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    IRFU21 Search Results

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    IRFU21 Price and Stock

    Vishay Siliconix IRFU210PBF

    MOSFET N-CH 200V 2.6A TO251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFU210PBF Tube 11,306 1
    • 1 $1.54
    • 10 $1.54
    • 100 $0.69427
    • 1000 $0.52269
    • 10000 $0.5
    Buy Now
    New Advantage Corporation IRFU210PBF 750 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.2933
    • 10000 $0.2933
    Buy Now

    Vishay Siliconix IRFU214PBF

    MOSFET N-CH 250V 2.2A TO251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFU214PBF Tube 2,855 1
    • 1 $1.93
    • 10 $1.93
    • 100 $0.86787
    • 1000 $0.65337
    • 10000 $0.55512
    Buy Now
    Bristol Electronics IRFU214PBF 750
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    Quest Components IRFU214PBF 600
    • 1 $2.432
    • 10 $2.432
    • 100 $2.432
    • 1000 $1.0032
    • 10000 $1.0032
    Buy Now

    Vishay Siliconix IRFU210

    MOSFET N-CH 200V 2.6A TO251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFU210 Tube 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.1875
    Buy Now

    Vishay Siliconix IRFU214

    MOSFET N-CH 250V 2.2A TO251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFU214 Tube 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.1875
    Buy Now

    onsemi IRFU214BTU_FP001

    MOSFET N-CH 250V 2.2A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFU214BTU_FP001 Tube
    • 1 -
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    • 100 -
    • 1000 -
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    IRFU21 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFU210 International Rectifier Power MOSFET Original PDF
    IRFU210 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFU210 Vishay Semiconductors MOSFET N-CH 200V 2.6A I-PAK Original PDF
    IRFU210 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 2.6A I-PAK Original PDF
    IRFU210 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFETs Scan PDF
    IRFU210 International Rectifier N-Channel HEXFET Transistors, 200 Volt, 1.5 Ohm Scan PDF
    IRFU210 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFU210 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFU210 International Rectifier HEXFET Power Mosfet Scan PDF
    IRFU210 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFU210 Unknown FET Data Book Scan PDF
    IRFU210 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFU210 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFU210 Samsung Electronics N-Channel Power MOSFET Scan PDF
    IRFU210A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFU210A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFU210A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFU210B Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFU210B Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFU210B Fairchild Semiconductor 200V N-Channel MOSFET Original PDF

    IRFU21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA-541

    Abstract: IRFR120 IRFU120 U120 rectifier diode assembly irf p channel
    Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free Document Number: 91268 12/9/04 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF


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    PDF 5068A IRFR210PbF IRFU210PbF IRFR/U210PbF 12-Mar-07 EIA-541 IRFR120 IRFU120 U120 rectifier diode assembly irf p channel

    IRFU210

    Abstract: IRFR210 SiHFR210 SiHFR210-E3 SiHFU210
    Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8


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    PDF IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252) IRFU210 IRFR210 SiHFR210-E3

    IRFR214B

    Abstract: IRFU214B
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


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    PDF IRFR214B IRFU214B IRFU214B

    irfu9210

    Abstract: irfu214 IRFR214 SiHFR214 SiHFR214-E3 SiHFU214
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


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    PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 18-Jul-08 irfu9210 irfu214 IRFR214 SiHFR214-E3

    Device Code SE

    Abstract: EIA-541 IRFR120 IRFU120 U120 IRF p-CHANNEL
    Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U210PbF 2 www.irf.com IRFR/U210PbF www.irf.com 3 IRFR/U210PbF 4 www.irf.com IRFR/U210PbF www.irf.com 5 IRFR/U210PbF 6 www.irf.com IRFR/U210PbF Peak Diode Recovery dv/dt Test Circuit


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    PDF 5068A IRFR210PbF IRFU210PbF IRFR/U210PbF Wavefor10PbF Device Code SE EIA-541 IRFR120 IRFU120 U120 IRF p-CHANNEL

    irfu9210

    Abstract: IRFR214 IRFU214 SiHFR214 SiHFR214-E3
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


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    PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 18-Jul-08 irfu9210 IRFR214 IRFU214 SiHFR214-E3

    irfr214

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


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    PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 12-Mar-07 irfr214

