1NA101
Abstract: S8890 APD S11519
Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.
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S11519
S8890
SE-171
KAPD1028E01
1NA101
APD S11519
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Untitled
Abstract: No abstract text available
Text: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically
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S11499
S11499-01)
KPIN1082E02
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Untitled
Abstract: No abstract text available
Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.
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S11519
S8890
SE-171
KAPD1028E01
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Untitled
Abstract: No abstract text available
Text: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has
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S11499
S11499-01)
SE-171
KPIN1082E01
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Photodiodes
Abstract: yag Electrical circuit S11499 TO-8 Package
Text: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has
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S11499
S11499-01)
SE-171
KPIN1082E01
Photodiodes
yag Electrical circuit
TO-8 Package
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22N19
Abstract: BC548c PHILIPS philips resistors philips crt Jinn TDA4882 48106 7 segment display 5612 AN9401 diagram tv Philips 14
Text: Application Note Improved Brightness Uniformity Ir. J.J. Hekker Product Concept & Application Laboratory Eindhoven, the Netherlands. Keywords Parabola generator Brightness uniformity Brightness decrease Contrast modulation Wide-screen Report No Date Pages
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ETV/AN94012
TDA4882)
22N19
BC548c PHILIPS
philips resistors
philips crt
Jinn
TDA4882
48106
7 segment display 5612
AN9401
diagram tv Philips 14
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Untitled
Abstract: No abstract text available
Text: Dat a Sh eet , DS 1, S ept . 20 00 SBCX-X S / T B u s I n t e r f a c e C ir c u i t E x t e n d e d PEB/PEF 3081 Version 1.3 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000-09-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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D-81541
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DIODE SMD S44
Abstract: TE 2161 motorola tic 122 C510 C768 ITS04492 MQFP44 TQFP48 uc 3081 IOM-2 Handler
Text: Dat a Sh eet , DS 1, S ept . 20 00 SBCX-X S / T B u s I n t e r f a c e C ir c u i t E x t e n d e d PEB/PEF 3081 Version 1.3 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000-09-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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D-81541
DIODE SMD S44
TE 2161 motorola
tic 122
C510
C768
ITS04492
MQFP44
TQFP48
uc 3081
IOM-2 Handler
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cp1h
Abstract: KMPDB0324EC
Text: IR-enhanced CCD image sensors S11510 series Enhanced near infrared sensitivity: QE=40% λ=1000 nm The S11510 series is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to
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S11510
S10420-01
KMPD1126E04
cp1h
KMPDB0324EC
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Untitled
Abstract: No abstract text available
Text: IR-enhanced CCD image sensors S11510 series Enhanced near infrared sensitivity: QE=40% λ=1000 nm The S11510 series is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to
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S11510
S10420-01
KMPD1126E04
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KMPDB0324EC
Abstract: S10420-01
Text: IR-enhanced CCD image sensors S11510 series Enhanced near infrared sensitivity: QE=40% λ=1000 nm The S11510 series is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a
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S11510
S10420-01
SE-171
KMPD1126E03
KMPDB0324EC
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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s10p40
Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge
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OD-123
S30S20PT
S30S30PT
S30S35PT
s10p40
C53l
SS34 sma
SS54 smb
K4 SOD
SK24 equivalent
SK34 smc
diode s14L
SSM14APT
SSM5819SLPT
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GaP photodiode APD
Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Text: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23
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S1087.
S1087-01
G1115
G1116
G1117
G1118
G1120
G1126-02.
S6801-01
S6926.
