IRF634
Abstract: IRF634FP
Text: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3
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IRF634
IRF634FP
O-220/TO-220FP
O-220
O-220FP
IRF634
IRF634FP
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IRF634
Abstract: IRF634FP IRF-634
Text: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3
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IRF634
IRF634FP
O-220/TO-220FP
O-220
O-220FP
P011C
IRF634
IRF634FP
IRF-634
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irf634
Abstract: st 393 IRF634FP JESD97 IRF63 irf6
Text: IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS RDS on ID IRF634 250V <0.45Ω 8A IRF634FP 250V <0.45Ω 8A 3 • Extremely High dv/dt Capability ■ 100% Avalanche Tested 1 TO-220 3 2
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IRF634
IRF634FP
O-220
/TO-220FP
O-220
O-220FP
irf634
st 393
IRF634FP
JESD97
IRF63
irf6
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IRF634
Abstract: IRF634FP JESD97
Text: IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS RDS on ID IRF634 250V <0.45Ω 8A IRF634FP 250V <0.45Ω 8A 3 • Extremely High dv/dt Capability ■ 100% Avalanche Tested 1 3 2 1 TO-220
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IRF634
IRF634FP
O-220
/TO-220FP
O-220
O-220FP
IRF634
IRF634FP
JESD97
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IRF634
Abstract: mosfet to 220 gate drain
Text: INCHANGE MOSFET IRF634 N-channel mosfet transistor Features 123 ・With TO-220 package ・Simple drive requirements ・Fast switching ・VDSS=250V; RDS ON ≤0.45Ω;ID=8.1A ・1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER
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IRF634
O-220
O-220
IRF634
mosfet
to 220 gate drain
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IRF634
Abstract: SiHF634 SiHF634-E3
Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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IRF634,
SiHF634
O-220
O-220
18-Jul-08
IRF634
SiHF634-E3
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Untitled
Abstract: No abstract text available
Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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IRF634,
SiHF634
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRF634
Abstract: SiHF634 SiHF634-E3
Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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IRF634,
SiHF634
2002/95/EC
O-220AB
O-220AB
11-Mar-11
IRF634
SiHF634-E3
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Untitled
Abstract: No abstract text available
Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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IRF634,
SiHF634
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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IRF634,
SiHF634
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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IRF634,
SiHF634
O-220
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRF634,
SiHF634
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRF634,
SiHF634
2002/95/EC
O-220AB
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRF634,
SiHF634
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRF634 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)8.1# I(DM) Max. (A) Pulsed I(D)5.1 @Temp (øC)100# IDM Max (@25øC Amb)32# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)74# Minimum Operating Temp (øC)-55õ
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IRF634
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Untitled
Abstract: No abstract text available
Text: , L/ nc. / C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF634 0(2) DESCRIPTION • Drain Current-ID=8.1A@ TC=25°C • Drain Source Voltage: VDSS= 250V(Min) • Static Drain-Source On-Resistance
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IRF634
O-220C
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRF634 FEATURES • • • • • • • T O -2 2 0 Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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IRF634
b414E
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d0147
Abstract: No abstract text available
Text: International " ,assM” 0011,728 081 " INR PD‘9476C [jag Rectifier_ IRF634 HEXFET Power MOSFET • • • • • INTERNATIONAL RECTIFIER bSE J> Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
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IRF634
S54S2
D014733
d0147
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IRF634
Abstract: irf634 mosfet
Text: IRF634 A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology 250 V 0.45a ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 8.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V
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IRF634
IRF634
irf634 mosfet
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IRF635
Abstract: IRF637 IRF636 IRF634 F634 fs34 diode IFIF634 IFIF636 IFIF637 irf634 mosfet
Text: _ Rugged Power MOSFETs F ile N u m b e r IRF634, IRF635, IRF636, IRF637 2168 Avalanche Energy Rated N-Channel Power MOSFETs N -C HANNEL EN HANCEM ENT MODE 8.1 A, and 6.5A, 275, 250V Tds on = 0.45Q, 0.68Q Features: • Single pulse avalanche energy rated
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IRF634,
IRF635,
IRF636,
IRF637
IRF637
IRF635
IRF636
IRF634
F634
fs34 diode
IFIF634
IFIF636
IFIF637
irf634 mosfet
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Untitled
Abstract: No abstract text available
Text: IRF634 A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 0 .4 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 8 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V
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IRF634
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Untitled
Abstract: No abstract text available
Text: IRF634 Advanced Power MOSFET FEATURES - 250 V ♦ Rugged Gate Oxide Technology ^ D S o n = 0.45Q ♦ Lower Input Capacitance lD = 8.1 A B ^D S S ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V
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IRF634
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F634
Abstract: irf635 IRF634d IRF637
Text: IRF634, IRF635 IRF636, IRF637 23 H A R R I S N-Channel Power MOSFETs Avalanche Energy Rated A u g u st 1991 Package Features T O -22 0 A B • 8.1A and 6.5A, 250V - 275V T O P VIEW • rps on = 0.45ft and 0.68H • Single Pulse Avalanche Energy Rated • S O A is Power-Dissipatlon Limited
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IRF634,
IRF635
IRF636,
IRF637
275/250V
IRF635,
F634
IRF634d
IRF637
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRO NICS IN C b?E D • 7 S b m i42 G0 1 7 2 Ô3 I b b ■ N-CHANNEL POWER MOSFETS IRF634/635 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance
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IRF634/635
IRF634
IRF635
DC172Ã
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