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    IRF1010 Price and Stock

    Infineon Technologies AG IRF1010EZPBF

    MOSFET N-CH 60V 75A TO220AB
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    DigiKey IRF1010EZPBF Tube 7,964 1
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    Mouser Electronics IRF1010EZPBF 3,370
    • 1 $1.63
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    Verical IRF1010EZPBF 11,000 1,000
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    IRF1010EZPBF 938 27
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    Arrow Electronics IRF1010EZPBF 10,300 12 Weeks 1
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    Newark IRF1010EZPBF Bulk 2,870 1
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    Rochester Electronics IRF1010EZPBF 3,864 1
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    EBV Elektronik IRF1010EZPBF 13 Weeks 1,000
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    Infineon Technologies AG IRF1010ESTRLPBF

    MOSFET N-CH 60V 84A D2PAK
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    DigiKey IRF1010ESTRLPBF Cut Tape 2,588 1
    • 1 $2.35
    • 10 $1.509
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    IRF1010ESTRLPBF Digi-Reel 2,588 1
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    IRF1010ESTRLPBF Reel 1,600 800
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    Mouser Electronics IRF1010ESTRLPBF 757
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    Arrow Electronics IRF1010ESTRLPBF 19,200 10 Weeks 800
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    Newark IRF1010ESTRLPBF Cut Tape 186 1
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    Rochester Electronics IRF1010ESTRLPBF 133 1
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    EBV Elektronik IRF1010ESTRLPBF 11 Weeks 800
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    Infineon Technologies AG IRF1010ZSTRLPBF

    MOSFET N-CH 55V 75A D2PAK
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    DigiKey IRF1010ZSTRLPBF Cut Tape 1,909 1
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    IRF1010ZSTRLPBF Digi-Reel 1,909 1
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    IRF1010ZSTRLPBF Reel 1,600 800
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    Arrow Electronics IRF1010ZSTRLPBF 3,200 12 Weeks 800
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    Newark IRF1010ZSTRLPBF Cut Tape 3,380 1
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    EBV Elektronik IRF1010ZSTRLPBF 6,400 13 Weeks 800
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    Infineon Technologies AG IRF1010NSTRLPBF

    MOSFET N-CH 55V 85A D2PAK
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    DigiKey IRF1010NSTRLPBF Digi-Reel 1,660 1
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    IRF1010NSTRLPBF Cut Tape 1,660 1
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    Mouser Electronics IRF1010NSTRLPBF 8,450
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    Arrow Electronics IRF1010NSTRLPBF 8,800 8 Weeks 800
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    EBV Elektronik IRF1010NSTRLPBF 25,600 9 Weeks 800
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    New Advantage Corporation IRF1010NSTRLPBF 12,800 1
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    Rochester Electronics LLC AUIRF1010Z

    MOSFET N-CH 55V 75A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AUIRF1010Z Bulk 281
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    IRF1010 Datasheets (94)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF1010 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF1010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF1010E International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010E with Standard Packaging Original PDF
    IRF1010E International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010E International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010E International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 81A, Pkg Style TO-220AB Scan PDF
    IRF1010EL International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging Original PDF
    IRF1010EL International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010EL International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010EL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010ELPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1010EL with Lead Free Packaging Original PDF
    IRF1010ELPBF International Rectifier TRANS MOSFET N-CH 60V 84A 3TO-262 Original PDF
    IRF1010EPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010E with Lead-Free Packaging. Original PDF
    IRF1010EPBF International Rectifier TRANS MOSFET N-CH 60V 84A 3TO-220AB Original PDF
    IRF1010ES International Rectifier HEXFET Power Mosfet Original PDF
    IRF1010ES International Rectifier HEXFET Power Mosfet Original PDF
    IRF1010ES International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1010ES with Standard Packaging Original PDF
    IRF1010ES Toshiba Power MOSFETs Cross Reference Guide Original PDF

    IRF1010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-994

    Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
    Text: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V


    Original
    PDF IRF1010ES) IRF1010EL) IRF1010ESPbF IRF1010ELPbF EIA-418. AN-994 IRF1010EL IRF1010ES IRF530S IRF1010ELPBF

    AN-994

    Abstract: IRF1010N IRF1010NS IRF530S
    Text: Previous Datasheet Index Next Data Sheet PD 9.1372 IRF1010NS PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω


    Original
    PDF IRF1010NS AN-994 IRF1010N IRF1010NS IRF530S

    IRF1010N

    Abstract: IRF1010
    Text: Previous Datasheet Index Next Data Sheet PD 9.1278B IRF1010N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012 Ω ID = 72A Description


    Original
    PDF 1278B IRF1010N O-220 IRF1010N IRF1010

    marking code 43a

    Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


    Original
    PDF 91372B IRF1010NS/L IRF1010NS) IRF1010NL) packag10) marking code 43a 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL

    Untitled

    Abstract: No abstract text available
    Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    PDF IRF1010E O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 7.5mΩ


    Original
    PDF 5361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AN-994.

