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Vishay Siliconix IRFR210PBF MOSFET N-CH 200V 2.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR210PBF	Tube	13,314		1	1 $1.37 10 $1.37 100 $0.60987 1000 $0.45617 10000 $0.42363	Buy Now
Vishay Siliconix IRFR210TRPBF MOSFET N-CH 200V 2.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR210TRPBF	Digi-Reel	7,933		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR210TRPBF	Reel	6,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.42363	Buy Now
RS	IRFR210TRPBF	Bulk			10	1 - 10 $0.76 100 $0.73 1000 $0.65 10000 $0.65	Get Quote
New Advantage Corporation	IRFR210TRPBF		4,000		1	1 - 10 - 100 - 1000 - 10000 $0.48	Buy Now
Vishay Siliconix IRFR210TRPBF-BE3 MOSFET N-CH 200V 2.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR210TRPBF-BE3	Digi-Reel	7,885		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR210TRPBF-BE3	Cut Tape	7,885		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR210TRPBF-BE3	Reel	6,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.42363	Buy Now
Vishay Siliconix IRFR210TRLPBF MOSFET N-CH 200V 2.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR210TRLPBF	Cut Tape	4,671		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR210TRLPBF	Digi-Reel	4,671		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR210TRLPBF	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.46169	Buy Now
Vishay Siliconix IRFR210PBF-BE3 MOSFET N-CH 200V 2.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR210PBF-BE3	Tube	2,984		1	1 $1.71 10 $1.71 100 $0.76227 1000 $0.57023 10000 $0.43765	Buy Now

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IRFR21 Datasheets (88)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFR210	International Rectifier	Power MOSFET	Original	PDF
IRFR210	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFR210	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 2.6A DPAK	Original	PDF
IRFR210	International Rectifier	N-Channel HEXFET Transistors, 200 Volt, 1.5 Ohm	Scan	PDF
IRFR210	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRFR210	International Rectifier	HEXFET Power MOSFETs	Scan	PDF
IRFR210	International Rectifier	Surface Mount HEXFETs	Scan	PDF
IRFR210	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFR210	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 2.6A, Pkg Style TO-252AA	Scan	PDF
IRFR210	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFR210	Unknown	FET Data Book	Scan	PDF
IRFR210	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFR210	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFR210	Samsung Electronics	N-Channel Power MOSFET	Scan	PDF

IRFR210	Samsung Electronics	N-Channel Power MOSFETS	Scan	PDF
IRFR210A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRFR210A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFR210A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRFR210B	Fairchild Semiconductor	200V N-Channel MOSFET	Original	PDF
IRFR210B	Fairchild Semiconductor	200 V N-Channel MOSFET	Original	PDF

IRFR21 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
EIA-541 Abstract: IRFR120 IRFU120 U120 rectifier diode assembly irf p channel Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free Document Number: 91268 12/9/04 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF	Original	PDF	5068A IRFR210PbF IRFU210PbF IRFR/U210PbF 12-Mar-07 EIA-541 IRFR120 IRFU120 U120 rectifier diode assembly irf p channel
IRFU210 Abstract: IRFR210 SiHFR210 SiHFR210-E3 SiHFU210 Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252) IRFU210 IRFR210 SiHFR210-E3
IRFR214B Abstract: IRFU214B Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR214B IRFU214B IRFU214B
irfu9210 Abstract: irfu214 IRFR214 SiHFR214 SiHFR214-E3 SiHFU214 Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)	Original	PDF	IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 18-Jul-08 irfu9210 irfu214 IRFR214 SiHFR214-E3
Device Code SE Abstract: EIA-541 IRFR120 IRFU120 U120 IRF p-CHANNEL Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U210PbF 2 www.irf.com IRFR/U210PbF www.irf.com 3 IRFR/U210PbF 4 www.irf.com IRFR/U210PbF www.irf.com 5 IRFR/U210PbF 6 www.irf.com IRFR/U210PbF Peak Diode Recovery dv/dt Test Circuit	Original	PDF	5068A IRFR210PbF IRFU210PbF IRFR/U210PbF Wavefor10PbF Device Code SE EIA-541 IRFR120 IRFU120 U120 IRF p-CHANNEL
irfu9210 Abstract: IRFR214 IRFU214 SiHFR214 SiHFR214-E3 Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)	Original	PDF	IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 18-Jul-08 irfu9210 IRFR214 IRFU214 SiHFR214-E3
irfr214 Abstract: No abstract text available Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)	Original	PDF	IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 12-Mar-07 irfr214
Untitled Abstract: No abstract text available Text: PD- 95384 IRFR214PbF IRFU214PbF Lead-Free www.irf.com 1 06/07/04 IRFR/U214PbF 2 www.irf.com IRFR/U214PbF www.irf.com 3 IRFR/U214PbF 4 www.irf.com IRFR/U214PbF www.irf.com 5 IRFR/U214PbF 6 www.irf.com IRFR/U214PbF www.irf.com 7 IRFR/U214PbF D-Pak TO-252AA Package Outline	Original	PDF	IRFR214PbF IRFU214PbF IRFR/U214PbF O-252AA)
Untitled Abstract: No abstract text available Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21	Original	PDF	IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)
Untitled Abstract: No abstract text available Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21	Original	PDF	IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)
Untitled Abstract: No abstract text available Text: IRFR214 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V) I(D) Max. (A)2.2 I(DM) Max. (A) Pulsed I(D)1.4 @Temp (øC)100# IDM Max (@25øC Amb)8.8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-55õ	Original	PDF	IRFR214
Untitled Abstract: No abstract text available Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR214B IRFU214B
Untitled Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252)
IRFR210 Abstract: IRFU210 SiHFR210 SiHFR210-E3 SiHFU210 Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 IRFR210/SiHFR210) IRFU210/SiHFU210) O-252) O-251) 18-Jul-08 IRFR210 IRFU210 SiHFR210-E3

