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Abstract: No abstract text available
Text: IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID nC Ω 40h (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET
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IRFHM830PbF
IRFHM830TRPBF
IRFHM830TR2PBF
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Untitled
Abstract: No abstract text available
Text: PD - 97547A IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID D 5 4 G D 6 3 S nC D 7 2 S Ω D 8 1 S 3.3mm x 3.3mm PQFN 40h (@Tc(Bottom) = 25°C) A Applications • Battery Operated DC Motor Inverter MOSFET
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7547A
IRFHM830PbF
IRFHM830TRPBF
IRFHM830TR2PBF
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IRFHM830PbF
Abstract: IRFHM830TR2PBF IRFHM830 AN-1154 J-STD-020D 13002A SPN 0215 IRFHM830TR IRFHM830P
Text: PD - 97547A IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID nC Ω 40h (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET
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Original
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PDF
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7547A
IRFHM830PbF
IRFHM830TRPBF
IRFHM830TR2PBF
IRFHM830PbF
IRFHM830TR2PBF
IRFHM830
AN-1154
J-STD-020D
13002A
SPN 0215
IRFHM830TR
IRFHM830P
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Untitled
Abstract: No abstract text available
Text: IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 3.8 mΩ 15 2.5 nC Ω 40h (@Tc(Bottom) = 25°C) 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Low RDSon (<3.8mΩ)
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Original
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PDF
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IRFHM830PbF
IRFHM830TRPBF
IRFHM830TR2PBF
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