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    IRFC Search Results

    IRFC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL9011AIRFCZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9012IRFCZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9014AIRFCZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9000AIRFCZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Very High PSRR, and Low IQ Visit Renesas Electronics Corporation
    ISL9000AIRFCZ Renesas Electronics Corporation Dual LDO with Low Noise, Very High PSRR, and Low IQ Visit Renesas Electronics Corporation
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    IRFC Price and Stock

    Renesas Electronics Corporation ISL9014AIRFCZ

    IC REG LINEAR 2.5V/1.8V 10DFN
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    DigiKey ISL9014AIRFCZ Tube 1,074 2,000
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    Mouser Electronics ISL9014AIRFCZ
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    Renesas Electronics America ISL9014AIRFCZ Tube 1,074 2,000
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    Infineon Technologies AG IRFC3415B

    MOSFET 150V 43A DIE
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    Infineon Technologies AG IRFC024NB

    MOSFET 55V 17A DIE
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    Infineon Technologies AG IRFC240NB

    MOSFET 200V DIE
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    Infineon Technologies AG IRFC7314B

    MOSFET P-CH 20V 5.3A 8-SOIC
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    DigiKey IRFC7314B Reel
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    Find more IRFC price and stock on Findchips.com

    IRFC Datasheets (65)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFC014R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC024R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC034R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC044 International Rectifier HEXFET Power Mosfet Original PDF
    IRFC044R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC054R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC110R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC120R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC130R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC1404 International Rectifier HEXFET Power Mosfet Original PDF
    IRFC140R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC150 IXYS HIGH VOLTAGE POWER MOSFET DIE Scan PDF
    IRFC150 Sharp 100 V, high voltage power MOSFET die Scan PDF
    IRFC150R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC1Z0R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC210R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC214R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC220R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC224R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRFC234R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF

    IRFC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description


    Original     		PDF IRFC18N50KB O-220

    IRFC24N15DB

    Abstract: No abstract text available
    Text: PD - 94750 IRFC24N15DB HEXFET Power MOSFET Die in Wafer Form N-CH l l G S Key Electrical Characteristics Packaged Part c Parameter Description 150V RDS(on) = 95mΩ (max.) 6" Wafer D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚


    Original     		PDF IRFC24N15DB 95film IRFC24N15DB

    shd22512

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD225505 TECHNICAL DATA DATA SHEET 359, REV. A Formerly Part Number - SHD22512 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS


    Original     		PDF SHD22512 SHD225505 O-254 IRFC450 shd22512

    IRFC450

    Abstract: SHD225505 SHD2251
    Text: SENSITRON SEMICONDUCTOR SHD225505 TECHNICAL DATA DATA SHEET 359, REV. A Formerly Part Number - SHD22512 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS


    Original     		PDF SHD225505 SHD22512 O-254 IRFC450 250mA 10Vdc, IRFC450 SHD225505 SHD2251

    ic 4043

    Abstract: IRFC450 SHD225505B
    Text: SENSITRON SEMICONDUCTOR SHD225505B TECHNICAL DATA DATA SHEET 4043, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD225505B O-254 IRFC450 250mA 10Vdc, ic 4043 IRFC450 SHD225505B

    Untitled

    Abstract: No abstract text available
    Text: PD - 94770 IRFC2204B HEXFET Power MOSFET Die in Wafer Form N-CH D l l 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 40V RDS on = 3.6mΩ (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c Min. Typ. Max. Test Conditions


    Original     		PDF IRFC2204B

    IRFC2907

    Abstract: No abstract text available
    Text: PD - 93777B IRFC2907 HEXFET Power MOSFET Die in Wafer Form D 75V RDS on =0.0033Ω 6" Wafer G S Electrical Characteristics (Wafer Form) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance


    Original     		PDF 93777B IRFC2907 200nA IRFC2907

    for IR hexfet die

    Abstract: 90421 irfc044
    Text: PD- 91874 IRFC044 HEXFET Power MOSFET Die in Wafer Form D 60 V Size 4.0 Rds on =0.034Ω 5" Wafer G S Electrical Characteristics ( Wafer Form ) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance


