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    Rochester Electronics LLC IRFF223

    N-CHANNEL POWER MOSFET
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    DigiKey IRFF223 Bulk 260
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    Rochester Electronics LLC IRFF433

    N-CHANNEL POWER MOSFET
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    DigiKey IRFF433 Bulk 107
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    Rochester Electronics LLC IRFF232

    N-CHANNEL POWER MOSFET
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    DigiKey IRFF232 Bulk 341
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    Rochester Electronics LLC IRFF221

    N-CHANNEL POWER MOSFET
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    DigiKey IRFF221 Bulk 260
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    Rochester Electronics LLC IRFF322

    N-CHANNEL POWER MOSFET
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    DigiKey IRFF322 Bulk 500
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    Find more IRFF price and stock on Findchips.com

    IRFF Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF014 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF024 International Rectifier HEXFET Power Mosfet Original PDF
    IRFF024 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF034 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF034 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF110 International Rectifier REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE Original PDF
    IRFF110 Intersil 3.5A, 100V, 0.600 ?, N-Channel Power MOSFET Original PDF
    IRFF110 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF110 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF110 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. Scan PDF
    IRFF110 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF110 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF110 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF110 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF110 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF110 Motorola N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Scan PDF
    IRFF110 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF110 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF110 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF110 Unknown FET Data Book Scan PDF
    ...

    IRFF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LD 33 regulator

    Abstract: JANTXV2N6800 IRFF330 JANTX2N6800
    Text: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International


    Original     		PDF 90432C IRFF330 JANTX2N6800 JANTXV2N6800 MIL-PRF-19500/557 O-205AF) LD 33 regulator JANTXV2N6800 IRFF330 JANTX2N6800

    Untitled

    Abstract: No abstract text available
    Text: IRFF9130 Data Sheet Title FF9 0 bt A, 0V, 00 m, February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF9130 -100V, -100V

    0,2uf 250V 6A

    Abstract: No abstract text available
    Text: IRFF420 Data Sheet Title FF4 bt 6A, 0V, 00 m, March 1999 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF420 TB334 0,2uf 250V 6A

    Untitled

    Abstract: No abstract text available
    Text: IRFF330 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF330 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFF120 Data Sheet Title FF1 bt 0A, 0V, 00 m, March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF120 IRFF120 O-205AF TB334,

    TA17441

    Abstract: No abstract text available
    Text: IRFF110 Data Sheet Title FF1 bt 5A, 0V, 00 m, March 1999 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF110 IRFF110 O-205AF TB334 TA17441

    IRF 260 N

    Abstract: IRFF220 JANTX2N6790 JANTXV2N6790
    Text: PD - 90427D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number IRFF220 BVDSS RDS(on) ID 200V 3.5A 0.80Ω T0-39 ® The HEXFET technology is the key to International


    Original     		PDF 90427D O-205AF) IRFF220 JANTX2N6790 JANTXV2N6790 MIL-PRF-19500/555 T0-39 IRFF220, JANTX2N6790, IRF 260 N IRFF220 JANTX2N6790 JANTXV2N6790

    IRFF034

    Abstract: No abstract text available
    Text: IRFF034 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF034 O205AF) 11-Oct-02 IRFF034

    IRFF024

    Abstract: No abstract text available
    Text: IRFF024 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF024 O205AF) 11-Oct-02 IRFF024

    IRFF330

    Abstract: No abstract text available
    Text: IRFF330 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF330 O205AF) 11-Oct-02 IRFF330

    IRFF110

    Abstract: No abstract text available
    Text: IRFF110 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF110 O205AF) 11-Oct-02 IRFF110

    IRFF210

    Abstract: No abstract text available
    Text: IRFF210 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF210 O205AF) 11-Oct-02 IRFF210

