IRF1BC40G Search Results

IRF1Bc40g

Abstract: IRF1BC40 IRF1BC40GLC SAJ 220 IRFIBC40GLC 7z mosfet ID37A
Text: PD-9.1211 International S Rectifier IRFIBC40GLC HEXFET Pow er M O SFET Isolated Package High Voltage lsolatlon= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V DSS = 600V R DS on = 1 In = 3.5A D escription Third Generation HEXFETs from International Rectifier provide the designer