    Original     		PDF IRFC044 12-Mar-07 for IR hexfet die 90421 irfc044

    IRFB18N50K equivalent

    Abstract: No abstract text available
    Text: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description


    Original     		PDF IRFC18N50KB O-220 100nA 12-Mar-07 IRFB18N50K equivalent

    Untitled

    Abstract: No abstract text available
    Text: PD - 94242 IRFC43N50KB D HEXFET Power MOSFET Die in Wafer Form 500V RDS on =0.090Ω 6" Wafer G S Electrical Characteristics Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance


    Original     		PDF IRFC43N50KB 100nA 12-Mar-07

    IRFP2907

    Abstract: bare Die mosfet IRFP2907 Application Notes IRFC2907B
    Text: PD - 93777 IRFC2907B HEXFET Power MOSFET Die in Wafer Form 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack* l Ultra Low On-Resistance Electrical Characteristics * D l Parameter V BR DSS RDS(on)* VGS(th) IDSS IGSS


    Original     		PDF IRFC2907B 200nA IRFP2907 bare Die mosfet IRFP2907 Application Notes IRFC2907B

    irfc20

    Abstract: irfb20n50k
    Text: PD - 94736 IRFC20N50KB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.25Ω


    Original     		PDF IRFC20N50KB irfc20 irfb20n50k

    IRFP460N equivalent

    Abstract: No abstract text available
    Text: PD - 94774 IRFC460NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 500V RDS on = 0.24Ω (max.) 6" Wafer S Electrical Characteristics (TO-247 Package) Parameter V(BR)DSS RDS(on)


    Original     		PDF IRFC460NB O-247 100nA IRFP460N equivalent

    Untitled

    Abstract: No abstract text available
    Text: PD - 95844 IRFC61N15DB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Tape and Reel, Unsawn Wafer, Sawn on Film ‚ G 150V RDS on = 0.032Ω (max.)‚ 6" Wafer S Key Electrical Characteristics (TO-220 package)d Parameter


    Original     		PDF IRFC61N15DB O-220 100nA

    Untitled

    Abstract: No abstract text available
    Text: PD - 94673 IRFC4104B D HEXFET Power MOSFET Die in Wafer Form 100% Tested at Probe  G Available in Chip Pack, Unsawn wafer, S Sawn on Film ‚ Key Electrical Characteristics @TJ=25°C unless otherwise specified (TO-220 package)d l l Parameter V(BR)DSS


    Original     		PDF IRFC4104B O-220 200nA

    shd225505b

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD225505B TECHNICAL DATA DATA SHEET 4043, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD225505B O-254 IRFC450 250mA O-254 shd225505b

    Vgs 40V mosfet

    Abstract: IRFC1404
    Text: PD - 93776 IRFC1404 HEXFET Power MOSFET Die in Wafer Form D 40V Size 4.0 RDS on =0.0029Ω 6" Wafer G S Electrical Characteristics (Wafer Form) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance


    Original     		PDF IRFC1404 200nA Vgs 40V mosfet IRFC1404

    AD580

    Abstract: AD580J AD580K AD580L AD580M S30V
    Text: • S .ii- i- fí’ J. x i'ifó rlV V iü ^ T irfc l. '■,! gg- SSI + 3l 0¿ + A tí d d A ií yui Aui •91 ? ? W M -lM -H W v ' l H W S fflïlïS H S l« 0>ci V 921 + 9 9 - 921 + 9 9 - 921 + 0¿ + 0¿ + ' 5 ■•i i i* Î ^ U f 3 5 » í i» S - Y # ‘' H ö l v +


    OCR Scan     		PDF AD580 MIL-STD-883B AD580M) AD580M, 350mW 10sec CAD580J, C-70tn AD580J AD580K AD580 AD580J AD580K AD580L AD580M S30V

