IRFHM830DTR2PBF
Abstract: IRFHM830DTRPBF AN-1154 J-STD-020D IRFHM830
Text: PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 4.3 mΩ 13 1.1 nC 40 (@Tc(Bottom) = 25°C) D 5 D Ω h 6 4 G 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters
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PDF
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-96327A
IRFHM830DPbF
409mH,
IRFHM830DTR2PBF
IRFHM830DTRPBF
AN-1154
J-STD-020D
IRFHM830
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Untitled
Abstract: No abstract text available
Text: IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 4.3 mΩ 13 1.1 nC 40 (@Tc(Bottom) = 25°C) D 5 D Ω h 4 G 6 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters Features and Benefits
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Original
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PDF
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IRFHM830DPbF
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Untitled
Abstract: No abstract text available
Text: PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 30 V 4.3 mΩ 13 1.1 nC D 5 D Qg (typical) RG (typical) ID 40 (@Tc(Bottom) = 25°C) Ω h 6 4 G 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters
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Original
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PDF
|
-96327A
IRFHM830DPbF
409mH,
|
Untitled
Abstract: No abstract text available
Text: IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 4.3 mΩ 13 1.1 nC 40 (@Tc(Bottom) = 25°C) Ω h A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Low RDSon (≤ 4.3mΩ)
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Original
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PDF
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IRFHM830DPbF
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