Untitled Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRFR214 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V	Original	PDF	IRFR214
IRFR210B Abstract: IRFU210B Text: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR210B IRFU210B IRFU210B
Untitled Abstract: No abstract text available Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR214B IRFU214B O-251 IRFU214B IRFU214BTU FP001
Untitled Abstract: No abstract text available Text: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)	Original	PDF	IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251)
Untitled Abstract: No abstract text available Text: IRFR214 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 250 V 2.0Q ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 2.2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10\|^A(Max.) @ V DS = 250V	OCR Scan	PDF	IRFR214
AN-994 Abstract: IRFR210 IRFU210 Text: PD-9.526C International S Rectifier IRFR210 IRFU210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling	OCR Scan	PDF	IRFR210 IRFR210) IRFU210) AN-994 IRFR210 IRFU210
irfb220 Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251 Text: - 1 f « ± £ £ Ta=25tC SI € tt € Id Pd r Vds Vgs or /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111	OCR Scan	PDF	1HFPG50 O-247AC T0-247AC O-251AA IRFR9222 O-243AA IRFU010 irfb220 TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
1RFR214 Abstract: 25C2 AN-994 IRFR214 IRFU214 Text: International S Rectifier PD-9.703A IRFR214 IRFU214 HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching Ease of Paralleling V dss - 250V R DS(on) - 2 0 ß	OCR Scan	PDF	IRFR214 IRFR214) IRFU214) i50Kn lntGIT13tÃ 1RFR214 25C2 AN-994 IRFR214 IRFU214
u210 Abstract: xrd6 irfr210 N-Channel Power MOSFETs IRFR211 Text: IRFR210/211 IRFU210/211 N-CHANNEL POWER MOSFETS FEATURES D -P A K • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	PDF	IRFR210/211 IRFU210/211 IRFR210/U210 IRFR211/U211 7clb414E 00Eflb3Q u210 xrd6 irfr210 N-Channel Power MOSFETs IRFR211
IRFR210 Abstract: IRFR212 IRFU210 IRFU212 UJ31 irfh212 k 3525 MOSFET Text: h e D I MASS4S3 aaafie^s i I • INTERNATIONAL RECTIFIER ■ Data Sheet No. PD-9.526A T-35-25 INTERNATIONAL RECTIFIER IIO R I AVALANCHE AND dv/dt RATED IRFRSIO IRFR21S IRFU210 IRFUSiS HEXFET TRANSISTORS :H N -C H A N N E L Product Summary 200 Volt, 1.5 Ohm HEXFET	OCR Scan	PDF	t-35-25 IRFU210 IRFR210, IRFR212, IRFU210, IRFU212 IRFR210TR IRFR210 IRFR212 IRFU210 UJ31 irfh212 k 3525 MOSFET

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Vishay Siliconix IRFR210PBF

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IRFR21 Datasheets (88)

IRFR21 Datasheets Context Search

EIA-541

IRFU210

IRFR214B

irfu9210

Device Code SE

irfu9210

irfr214

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IRFR210

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IRFR210B

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AN-994

irfb220

1RFR214

u210

IRFR210