IRF9Z24N P-CHANNEL POWER Search Results

IRF9Z24N P-CHANNEL POWER Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TLP294-4		Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16
TLP295-4		Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

IRF9Z24N P-CHANNEL POWER Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRf 48 MOSFET Abstract: IRF9Z24N Text: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	1484B IRF9Z24N O-220 IRf 48 MOSFET IRF9Z24N
Untitled Abstract: No abstract text available Text: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V l RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	1484B IRF9Z24N O-220 appli245,
IRF9Z24N Abstract: P-Channel irf IRf 48 MOSFET Text: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	1484B IRF9Z24N O-220 IRF9Z24N P-Channel irf IRf 48 MOSFET
Untitled Abstract: No abstract text available Text: IRF9Z24N TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation	Original	PDF	IRF9Z24N O-220AB O-220 O-220
IRf 48 MOSFET Abstract: IRF9Z24N Text: PD -9.1484A IRF9Z24N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	IRF9Z24N O-220 IRf 48 MOSFET IRF9Z24N
Untitled Abstract: No abstract text available Text: AUTOMOTIVE GRADE PD - 96351 AUIRFR9024N AUIRFU9024N Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax	Original	PDF	AUIRFR9024N AUIRFU9024N
U5505 Abstract: AUFR5505 P-Channel MOSFET 800v AUIRFR5505 AUIRFU5505 Text: PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax	Original	PDF	AUIRFR5505 AUIRFU5505 U5505 AUFR5505 P-Channel MOSFET 800v AUIRFR5505 AUIRFU5505
Untitled Abstract: No abstract text available Text: PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax	Original	PDF	AUIRFR5505 AUIRFU5505
u9024n Abstract: AUFR9024N AUIRFR9024N AUIRFU9024N AUIRFR9024NTR marking code H1a AUIRFR AUFR902 Text: AUTOMOTIVE GRADE PD - 96351 AUIRFR9024N AUIRFU9024N Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax	Original	PDF	AUIRFR9024N AUIRFU9024N u9024n AUFR9024N AUIRFR9024N AUIRFU9024N AUIRFR9024NTR marking code H1a AUIRFR AUFR902
IRF5905 Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES	Original	PDF	O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
sumida 94V-0 Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.	Original	PDF	IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	PDF	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Untitled Abstract: No abstract text available Text: PD -9.1484A International IO R Rectifier IRF9Z24N PRELIMINARY HEXFET^ Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V ^ D S o n =	OCR Scan	PDF	IRF9Z24N
f9z24 Abstract: No abstract text available Text: PD-9.1484A International I O R Rectifier IRF9Z24N HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -55 V R iDS on = 0.1750 lD = -12A	OCR Scan	PDF	IRF9Z24N O-220 C-278 C-279 f9z24

F1010 Abstract: IRF9Z24N 2D 1002 diode IRf9z24n P-channel power Text: PD -9.1484A International IGR Rectifier IRF9Z24N PRELIMINARY H E XFE T Pow er M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V q s s = -55 V	OCR Scan	PDF	IRF9Z24N F1010 IRF9Z24N 2D 1002 diode IRf9z24n P-channel power