Untitled

    Abstract: No abstract text available
    Text: PD 95389 IRG4RC10KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency


    Original     		PDF IRG4RC10KPbF O-252AA O-252AA O-252AA) EIA-481 EIA-541. EIA-481.

    AN-994

    Abstract: EIA-541 IRFR120 97003
    Text: PD - 95035 IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original     		PDF IRG4RC10KDPbF O-252AA cont16 EIA-481 EIA-541. EIA-481. AN-994 EIA-541 IRFR120 97003

    Untitled

    Abstract: No abstract text available
    Text: PD - 95192A IRG4RC10SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF 5192A IRG4RC10SDPbF O-252AA EIA-481 EIA-541. EIA-481.

    all transistor datasheet IRF 310

    Abstract: EIA 481 7105 EIA-541 IRG4RC10S
    Text: PD- 91732B IRG4RC10S www.irf.com 1 07/04/07 IRG4RC10S 1.8 2 www.irf.com IRG4RC10S www.irf.com 3 IRG4RC10S 4 www.irf.com IRG4RC10S www.irf.com 5 IRG4RC10S 6 www.irf.com IRG4RC10S www.irf.com 7 IRG4RC10S D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches)


    Original     		PDF 91732B IRG4RC10S O-252AA) all transistor datasheet IRF 310 EIA 481 7105 EIA-541 IRG4RC10S

    IRFR120

    Abstract: EIA-541
    Text: PD- 95766 IRG4RC10SPbF • Lead-Free www.irf.com 1 08/25/04 IRG4RC10SPbF 2 www.irf.com IRG4RC10SPbF www.irf.com 3 IRG4RC10SPbF 4 www.irf.com IRG4RC10SPbF www.irf.com 5 IRG4RC10SPbF 6 www.irf.com IRG4RC10SPbF www.irf.com 7 IRG4RC10SPbF D-Pak TO-252AA Package Outline


    Original     		PDF IRG4RC10SPbF O-252AA) IRFR120 EIA-541

    AN-994

    Abstract: IRG4RC20F
    Text: PD - 91731A IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1731A IRG4RC20F O-252AA O-252AA AN-994 IRG4RC20F

    AN-994

    Abstract: IRG4RC10U
    Text: PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1572A IRG4RC10U O-252AA O-252AA AN-994 IRG4RC10U

    Untitled

    Abstract: No abstract text available
    Text: PD- 95768 IRG4RC10UPbF • Lead-Free www.irf.com 1 08/25/04 IRG4RC10UPbF 2 www.irf.com IRG4RC10UPbF www.irf.com 3 IRG4RC10UPbF 4 www.irf.com IRG4RC10UPbF www.irf.com 5 IRG4RC10UPbF 6 www.irf.com IRG4RC10UPbF www.irf.com 7 IRG4RC10UPbF D-Pak TO-252AA Package Outline


    Original     		PDF IRG4RC10UPbF O-252AA) EIA-481

    IRG4RC10UD

    Abstract: No abstract text available
    Text: PD 9.1571 IRG4RC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4RC10UD O-252AA 140ns IRG4RC10UD

    AN-994

    Abstract: IRG4RC10SD
    Text: PD-91678 IRG4RC10SD PRELIMINARY Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF PD-91678 IRG4RC10SD O-252AA AN-994 IRG4RC10SD

    IRG4RC10KD

    Abstract: AN-994
    Text: PD -91736 IRG4RC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT C Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original     		PDF IRG4RC10KD O-252AA IRG4RC10KD AN-994

    Untitled

    Abstract: No abstract text available
    Text: PD- 95768 IRG4RC10UPbF • Lead-Free www.irf.com 1 08/25/04 IRG4RC10UPbF 2 www.irf.com IRG4RC10UPbF www.irf.com 3 IRG4RC10UPbF 4 www.irf.com IRG4RC10UPbF www.irf.com 5 IRG4RC10UPbF 6 www.irf.com IRG4RC10UPbF www.irf.com 7 IRG4RC10UPbF D-Pak TO-252AA Package Outline


    Original     		PDF IRG4RC10UPbF O-252AA)

    AN-994

    Abstract: IRG4RC10SD Transistor Mosfet N-CH 200V 40A
    Text: 2,'$%& IRG4RC10SD Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ) @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF IRG4RC10SD O-252AA AN-994 IRG4RC10SD Transistor Mosfet N-CH 200V 40A

    GE 443

    Abstract: IR igbt gate driver ic AN-994 IRG4RC20F
    Text: PD - 91731 IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4RC20F O-252AA O-252AA GE 443 IR igbt gate driver ic AN-994 IRG4RC20F

    Untitled

    Abstract: No abstract text available
    Text: IRG4RC10U Tape & Reel Information TO-252AA TR TRR 16 .3 .64 1 15 .7 ( .61 9 ) 1 2 .1 ( .4 76 ) 1 1 .9 ( .4 69 ) F E E D D IR E C TIO N TRL 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C TIO N N O T ES : 1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R .


    Original     		PDF IRG4RC10U O-252AA 73202L

    AN-994

    Abstract: IRG4RC10U m 60 n 03 g10
    Text: PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1572A IRG4RC10U O-252AA O-252AA Coll15 AN-994 IRG4RC10U m 60 n 03 g10

    AN-994

    Abstract: EIA-541 IRFR120
    Text: PD - 95035 IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original     		PDF IRG4RC10KDPbF O-252AA O-252AA) EIA-481 EIA-541. EIA-481. AN-994 EIA-541 IRFR120

    EIA-541

    Abstract: No abstract text available
    Text: PD- 95766A IRG4RC10SPbF • Lead-Free www.irf.com 1 06/14/07 IRG4RC10SPbF 1.8 2 www.irf.com IRG4RC10SPbF www.irf.com 3 IRG4RC10SPbF 4 www.irf.com IRG4RC10SPbF www.irf.com 5 IRG4RC10SPbF 6 www.irf.com IRG4RC10SPbF www.irf.com 7 IRG4RC10SPbF D-Pak TO-252AA Package Outline


    Original     		PDF 5766A IRG4RC10SPbF O-252AA) EIA-541

    Untitled

    Abstract: No abstract text available
    Text: PD -91736 International I R Rectifier IRG4RC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • S ho rt C ircuit Rated U ltraFast: O ptim ize d for high o p era ting fre q u e n cie s >5.0 kHz , and S hort


    OCR Scan     		PDF IRG4RC10KD -252A ratio233

    DIODE V97

    Abstract: No abstract text available
    Text: International IOR Rectifier PD 9.1571 IRG4RC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode .


    OCR Scan     		PDF IRG4RC10UD 140ns DIODE V97