    Untitled

    Abstract: No abstract text available
    Text: PD- 95384 IRFR214PbF IRFU214PbF • Lead-Free www.irf.com 1 06/07/04 IRFR/U214PbF 2 www.irf.com IRFR/U214PbF www.irf.com 3 IRFR/U214PbF 4 www.irf.com IRFR/U214PbF www.irf.com 5 IRFR/U214PbF 6 www.irf.com IRFR/U214PbF www.irf.com 7 IRFR/U214PbF D-Pak TO-252AA Package Outline


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    PDF IRFR214PbF IRFU214PbF IRFR/U214PbF O-252AA)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


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    PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


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    PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


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    PDF IRFR214B IRFU214B

    Untitled

    Abstract: No abstract text available
    Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)


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    PDF IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252)

    IRFR210

    Abstract: IRFU210 SiHFR210 SiHFR210-E3 SiHFU210
    Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8


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    PDF IRFR210, IRFU210, SiHFR210 SiHFU210 IRFR210/SiHFR210) IRFU210/SiHFU210) O-252) O-251) 18-Jul-08 IRFR210 IRFU210 SiHFR210-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating


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    PDF IRFR210, IRFU210, SiHFR210 SiHFU210 O-252) O-251)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


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    PDF IRFR214B IRFU214B O-251 IRFU214B IRFU214BTU FP001

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


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    PDF IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251)

    Untitled

    Abstract: No abstract text available
    Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free Document Number: 91268 12/9/04 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF


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    PDF 5068A IRFR210PbF IRFU210PbF IRFR/U210PbF 08-Mar-07

    IRFU210A

    Abstract: No abstract text available
    Text: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


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    PDF IRFR210B IRFU210B IRFU210B O-251 IRFU210BTLTU FP001 IRFU210A

    irfu214

    Abstract: IRFR214 TB334
    Text: IRFR214, IRFU214 Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are


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    PDF IRFR214, IRFU214 TA17443. irfu214 IRFR214 TB334

    AN-994

    Abstract: IRFR210 IRFU210
    Text: PD-9.526C International S Rectifier IRFR210 IRFU210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling


    OCR Scan
    PDF IRFR210 IRFR210) IRFU210) AN-994 IRFR210 IRFU210

    1RFR214

    Abstract: 25C2 AN-994 IRFR214 IRFU214
    Text: International S Rectifier PD-9.703A IRFR214 IRFU214 HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching Ease of Paralleling V dss - 250V R DS(on) - 2 0 ß


    OCR Scan
    PDF IRFR214 IRFR214) IRFU214) i50Kn lntGIT13tà 1RFR214 25C2 AN-994 IRFR214 IRFU214

    u210

    Abstract: xrd6 irfr210 N-Channel Power MOSFETs IRFR211
    Text: IRFR210/211 IRFU210/211 N-CHANNEL POWER MOSFETS FEATURES D -P A K • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    PDF IRFR210/211 IRFU210/211 IRFR210/U210 IRFR211/U211 7clb414E 00Eflb3Q u210 xrd6 irfr210 N-Channel Power MOSFETs IRFR211

    IRFR210

    Abstract: IRFR212 IRFU210 IRFU212 UJ31 irfh212 k 3525 MOSFET
    Text: h e D I MASS4S3 aaafie^s i I • INTERNATIONAL RECTIFIER ■ Data Sheet No. PD-9.526A T-35-25 INTERNATIONAL RECTIFIER IIO R I AVALANCHE AND dv/dt RATED IRFRSIO IRFR21S IRFU210 IRFUSiS HEXFET TRANSISTORS :H N -C H A N N E L Product Summary 200 Volt, 1.5 Ohm HEXFET


    OCR Scan
    PDF t-35-25 IRFU210 IRFR210, IRFR212, IRFU210, IRFU212 IRFR210TR IRFR210 IRFR212 IRFU210 UJ31 irfh212 k 3525 MOSFET

    TO-251AA

    Abstract: ipak
    Text: International H EXFET Power MOSFETs H^IRectìfier I-Pak I-Pak TO-251A A N-Channel Part Number IRFU014 IRFU024 IRFU110 IRFU120 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 IRFU320 IRFU420 IRFUC20 V(BR)DSS Drain-to-Source R DS(on) I q Continuous Breakdown On-State Drain Current


    OCR Scan
    PDF O-251A IRFU014 IRFU024 IRFU110 IRFU120 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 TO-251AA ipak