    Untitled

    Abstract: No abstract text available
    Text: This information is given as an indication. In the continual goal to improve our products, we reserve the right to make any modifications judged necessary irfcSii llJCl RADI ALL Microwave components 22GHz SMA OPTIONS : INDICATOR TECHNICAL DATA SHEET LATCHING


    OCR Scan     		PDF 22GHz F63121

    1RF520

    Abstract: 1RFP460 1RFP150 IRF9540 equivalent irfp450 equivalent 1rfbc20 IRF9640 equivalent 1RFP054 1RFPG50 IRFP260 equivalent
    Text: International HEXFET Power MOSFETs I ö R Rectifier HEX Size Part Number VDS Recommended Source Bonding Wire RDS on Die Outline Figure m|s mm Equivalent Device Type HEXFET® Die 2 IRFC420 500 3 D9 8 0.2 *> IRFCC20 600 4.4 DIO 8 0.2 1RFBC20 2 IRFCE20 800


    OCR Scan     		PDF IRFC420 IRFCC20 IRFCE20 IRFCF20 IRFCG20 1RFC034 IRFC120 IRFCG50 IRFCC40 IRFC460 1RF520 1RFP460 1RFP150 IRF9540 equivalent irfp450 equivalent 1rfbc20 IRF9640 equivalent 1RFP054 1RFPG50 IRFP260 equivalent

    IRFZ44 equivalent

    Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
    Text: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214


    OCR Scan     		PDF IRFC014 IRFC110 IRFC210 IRFC214 IRFC310 IRFC024 IRFC120 IRFC220 IRFC224 IRFC320 IRFZ44 equivalent IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30

    1rlz44

    Abstract: 1RL530 1RLZ34 irfc9024 1RL520 IRFC9014 IRFC RF9620
    Text: International IÖ R Rectifier HEX Size Part Number HEXFETRPower MOSFETs V ds «DSM Recommended Source Bonding Wire Die Outline Figure mi|s mm Equivalent Device Type HEXFET Die 3 IRFC 9 23 0 -200 0.8 D4I 8 0.2 3 T ÌRFC9130 -I00 0.3 D40 in 0.25 [RF9530 IRFC 9 2 2 0 *


    OCR Scan     		PDF RFC9130 RFC9014 IRFC9024 IRF9630 RF9530 RF9620 IRF9520 IRFR9014 1rlz44 1RL530 1RLZ34 1RL520 IRFC9014 IRFC

    irfc140

    Abstract: IRFC9230 IRFC9140 IRFC9240 IRFC120 IRFC330 IRFC420 IRFC340 IRFC9130 irfc230
    Text: SURFACE MOUNT DEVICES o PEAK RDS ON DEVICE B V o ss *D @0.5 (D PACKAGE PAK 1 TYPE VOLTS AMPS OHMS CHIP SNLC120 100 9.2 0.27 IRFC120 SNLC220 200 5.0 0.08 IRFC220 SNLC320 400 3.3 1.80 IRFC320 SNLC420 500 2.5 3.08 IRFC420 SNLC130 100 200 14.0 0.16 IRFC130 9.0


    OCR Scan     		PDF SNLC120 SNLC220 SNLC320 SNLC420 SNLC130 SNLC230 SHLC330 SNLC430 SNLC140 SNLC240 irfc140 IRFC9230 IRFC9140 IRFC9240 IRFC120 IRFC330 IRFC420 IRFC340 IRFC9130 irfc230

    Untitled

    Abstract: No abstract text available
    Text: 0.75" Light Bar FEATURES • 0.75" light bar • Suitable for backlighting OPTO-ELECTRICAL CHARACTERISTICS Ta = 25°C MAXIMUM RATINGS PART NO. PEAKViJW E LENGTH (•wi) E w rreo COLOR PC VRM W OPTO ELECTRICAL CHARACTERISTICS IRfciAJ V*c) typ- max. @mA max.


    OCR Scan     		PDF MTLB5175-R MTLB2175-G MTLB3175-Y MTLB4175-0 98-4LEDS