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    IRG4BC30 Price and Stock

    Infineon Technologies AG IRG4BC30K

    IGBT 600V 28A 100W TO220AB
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    DigiKey IRG4BC30K Tube 50
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    Infineon Technologies AG IRG4BC30S

    IGBT 600V 34A 100W TO220AB
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    DigiKey IRG4BC30S Tube 300
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    Infineon Technologies AG IRG4BC30K-S

    IGBT 600V 28A 100W D2PAK
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    DigiKey IRG4BC30K-S Tube 250
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    Infineon Technologies AG IRG4BC30S-S

    IGBT 600V 34A 100W D2PAK
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    DigiKey IRG4BC30S-S Tube 250
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    Rochester Electronics LLC IRG4BC30UPBF

    IGBT
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    DigiKey IRG4BC30UPBF Bulk 217
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    IRG4BC30 Datasheets (110)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4BC30 International Rectifier Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V Original PDF
    IRG4BC30F International Rectifier Fast Speed IGBT Original PDF
    IRG4BC30F International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30F with Standard Packaging Original PDF
    IRG4BC30F International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC30FD International Rectifier 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; A IRG4BC30FD with Standard Packaging Original PDF
    IRG4BC30FD International Rectifier IRGP440UD2 Original PDF
    IRG4BC30FD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC30FD1 International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package>20kHz resonant mode; A IRG4BC30FD1 with Standard Packaging Original PDF
    IRG4BC30FD1 International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode Original PDF
    IRG4BC30FD1 International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode Original PDF
    IRG4BC30FD1PbF International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3TO-220AB Original PDF
    IRG4BC30FD1PBF International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package>20kHz resonant mode; Similar to IRG4BC30FD1 with Lead Free Packaging Original PDF
    IRG4BC30FDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3TO-220AB Original PDF
    IRG4BC30FDPBF International Rectifier 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC30FD with Lead Free Packaging Original PDF
    IRG4BC30FD-S International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3D2-PAK Original PDF
    IRG4BC30FD-S International Rectifier 600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; A IRG4BC30FD-S with Standard Packaging Original PDF
    IRG4BC30FD-SPbF International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3D2-PAK Original PDF
    IRG4BC30FD-SPBF International Rectifier 600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; Similar to IRG4BC30FD-S with Lead Free Packaging Original PDF
    IRG4BC30FD-STRR International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 31A 100W D2PAK Original PDF
    IRG4BC30FDSTRRP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 31A 100W D2PAK Original PDF

    IRG4BC30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E1789

    Abstract: No abstract text available
    Text: PD - 95173 IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30WPbF O-220AB E1789

    IRG4BC30UD

    Abstract: No abstract text available
    Text: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91453B IRG4BC30UD O-220AB o52-7105 IRG4BC30UD

    IRG4BC30FD

    Abstract: diode bridge LT 405
    Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91451B IRG4BC30FD O-220AB IRG4BC30FD diode bridge LT 405

    AN-994

    Abstract: No abstract text available
    Text: PD - 95693A IRG4BC30W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 5693A IRG4BC30W-SPbF 150W57) EIA-418. AN-994

    IRG4BC30U

    Abstract: No abstract text available
    Text: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91452E IRG4BC30U O-220AB O-220AB IRG4BC30U

    motor IG 2200 19 X 000 15 R

    Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91594C IRG4BC30KD-S motor IG 2200 19 X 000 15 R AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S

    Untitled

    Abstract: No abstract text available
    Text: PD -95651A IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF -95651A IRG4BC30FPbF O-220AB O-220AB

    transistor A6t 75

    Abstract: A6T TRANSISTOR
    Text: PD - 95692A IRG4BC30U-SPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5692A IRG4BC30U-SPbF VC957) EIA-418. transistor A6t 75 A6T TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30W-S topol22

    AN-994

    Abstract: IRGBC30K-S IRGBC30M-S
    Text: PD - 95785 IRG4BC30K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4BC30K-SPbF AN-994. AN-994 IRGBC30K-S IRGBC30M-S

    IRGBC30K

    Abstract: IRGBC30M marking code TR
    Text: PD - 95641 IRG4BC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4BC30KPbF O-220AB IRGBC30K IRGBC30M marking code TR

    IRGBC30MD2

    Abstract: IRGBC30KD2 IRG4BC30KDPbF
    Text: PD -94910 IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4BC30KDPbF O-220AB. O-220AB IRGBC30MD2 IRGBC30KD2 IRG4BC30KDPbF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95786 IRG4BC30S-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency


    Original     		PDF IRG4BC30S-SPbF EIA-418.

    IRF1010

    Abstract: No abstract text available
    Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF PD-94810 IRG4BC30UDPbF O-220AB O-220AB. IRF1010 IRF1010

    IRF1010

    Abstract: No abstract text available
    Text: PD - 95170 IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30SPbF O-220AB O-220AB IRF1010 IRF1010

    Untitled

    Abstract: No abstract text available
    Text: PD - 95169 IRG4BC30UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30UPbF O-220AB O-220AB -220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5970A IRG4BC30FD-SPbF 20kHz EIA-418.

    AN-994

    Abstract: IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -95674 IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching


    Original     		PDF IRG4BC30KD-SPbF EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S

    AN-994

    Abstract: IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -95674A IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching


    Original     		PDF -95674A IRG4BC30KD-SPbF Minimized57) EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S

    AN-994

    Abstract: IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S LT 236 diode
    Text: PD -91594B PRELIMINARY IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V


    Original     		PDF -91594B IRG4BC30KD-S AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S LT 236 diode

    1453a

    Abstract: IRG4BC30UD ITT 451 DIODE
    Text: PD 9.1453A IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30UD O-220AB 1453a IRG4BC30UD ITT 451 DIODE

    Untitled

    Abstract: No abstract text available
    Text: International Iö R Rectifier PD 9.1451A IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .


    OCR Scan     		PDF IRG4BC30FD O-220AB conT0-220AB

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier pd-9.h52d IRG4BC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC30U

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1453A International IO R Rectifier IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan     		PDF IRG4BC30UD T0-220AB