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    IRFF123 Search Results

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    IRFF123 Price and Stock

    New Jersey Semiconductor Products, Inc. IRFF123

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF123 4,733 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
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    HARTING Technology Group IRFF123

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF123 1,000
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    Vishay Siliconix IRFF123

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    Bristol Electronics IRFF123 5
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    Quest Components IRFF123 4
    • 1 $20.873
    • 10 $20.873
    • 100 $20.873
    • 1000 $20.873
    • 10000 $20.873
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    International Rectifier IRFF123

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF123 4
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    Quest Components IRFF123 46
    • 1 $16
    • 10 $12
    • 100 $10.4
    • 1000 $10.4
    • 10000 $10.4
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    New Jersey Semiconductor Products Inc IRFF123

    POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 60V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF123 3,786
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $16
    • 10000 $16
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    IRFF123 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF123 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF123 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. Scan PDF
    IRFF123 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF123 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF123 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF123 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF123 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF123 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF123 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF123 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF123 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF123 Unknown FET Data Book Scan PDF
    IRFF123 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    IRFF123 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF123R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF123R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF123R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFF120, IRFF121, IRFF122, IRFF123 S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    PDF IRFF120, IRFF121, IRFF122, IRFF123 TA09594.

    Untitled

    Abstract: No abstract text available
    Text: IRFF120, IRFF121, IRFF122, IRFF123 HARRIS S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate


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    PDF IRFF120, IRFF121, IRFF122, IRFF123 TA09594. RFF122, IRFF123

    IRFF121

    Abstract: IRFF120 IRFF122 IRFF123
    Text: D E | 3Ö7SDÖ1 0D1ASS4 7 f □ 1 3875081 6 E SOLID STATE 0 1E 18254 D T-ïf-O l - Standard Power M OSFETs IRFF120, IRFF121, IRFF122, IRFF123 File Number 1563 Power MOS Field-Effect Transistors N -CH A N N EL E N H A N C EM EN T M ODE N-Channel Enhancement-Mode


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    PDF 001fl5S4 IRFF120, IRFF121, IRFF122, IRFF123 0V-100V IRFF122 IRFF123 IRFF121 IRFF120

    OA 161 diode

    Abstract: IRFF120 IRFF121 IRFF122 IRFF123 3ws7
    Text: Standard Power MOSFETs IRFF120, IRFF121, IRFF122, IRFF123 File N u m b e r 1563 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 5.0A and 6.0A, 60V-100V rDs on = 0.30 Q and 0.40 O Features:


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    PDF IRFF120, IRFF121, IRFF122, IRFF123 0V-100V IRFF122 IRFF123 OA 161 diode IRFF120 IRFF121 3ws7

    I22R

    Abstract: IRFF122R IRFF120R IRFF121R IRFF123R IRFFI22R
    Text: Rugged Power MOSFETs_ IRFF120R, IRFF121R, IRFFI22R, IRFF123R File Num ber 2023 Avalanche Energy Rated N-Channel Power MOSFETs 5.0A and 6.0A, 60V-100V ib s o n = 0.300 and 0.400 N-CHANNEL ENH ANCEM ENT M ODE Feature«: • Single pulse avalanche energy rated


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    PDF IRFF120R, IRFF121R, IRFF123R 0V-100V IRFF122R IRFF123R 92CS-42S60 I22R IRFF120R IRFF121R IRFFI22R

    1RFF120

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRFF120 IRFF123 Advance Information S m all-S ig nal Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S N-CHANNEL TMOS POWER FETs rDS on = 0-3 OHM 100 VOLTS rDS(on) = 0.4 OHM 60 VOLTS . . . desig n ed fo r lo w vo ltag e , high speed p o w e r sw itch in g


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    PDF IRFF120 IRFF123 IRFF123 1RFF120

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
    Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR


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    PDF 1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25

    Untitled

    Abstract: No abstract text available
    Text: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current


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    PDF IRFF014 IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 2N6782

    N06A

    Abstract: IRFF123 ANA1-20 OV60 MH110
    Text: 8368602 * S OLITRON D EV ICES olltron D E V I C E S , IN g bl f i B b A bO a □ 0 0 D H ,:i2 ô JV T-39-09 _ SFM Ü I N C . POWER IVSOS DEVICE 60V/5A N Channel, TO-39 Package, IRFF123 Equivalent The new Solitron Power MOS technology combines îhe efficient


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    PDF t-39-09 IRFF123 HP214A F/450V N06A ANA1-20 OV60 MH110

    Untitled

    Abstract: No abstract text available
    Text: i H A R R IRFF120, IRFF121, IRFF122, IRFF123 i s s e - c o . o u c t o r 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRFF120, IRFF121, IRFF122, IRFF123 gat16 IRFF120 1RFF121, RFF122, RFF123

    G331

    Abstract: pj 86 diode irff120 g-331 G 331 G333
    Text: 11Ê D I MÖ55MS2 GGÜIBSH b | Data Sheet No. PD-9.342F INTERNATIONAL RECTIFIER I«R INTERNATIONAL RECTIFIER HEXFETTRANSISTORSIRFF120 IRFF12*! IM-CHANNEL POWER MOSFETs TO-39 PACKAGE IRFF1SS 4 1 IRFF123 Features: 100 Volt, 0.30 Ohm HEXFET T h e H E X F E T ® technology is the key to International


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    PDF 55MS2 G-334 G331 pj 86 diode irff120 g-331 G 331 G333

    IRFF122

    Abstract: IRFF123
    Text: IRFF122,123 F [ f F 5.0 AMPERES 100, 60 VOLTS Rd S ON = 0.4 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


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    PDF IRFIF122 IRFF122^ IRFF123-Â IRFF122 IRFF123

    1rfz44

    Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
    Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)


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    PDF IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5TO-220 IRL510 1rfz44 MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


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    PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    VN88AF

    Abstract: VN89AF VN66AD VN67AD VN88AF SILICONIX VN46AF VN66AF 2N6657 VN0401D IRF622
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN88AF VN89AF VN66AD VN67AD VN88AF SILICONIX VN46AF VN66AF 2N6657 VN0401D IRF622

    mospower cross vn66af

    Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
    Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170


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    PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 mospower cross vn66af VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88

    irf540 TTL

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 irf540 TTL IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    Equivalent IRF 44

    Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
    Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170


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    PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 Equivalent IRF 44 irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422

    VN99AB

    Abstract: VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN99AB VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633

    irf540 equivalent

    Abstract: IRF541 equivalent vn89af equivalent IRF540 irf640 vn0106n1 VN0109n5 IRFF121 IRF232 IRF422
    Text: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170


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    PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 irf540 equivalent IRF541 equivalent vn89af equivalent IRF540 vn0106n1 VN0109n5 IRFF121 IRF232 IRF422

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
    Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss


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    PDF 1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120

    ir 222

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 ir 222 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845