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Vishay Siliconix IRF620PBF-BE3 MOSFET N-CH 200V 5.2A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF620PBF-BE3	Tube	2,494		1	1 $1.71 10 $1.71 100 $1.71 1000 $0.52451 10000 $0.42363	Buy Now
Vishay Siliconix IRF624SPBF MOSFET N-CH 250V 4.4A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF624SPBF	Tube	969		1	1 $2.84 10 $2.84 100 $2.84 1000 $1.02138 10000 $1.02138	Buy Now
Vishay Siliconix IRF620STRRPBF MOSFET N-CH 200V 5.2A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF620STRRPBF	Cut Tape	800		1	1 $2.78 10 $1.794 100 $2.78 1000 $2.78 10000 $2.78	Buy Now
	IRF620STRRPBF	Reel	800		800	1 - 10 - 100 - 1000 $0.9413 10000 $0.82375	Buy Now
	IRF620STRRPBF	Digi-Reel	800		1	1 $2.78 10 $1.794 100 $2.78 1000 $2.78 10000 $2.78	Buy Now
Vishay Siliconix IRF620STRLPBF MOSFET N-CH 200V 5.2A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF620STRLPBF	Digi-Reel	726		1	1 $2.78 10 $1.794 100 $2.78 1000 $2.78 10000 $2.78	Buy Now
	IRF620STRLPBF	Cut Tape	726		1	1 $2.78 10 $1.794 100 $2.78 1000 $2.78 10000 $2.78	Buy Now
	IRF620STRLPBF	Reel	715		800	1 - 10 - 100 - 1000 $0.9413 10000 $0.82375	Buy Now
Vishay Siliconix IRF620PBF MOSFET N-CH 200V 5.2A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF620PBF	Tube	691		1	1 $1.71 10 $1.71 100 $1.71 1000 $0.52451 10000 $0.42363	Buy Now
RS	IRF620PBF	Bulk			1,000	1 - 10 - 100 - 1000 $0.86 10000 $0.81	Get Quote
New Advantage Corporation	IRF620PBF		2,300		1	1 - 10 - 100 - 1000 $0.45 10000 $0.42	Buy Now

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IRF62 Datasheets (265)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF620	Fairchild Semiconductor	5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET	Original	PDF
IRF620	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF620	International Rectifier	200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package	Original	PDF
IRF620	Intersil	5.0A, 200V, 0.800 ?, N-Channel Power MOSFET	Original	PDF
IRF620	STMicroelectronics	OLD PRODUCT:NOT SUITABLE FOR NEW DESIGN-IN	Original	PDF
IRF620	STMicroelectronics	N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS	Original	PDF
IRF620	STMicroelectronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 6A TO-220	Original	PDF
IRF620	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF620	Transys Electronics	Power MOSFET	Original	PDF
IRF620	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.2A TO-220AB	Original	PDF
IRF620	Fairchild Semiconductor	N-Channel Power MOSFETs, 7A, 150-200V	Scan	PDF
IRF620	FCI	POWER MOSFETs	Scan	PDF
IRF620	Frederick Components	Power MOSFET Selection Guide	Scan	PDF
IRF620	General Electric	Power Transistor Data Book 1985	Scan	PDF

IRF620	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A.	Scan	PDF
IRF620	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF620	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 5.9A, Pkg Iso TO-220 Fullpak	Scan	PDF
IRF620	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRF620	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF620	Motorola	Switchmode Datasheet	Scan	PDF