    IRF1010Z

    Abstract: IRF1010ZL IRF1010ZS
    Text: PD - 95361 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


    Original
    PDF IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF IRF1010Z IRF1010ZL IRF1010ZS

    Untitled

    Abstract: No abstract text available
    Text: IRF1010NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL


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    PDF IRF1010NS/LPbF EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: IRF1010NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)


    Original
    PDF IRF1010NPbF O-220AB O-220AB.

    AN-994

    Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


    Original
    PDF 91372B IRF1010NS/L IRF1010NS) IRF1010NL) AN-994 IRF1010N IRF1010NL IRF1010NS to262 pcb footprint

    Untitled

    Abstract: No abstract text available
    Text: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


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    PDF IRF1010EPbF O-220 fo20AB

    marking F53

    Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS SS2000
    Text: PD - 9.1372A IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.011Ω G ID = 84A†


    Original
    PDF IRF1010NS/L IRF1010NS) IRF1010NL) marking F53 AN-994 IRF1010N IRF1010NL IRF1010NS SS2000

    irf1010e

    Abstract: irf1010e equivalent *f1010e
    Text: PD - 9.1670B IRF1010E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 0.012Ω G ID = 81A… S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 1670B IRF1010E O-220 irf1010e irf1010e equivalent *f1010e

    51a marking

    Abstract: IRF1010EZS AN-994 IRF1010EZ IRF1010EZL
    Text: PD - 94724B IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


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    PDF 94724B IRF1010EZ IRF1010EZS IRF1010EZL O-220AB 51a marking IRF1010EZS AN-994 IRF1010EZ IRF1010EZL

    DM marking code

    Abstract: irf 560 IRF1010Z IRF1010ZL IRF1010ZS
    Text: PD - 94652A IRF1010Z IRF1010ZS IRF1010ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V


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    PDF 4652A IRF1010Z IRF1010ZS IRF1010ZL AN-994. O-220AB DM marking code irf 560 IRF1010Z IRF1010ZL IRF1010ZS

    AN-994

    Abstract: IRF1010EL IRF1010ES *f1010e
    Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


    Original
    PDF IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES *f1010e

    IRF1010Z

    Abstract: IRF1010ZL IRF1010ZS
    Text: PD - 95361 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


    Original
    PDF IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AN-994. O-220AB IRF1010Z IRF1010ZL IRF1010ZS

    IRF1010E

    Abstract: No abstract text available
    Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    PDF IRF1010E O-220 O-220AB IRF1010E

    AN-994

    Abstract: IRF1010EL IRF1010ES
    Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


    Original
    PDF IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1372A International IQ R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF101ONS • Low-profile through-hole(IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan
    PDF IRF101ONS) IRF101ONL)

    IRF1010E

    Abstract: No abstract text available
    Text: P D -9 .1 6 7 0 B International I R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 60 V R ü S o n = 0.0120 . ID = 81 A © Description Fifth G e n e ratio n H E X F E T s from International Rectifier


    OCR Scan
    PDF IRF1010E IRF1010E

    IRF1010E

    Abstract: *f1010e
    Text: P D - 9 .1670A International IGR Rectifier IRF1010E H E X FE T Pow er M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss - 6 0 V f^DS on = 0 . 0 1 2 0 lD = 81 A®


    OCR Scan
    PDF IRF1010E O-220 IRF1010E *f1010e

    IRF1010

    Abstract: to-22qab XGR719C 1789
    Text: TO-22QAB EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO O IRF1010 K a i 71 ge 17 ASSEMBLY LOT CODE PART NUMBER 89 DATE CODE YEAR 7 = 1997 WEEK 19 LINE C


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    PDF O-22QAB IRF1010 XGR719C to-22qab 1789

    IRF1010E

    Abstract: IOR 1010
    Text: International lö R Rectifier P D - 9 .1 6 7 0 IRF1010E PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss f^DS on = 60 V = 0.01 2Q. ID = 81 A Description


    OCR Scan
    PDF IRF1010E IRF1010E IOR 1010