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    IRF7494PBF Search Results

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    IRF7494PBF Price and Stock

    Infineon Technologies AG IRF7494PBF

    MOSFET N-CH 150V 5.1A 8SO
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    DigiKey IRF7494PBF Tube
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    Win Source Electronics IRF7494PBF 23,400
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    International Rectifier IRF7494PBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 5.1A I(D), 150V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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    ComSIT USA IRF7494PBF 508
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    IRF7494PBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7494PBF International Rectifier Original PDF

    IRF7494PBF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN1001

    Abstract: No abstract text available
    Text: PD - 95349B IRF7494PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		95349B IRF7494PbF AN1001) AN1001 PDF

    irf7494trpbf

    Abstract: 51A SO8
    Text: PD - 95349C IRF7494PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 150V 44mΩ@VGS = 10V 5.1A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


    Original     		95349C IRF7494PbF AN1001) IRF7494 IRF7494 IRF7494PBF IRF7494TR IRF7494TRPBF 15-Nov-2010 51A SO8 PDF

    AN1001

    Abstract: 51a marking
    Text: PD - 95349C IRF7494PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 150V 44mΩ@VGS = 10V 5.1A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


    Original     		95349C IRF7494PbF AN1001) AN1001 51a marking PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101 MS-012AA
    Text: PD - 95349 IRF7494PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		IRF7494PbF AN1001) AN1001 EIA-541 F7101 IRF7101 MS-012AA PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101 MS-012AA
    Text: PD - 95349A IRF7494PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		5349A IRF7494PbF AN1001) AN1001 EIA-541 F7101 IRF7101 MS-012AA PDF

    IRLML0030

    Abstract: IRLB3034 IRFB4110 irfp4004 irls4030 IRFB4020PBF IRFP4568 IRFP4229 HEXFEt Power MOSFET Design Guide IRLB3036
    Text: Benchmark MOSFETs | Selection Guide Product Line Overview Broad Portfolio of MOSFETS Targeting Multiple Market Segments Industrial Key Differentiators Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that


    Original     		0435A IRLML0030 IRLB3034 IRFB4110 irfp4004 irls4030 IRFB4020PBF IRFP4568 IRFP4229 HEXFEt Power MOSFET Design Guide IRLB3036 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    hp laptop MOTHERBOARD pcb CIRCUIT diagram

    Abstract: ips 500w circuit diagram 800w class d circuit diagram schematics IRS2092 audio amplifier circuit diagram 700w audio amplifier circuit diagram schematic diagram Electronic Ballast xenon 2000w audio amplifier circuit diagram 1000w class d circuit diagram schematics IR2153 spice model circuit diagram of smps 400w DESKTOP
    Text: Product Line Overview Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and manufacturing Bill of Material


    Original     		PDF