    25CC

    Abstract: IRFF210 IRFF213
    Text: MOTOROLA SC XSTRS/R F la g D | b3b?aS4 OQflt.703 T | T -S f-Ö ? IRFF210 IRFF213 M AXIM UM RATIN GS Symbol IRFF210 IRFF213 Unit Drain-Source Voltage Vd s s 200 150 Vdc Drain-Gate Voltage R q s = 1.0 m il Vd g r 200 150 Vdc Rating Gate-Source Voltage + 20


    OCR Scan     		PDF IRFF210 IRFF213 IRFF213 O-205AF) 25CC

    IRFF122

    Abstract: IRFF123
    Text: IRFF122,123 F [ f F 5.0 AMPERES 100, 60 VOLTS Rd S ON = 0.4 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFIF122 IRFF122^ IRFF123-Â IRFF122 IRFF123

    Untitled

    Abstract: No abstract text available
    Text: m Ha r r is IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -3.5 A and -4A , -8 0 V and -1 0 0 V • rDS ON = 0 .6 0 0 and 0 .8 0 0 GATE SOURCE • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRFF9120, IRFF9121 IRFF9122, IRFF9123 IRFF9121, IRFF9122 IRFF9123

    F230

    Abstract: IRFF230 IRFF231
    Text: FUT FIELD EFFECT POWER TRANSISTOR IRFF230.231 5.5 AMPERES 200,150 VOLTS RDS ON = 0.4 il Prelim inary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF -IRFF231 F230 IRFF230 IRFF231

    IRFF420R

    Abstract: IRFF421R IRFF422R IRFF423R
    Text: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Num ber 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1 .4 A a n d 1 .6 A , 4 5 0 V - 5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • ■ ■


    OCR Scan     		PDF IRFF420R, IRFF421R, IRFF422R, IRFF423R 50V-500V IRFF422R IRFF423R 92CS-42660 IRFF420R IRFF421R

    IRFF112

    Abstract: IRFF113
    Text: D D . IRFF112.113 \ñ 3.0 AMPERES 100, 60 VOLTS RDS ON = 0.8 n FIELD EFFECT POWER TRANSISTOR Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF112 IRFF112-â IRFF113

    IRF 3302

    Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
    Text: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited


    OCR Scan     		PDF IRFF430, IRFF431, IRFF432, IRFF433 92CS-3374I IRFF432 IRFF433 IRF 3302 2sc 1894 IRFF430 IRFF431 irf 430

    IRFF332

    Abstract: IRFF333
    Text: FUT FIELD EFFECT POWER TRANSISTOR IRFF332,333 3.0 AM PERES 400, 350 VOLTS BP S O N = 1-5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF332 IRFF333

    IRFF210

    Abstract: IRFF211
    Text: IMEF RELD EFFECT POWER TRANSISTOR IRFF210,211 2.2 AM PERES 200,150 VOLTS RD S O N = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF210 33K/W RFF211â IRFF211

    IRFF9131

    Abstract: IRFF9133 IRFF9130 IRFF9132 transistors c 2216
    Text: Rugged Power MOSFETs IRFF9130, IRFF9131 IRFF9132, IRFF9133 F ile N u m b e r 2216 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5A and -6.5A, -60V and -100V ibs on = 0.30Q and 0.400 TERMINAL DIAGRAM □ Features: • S in g le p u ls e a va la n ch e e n e rg y ra te d


    OCR Scan     		PDF IRFF9130, IRFF9131 IRFF9132, IRFF9133 -100V 92CS-43296 IRFF9131, IRFF9132 IRFF9133 IRFF9130 transistors c 2216

    2029 mosfet

    Abstract: ic l00a IRFF330R IRFF331R IRFF332R IRFF333R
    Text: _ Rugged Power MOSFETs File Num ber 2029 IRFF330R, IRFF331R, IRFF332R, IRFF333R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 350V-400V rDs on = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF330R, IRFF331R, IRFF332R, IRFF333R 50V-400V 2CS-4265S IRFF332R IRFF333R 2029 mosfet ic l00a IRFF330R IRFF331R

    Untitled

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF