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    IRF3305PBF Price and Stock

    Infineon Technologies AG IRF3305PBF

    MOSFET N-CH 55V 75A TO220AB
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    DigiKey IRF3305PBF Tube
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    Others IRF3305PBF

    AVAILABLE EU
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    ComSIT USA IRF3305PBF 3,600
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    International Rectifier IRF3305PBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA IRF3305PBF 350
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    IRF3305PBF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF3305PBF International Rectifier Original PDF
    IRF3305PBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF3305 with Lead Free Packaging Original PDF

    IRF3305PBF Datasheets Context Search

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    IRF 930

    Abstract: IRF3305
    Text: PD - 95758A IRF3305PbF Features l Designed to support Linear Gate Drive Applications l 175°C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche Rated l Lead-Free HEXFET Power MOSFET D


    Original
    PDF 5758A IRF3305PbF 45C/W" O-220AB O-220AB IRF 930 IRF3305

    Untitled

    Abstract: No abstract text available
    Text: PD - 95758A IRF3305PbF Features l Designed to support Linear Gate Drive Applications l 175°C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche Rated l Lead-Free HEXFET Power MOSFET D


    Original
    PDF 5758A IRF3305PbF 45C/W" O-220AB O-220AB

    IRF3305

    Abstract: irf3305pbf
    Text: PD - 95758 AUTOMOTIVE MOSFET IRF3305PbF Features O O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Lead-Free HEXFET Power MOSFET


    Original
    PDF IRF3305PbF 45C/W IRF3305 O-220AB irf3305pbf

    Untitled

    Abstract: No abstract text available
    Text: PD - 95758 AUTOMOTIVE MOSFET IRF3305PbF Features O O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Lead-Free HEXFET Power MOSFET


    Original
    PDF IRF3305PbF 45C/W IRF3305 O-220AB

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original
    PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter