Untitled
Abstract: No abstract text available
Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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PDF
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IRF9Z14,
SiHF9Z14
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRF9Z14 vishay
Abstract: No abstract text available
Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRF9Z14,
SiHF9Z14
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF9Z14 vishay
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IRF9Z14
Abstract: No abstract text available
Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRF9Z14,
SiHF9Z14
2002/95/EC
O-220AB
O-220AB
11-Mar-11
IRF9Z14
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Untitled
Abstract: No abstract text available
Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRF9Z14,
SiHF9Z14
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRF9Z14
Abstract: No abstract text available
Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRF9Z14,
SiHF9Z14
O-220
O-220
18-Jul-08
IRF9Z14
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Untitled
Abstract: No abstract text available
Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRF9Z14,
SiHF9Z14
O-220AB
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRF9Z14,
SiHF9Z14
O-220
O-220
18-Jul-08
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IRF9Z14
Abstract: No abstract text available
Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRF9Z14,
SiHF9Z14
O-220
O-220
IRF9Z14
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irf9z14
Abstract: sihf9z14 IRF9Z14, SiHF9Z14
Text: IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRF9Z14,
SiHF9Z14
O-220
O-220
12-Mar-07
irf9z14
IRF9Z14, SiHF9Z14
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Untitled
Abstract: No abstract text available
Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Advanced Process Technology • Surface Mount (IRF9Z14S/SiHF9Z14S) • Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L) - 60 RDS(on) (Ω) VGS = - 10 V 0.50
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IRF9Z14S,
SiHF9Z14S
IRF9Z14L,
SiHF9Z14L
IRF9Z14S/SiHF9Z14S)
IRF9Z14L/SiHF9Z14L)
O-262)
O-263)
12-Mar-07
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91089
Abstract: IRF9Z14L IRF9Z14S SiHF9Z14S SiHF9Z14S-E3
Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Advanced Process Technology • Surface Mount (IRF9Z14S/SiHF9Z14S) • Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L) - 60 RDS(on) (Ω) VGS = - 10 V 0.50
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Original
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PDF
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IRF9Z14S,
SiHF9Z14S
IRF9Z14L,
SiHF9Z14L
IRF9Z14S/SiHF9Z14S)
IRF9Z14L/SiHF9Z14L)
O-262)
18-Jul-08
91089
IRF9Z14L
IRF9Z14S
SiHF9Z14S-E3
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IRF9Z14
Abstract: IRF9Z14L IRF9Z14S SiHF9Z14S SiHF9Z14S-E3
Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single Advanced Process Technology
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Original
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PDF
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IRF9Z14S,
SiHF9Z14S
IRF9Z14L,
SiHF9Z14L
O-263)
O-262)
IRF9Z14
IRF9Z14L
IRF9Z14S
SiHF9Z14S-E3
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Untitled
Abstract: No abstract text available
Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z14S, SiHF9Z14S) • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)
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Original
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PDF
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IRF9Z14S,
SiHF9Z14S
IRF9Z14L,
SiHF9Z14L
2002/95/EC
O-262)
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Untitled
Abstract: No abstract text available
Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z14S, SiHF9Z14S) • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)
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Original
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PDF
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IRF9Z14S,
SiHF9Z14S
IRF9Z14L,
SiHF9Z14L
2002/95/EC
11-Mar-11
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|
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Untitled
Abstract: No abstract text available
Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z14S, SiHF9Z14S) • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)
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Original
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PDF
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IRF9Z14S,
SiHF9Z14S
IRF9Z14L,
SiHF9Z14L
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z14S, SiHF9Z14S) • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)
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Original
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PDF
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IRF9Z14S,
SiHF9Z14S
IRF9Z14L,
SiHF9Z14L
2002/95/EC
2011/65/EU
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Untitled
Abstract: No abstract text available
Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω
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PDF
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IRF9Z14S/L
IRF9Z14S)
IRF9Z14L)
08-Mar-07
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IRF9Z14L
Abstract: IRF9Z14S
Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω
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Original
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IRF9Z14S/L
IRF9Z14S)
IRF9Z14L)
12-Mar-07
IRF9Z14L
IRF9Z14S
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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