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Infineon Technologies AG IRFHM830TR2PBF MOSFET N-CH 30V 21A/40A PQFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFHM830TR2PBF	Cut Tape			1	1 $1.68 10 $1.68 100 $1.68 1000 $1.68 10000 $1.68	Buy Now
	IRFHM830TR2PBF	Digi-Reel			1	1 $1.68 10 $1.68 100 $1.68 1000 $1.68 10000 $1.68	Buy Now
International Rectifier IRFHM830TR2PBF HEXFET POWER MOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	IRFHM830TR2PBF		1,600			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRFHM830TR2PBF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFHM830TR2PBF		International Rectifier	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 21A PQFN		Original	PDF

IRFHM830TR2PBF Datasheets Context Search

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Untitled Abstract: No abstract text available Text: IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID nC Ω 40h (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET	Original	PDF	IRFHM830PbF IRFHM830TRPBF IRFHM830TR2PBF
Untitled Abstract: No abstract text available Text: PD - 97547A IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID D 5 4 G D 6 3 S nC D 7 2 S Ω D 8 1 S 3.3mm x 3.3mm PQFN 40h (@Tc(Bottom) = 25°C) A Applications • Battery Operated DC Motor Inverter MOSFET	Original	PDF	7547A IRFHM830PbF IRFHM830TRPBF IRFHM830TR2PBF
IRFHM830PbF Abstract: IRFHM830TR2PBF IRFHM830 AN-1154 J-STD-020D 13002A SPN 0215 IRFHM830TR IRFHM830P Text: PD - 97547A IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID nC Ω 40h (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET	Original	PDF	7547A IRFHM830PbF IRFHM830TRPBF IRFHM830TR2PBF IRFHM830PbF IRFHM830TR2PBF IRFHM830 AN-1154 J-STD-020D 13002A SPN 0215 IRFHM830TR IRFHM830P
Untitled Abstract: No abstract text available Text: IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 3.8 mΩ 15 2.5 nC Ω 40h (@Tc(Bottom) = 25°C) 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Low RDSon (<3.8mΩ)	Original	PDF	IRFHM830PbF IRFHM830TRPBF IRFHM830TR2PBF