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IRF62 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	PDF	IRF620S, SiHF620S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRF620 Abstract: IRF620FP Text: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK	Original	PDF	IRF620 IRF620FP O-220/FP O-220FP O-220 IRF620 IRF620FP
Untitled Abstract: No abstract text available Text: PD - 95626 IRF624PbF • Lead-Free Document Number: 91029 8/3/04 www.vishay.com 1 IRF624PbF Document Number: 91029 www.vishay.com 2 IRF624PbF Document Number: 91029 www.vishay.com 3 IRF624PbF Document Number: 91029 www.vishay.com 4 IRF624PbF Document Number: 91029	Original	PDF	IRF624PbF 08-Mar-07
Untitled Abstract: No abstract text available Text: PD - 94870 IRF620PbF • Lead-Free 12/5/03 Document Number: 91027 www.vishay.com 1 IRF620PbF Document Number: 91027 www.vishay.com 2 IRF620PbF Document Number: 91027 www.vishay.com 3 IRF620PbF Document Number: 91027 www.vishay.com 4 IRF620PbF Document Number: 91027	Original	PDF	IRF620PbF O-220AB 08-Mar-07
Untitled Abstract: No abstract text available Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
IRF6215 Abstract: No abstract text available Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	91479B IRF6215 -150V O-220 IRF6215
irf6217trpbf Abstract: AN 9525.2 Text: PD - 95252 SMPS MOSFET IRF6217PbF HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See	Original	PDF	IRF6217PbF -150V AN1001) IRF6217 15-Nov-2010 irf6217trpbf AN 9525.2
IRF620 application Abstract: IRF620 Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark	Original	PDF	IRF620 IRF620FP O-220/TO-220FP O-220 O-220FP IRF620FP IRF620 application
IRF624A Abstract: No abstract text available Text: IRF624A Advanced Power MOSFET FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology RDS on = 1.1 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 4.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V	Original	PDF	IRF624A O-220 IRF624A
IRF620 application Abstract: IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark	Original	PDF	IRF620 IRF620FP O-220/TO-220FP O-220 O-220FP IRF620 application IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics
IRF620 Abstract: No abstract text available Text: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK	Original	PDF	O-220/FP IRF620 IRF620FP O-220 O-220FP O-220 P011C
IRF624B Abstract: IRFS624B IRF series Text: IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRF624B/IRFS624B O-220 IRF624B IRFS624B IRF series
AN1001 Abstract: IRF6218 Text: PD - 95862 IRF6218 SMPS MOSFET HEXFET Power MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including	Original	PDF	IRF6218 -150V AN1001) O-220AB IRF1010 -520A/ AN1001 IRF6218
IRF6218 Abstract: AN1001 marking code 27a Text: PD - 95862 IRF6218 SMPS MOSFET HEXFET Power MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including	Original	PDF	IRF6218 -150V AN1001) O-220AB IRF1010 -520A/ IRF6218 AN1001 marking code 27a

Untitled Abstract: No abstract text available Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	91479B IRF6215 -150V O-220 appl245,
Untitled Abstract: No abstract text available Text: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	IRF6215PbF -150V O-220 O-220AB. O-220AB IRF1010
Untitled Abstract: No abstract text available Text: IRF624A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|^A(Max.) @ V DS = 250V	OCR Scan	PDF	IRF624A
IRF621 Abstract: IRF620 Text: ZETEX SEMICONDUCTORS JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^ 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability	OCR Scan	PDF	IRF620 IRF621 IRF622 IRF623 O-220
D84CN2 Abstract: IRF620 RF620 Text: PUF IRF620.621 D84CN2.M2 5 AMPERES 200,150 VOLTS Rd s (ON = 0.8 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	IRF620 D84CN2 00A/jUsec, 300/js, 250MA, RF620
IRF622 Abstract: IRF623 IRF622 ge Ge 2sa IDM-16 Text: IFSMm-ßKS FUT FIELD EFFECT POWER TRANSISTOR IRF622,623 4 AMPERES 200,150 VOLTS Rd S(ON = 1-2« This series of N-Channel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	IRF622 00A///sec, IRF623 IRF622 ge Ge 2sa IDM-16
Untitled Abstract: No abstract text available Text: PD - 91643 International IGR Rectifier IRF6215S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface Mount IRF6215S Low-profile through-hole (IRF6215L) 1 7 5 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated	OCR Scan	PDF	IRF6215S/L IRF6215S) IRF6215L)
Untitled Abstract: No abstract text available Text: P D -9 1 4 7 9 B International Iör Rectifier IRF6215 HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description V dss = •"! 50V RüS on = 0.29Î2	OCR Scan	PDF	IRF6215
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance	OCR Scan	PDF	7Tbm42 GD12174 IRF620/621/622/623 IRF620 IRF621 IRF622 IRF623
IRF620A Abstract: No abstract text available Text: IRF620A Advanced Power M O SFET FEATURES — 200 V R u g g e d G a te O x id e T e c h n o lo g y ^ D S o n = 0.8 £2 • L o w e r In p u t C a p a c ita n c e lD = 5 A ■ Im p ro v e d G a te C h a rg e D S S ■ A v a la n c h e ■ R u g g e d T e c h n o lo g y	OCR Scan	PDF	IRF620A O-220 IRF620A

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Vishay Siliconix IRF620PBF-BE3

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IRF62 Datasheets (265)

IRF62 Datasheets Context Search

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IRF620

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IRF6215

irf6217trpbf

IRF620 application

IRF624A

IRF620 application

IRF620

IRF624B

AN1001

IRF6218

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IRF621

D84CN2

IRF622

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IRF620A