MOSFET IRF 380
Abstract: No abstract text available
Text: PD - 95020 IRFR/U9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω
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IRFR/U9120NPbF
IRFR9120N)
IRFU9120N)
-100V
O-252AA)
EIA-481
EIA-541.
EIA-481.
MOSFET IRF 380
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IRFU9120N
Abstract: IRFR9120N
Text: PD - 9.1507A PRELIMINARY IRFR/U9120N HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.48Ω
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IRFR/U9120N
IRFR9120N)
IRFU9120N)
-100V
IRFU9120N
IRFR9120N
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U9024N
Abstract: IRFU9024N IRF9Z24N IRFR9024N
Text: PD - 9.1506 PRELIMINARY IRFR/U9024N HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.175Ω
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IRFR/U9024N
IRFR9024N)
IRFU9024N)
U9024N
IRFU9024N
IRF9Z24N
IRFR9024N
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IRFR5410
Abstract: IRFU5410 100v P-Channel DPAK U5410
Text: PD - 9.1533A IRFR/U5410 l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description
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IRFR/U5410
IRFR5410)
IRFU5410)
-100V
IRFR5410
IRFU5410
100v P-Channel DPAK
U5410
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IRFR P-Channel MOSFET
Abstract: IRFR5410 IRFU5410 pcb layout for TO 252AA
Text: PD - 9.1533A IRFR/U5410 l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description
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IRFR/U5410
IRFR5410)
IRFU5410)
-100V
IRFR P-Channel MOSFET
IRFR5410
IRFU5410
pcb layout for TO 252AA
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IRFR6215
Abstract: IRFU6215
Text: PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = -150V RDS(on) = 0.295Ω
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IRFR/U6215
IRFR6215)
IRFU6215)
-150V
IRFR6215
IRFU6215
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irf*24n
Abstract: U9024N IRF9Z24N IRFU9024N IRFR9024N 20V P-Channel Power MOSFET 100A
Text: PD - 9.1506 PRELIMINARY IRFR/U9024N HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.175Ω
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IRFR/U9024N
IRFR9024N)
IRFU9024N)
irf*24n
U9024N
IRF9Z24N
IRFU9024N
IRFR9024N
20V P-Channel Power MOSFET 100A
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IRFR9120N
Abstract: IRFU9120N 14.5M 1982 U912
Text: PD - 9.1507A PRELIMINARY IRFR/U9120N HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.48Ω
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IRFR/U9120N
IRFR9120N)
IRFU9120N)
-100V
IRFR9120N
IRFU9120N
14.5M 1982
U912
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Untitled
Abstract: No abstract text available
Text: PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = -150V RDS(on) = 0.295Ω
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IRFR/U6215
IRFR6215)
IRFU6215)
-150V
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Untitled
Abstract: No abstract text available
Text: PD - 95375 PRELIMINARY IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A
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IRFR9214)
IRFU9214)
IRFR/U9214PbF
-250V
O-252AA)
EIA-481
EIA-541.
EIA-481.
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el 1533
Abstract: IRFR5410 IRFU5410
Text: PD - 9.1533 IRFR/U5410 PRELIMINARY HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.205Ω G
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IRFR/U5410
IRFR5410)
IRFU5410)
-100V
el 1533
IRFR5410
IRFU5410
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IRF 870
Abstract: HEXFET Power MOSFET P-Channel IRFR9214 IRFU9214 IRF MOSFET 260
Text: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S
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5375A
IRFR/U9214PbF
IRFR9214)
IRFU9214)
-250V
12-Mar-07
IRF 870
HEXFET Power MOSFET P-Channel
IRFR9214
IRFU9214
IRF MOSFET 260
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IRFR6215
Abstract: IRFU6215
Text: PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = -150V RDS(on) = 0.295Ω
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IRFR/U6215
IRFR6215)
IRFU6215)
-150V
IRFR6215
IRFU6215
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IRF 870
Abstract: mosfet IRF 870 IRFR9214 IRFU9214
Text: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S
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5375A
IRFR/U9214PbF
IRFR9214)
IRFU9214)
-250V
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRF 870
mosfet IRF 870
IRFR9214
IRFU9214
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Untitled
Abstract: No abstract text available
Text: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9214 Straight Lead (IRFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -250V RDS(on) = 3.0Ω G ID = -2.7A S Description Third Generation HEXFETs from International Rectifier
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IRFR/U9214
IRFR9214)
IRFU9214)
-250V
08-Mar-07
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IRFU
Abstract: IRFU 310
Text: P D - 9 1610A International IO R Rectifier IRFR/U5505 PRELIM INARY HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR 5505 Straight Lead (IRFU 5505) Advanced Process Technology Fast Switching Fully Avalanche Rated V d s s = -5 5 V
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IRFR/U5505
EIA-481
IRFU
IRFU 310
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FR9214
Abstract: No abstract text available
Text: International IO R Rectifier P D - 9.1658 IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IR F R 9214 StraightLead (IRFU9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R ü S (o n ) = 3 . 0 C Ì b = -2.8A
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IRFU9214N
IRFR/U9214
-250V
EIA-481.
FR9214
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U5410
Abstract: No abstract text available
Text: PD - 9.1533 International IQR Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5410 • Straight Lead (IRFU5410) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated
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OCR Scan
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PDF
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IRFR5410)
IRFU5410)
IRFR/U5410
-100V
U5410
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Untitled
Abstract: No abstract text available
Text: P D - 9 .1 6 1 0 A International IO R Rectifier IRFR/U5505 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5505 • Straight Lead (IRFU5505) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated
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IRFR/U5505
IRFR5505)
IRFU5505)
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Untitled
Abstract: No abstract text available
Text: PD - 9.1507A International IQ R Rectifier PRELIMINARY IRFR/U9120N HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR9120N • Straight Lead (IRFU9120N) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated
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IRFR9120N)
IRFU9120N)
IRFR/U9120N
-100V
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Untitled
Abstract: No abstract text available
Text: PD - 91749 International IQ R Rectifier IRFR/U6215 PRELIMINARY HEXFET Power MOSFET • P-Channel • 175°C Operating Temperature • Surface Mount IRFR6215 • Straight Lead (IRFU6215) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated
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OCR Scan
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PDF
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IRFR6215)
IRFU6215)
IRFR/U6215
-150V
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Untitled
Abstract: No abstract text available
Text: P D -9 .1 5 3 3 International IQ R Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET Ultra Low O n-Resistance P-Channel Surface M ount IR FR 5410 Straight Lead (IR FU 5410) A dvanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -1 0 0 V
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IRFR/U5410
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ior 481 mosfet
Abstract: IRFR9214 IRFU9214N IOR 235
Text: 4 PD - 9.1658 International IO R Rectifier IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 Straight Lead (IRFU9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R D S (on) = 3 0 Q Id = -2.8A
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IRFR/U9214
IRFR9214)
IRFU9214N
M655M52
ior 481 mosfet
IRFR9214
IOR 235
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c416 diode
Abstract: C417 IRFU9024N c418
Text: International IGR Rectifier PD-9.1506A IRFR/U9024N HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR9024N • Straight Lead (IRFU9024N) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated V dss = -55V
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IRFR9024N)
IRFU9024N)
IRFR/U9024N
C-418
C-419
c416 diode
C417
IRFU9024N
c418
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