GaP photodiode APD
uv photodiode, GaP
GaP photodiode PIN
S-4036
UV photodiode
PIN Photodiode
S3590
GaP photodiode
schottky photodiode
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S1133-02
Abstract: S1133-11 S1133-03 S2216 02 S2164 S1190 hamamatsu S1087 Hamamatsu S1087 light S2357 Hamamatsu S1133
Text: HAMAMATSU Silicon CORP 1TE D • 42SU0*! 00 DE S 2t . 5 ■ 'p*|-S\ P h O tO d lO d e S Visible Light/Visible Light to IR Photometry Photosensitive surface Spectral Response Outlines Type No. Features S1087-01 For visible light to near IR S1087 For visible light
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42SU0*
S1087-01
S1087
S1087-03
S2164
S2164-01
S2357
S1133-01
S1133-11
S1133
S1133-02
S1133-03
S2216 02
S1190 hamamatsu
Hamamatsu S1087 light
Hamamatsu S1133
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54S38
Abstract: SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A
Text: m - G EN ER A L IN F O R M A TIO N INDEXES Numerical • Functional/Selection Guide O R D E R IN G INSTRUCTIO NS A N D M E C H A N IC A L D ATA 1 1 5 4/74 F A M IL Y SSI C IR CU ITS 2 I 54/74 F A M IL Y M S I/LSI C IR C U ITS 3 S E R IE S 29000 S S I C IR C U IT S
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38510/M
D012510
D011520
D011510
54S38
SN74298
SN74265
54175
NES 1004 naval specification
74L95
Transistor AF 138
07802-1
SN7437
SN54LS195A
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Untitled
Abstract: No abstract text available
Text: Housing Model Nc. C ir c uits Q -•/1 hag D menstons mm<n. Standard type Retainer mountable 2 XAP-Q2Y-1 XARP-02V 3 XAP-Q3Y-1 XARP-03V 5.0 .197] 4 XAP-04V-1 X ARP-04V 7.5{ .295] 5 XAP-05V-1 XARP-05V 6 XAP-06V-1 XARP-06V 7 XAP-07V-1 XARP-07V F=sr=r S'j'd ir:
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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Untitled
Abstract: No abstract text available
Text: Si Photodiodes Visible/Visible to IR Range, for General Photometry Dimensional Active Effective Outline (P.48,49)/ Package Area Size Active Area Window Material (mm) (mm2) Type No. S1087 A/ 1.3X1.3 1.6 S1133 © /V 2.4X2.8 6.6 S 1087-01 ® /R 1.3X1.3
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S1087
S1133
S1133-01
S1133-14
S1787-04
S1787-08
S1787-12
S4011
S2833
S5493
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S2833-01
Abstract: S3407 S1087
Text: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional Outline Package (P.43-46)/ Window Material*1 (mm) Active Effective Area Size Active Area (mm) (mm2) (nm) 320 — 730 1.3X1.3 1.6 S1133 /v 2.4X2.8 6.6 S1 087-01 ® /R
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S2164
S1133
S2833
S5493
S5627
S4011-02
S2833-01
S4797-01
S3407-01
560nm
S3407
S1087
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LG color tv Circuit Diagram schematics
Abstract: texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243
Text: IN D EXES Alphanumeric • Functional/Selection Guide IN T E R C H A N G E A B ILIT Y GUIDE G E N E R A L INFORM ATION O RD ERIN G IN STRUCTIO N S AND M ECH A N ICA L D A TA 5 4 /7 4 FA M ILIE S OF CO M PATIBLE T T L C IR C U ITS 54/74 F A M IL Y SSI C IR C U ITS
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MIL-M-38510
38510/MACH
3186J
Z501201
Z012510
Z011510
D022110
D022130
D021110
D021130
LG color tv Circuit Diagram schematics
texas ttl
YJ 162A
Texas Instruments TTL integrated circuits catalog SN74180
AC digital voltmeter using 7107
Sii 9024
MC3123
sn74ls860
SN7490AJ
sn74243
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12x Infiniband
Abstract: No abstract text available
Text: B D H M2.5X0.45 G1S 1- -M 2.5X 0.45 • S2 16:10-25 / \ S47 ■ S48 G25 Screw ■ W IR IN G D IA G R A M 12X -12X Plug 1 Plug 2 W IR IN G D IA G R A M 12X -12X Plug 1 P lug 2 P in N um ber Pin N um ber Pin N um ber P in N um ber G 1 -G 2 5 G 1 -G 2 5 G 1 -G 2 5
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12X-12X
G1-G25
G1-G25
S17-S32
S32-S17
26AWG
5000mm
12x Infiniband
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30AWG
Abstract: No abstract text available
Text: B H M2.5X0.45 G1S 1- -M 2.5X 0.45 • S2 1 6i0 .25 / \ ■ S48 G25 S47 Screw ■ W IR IN G D IA G R A M 12X -12X Plug 1 P lug 2 W IR IN G D IA G R A M 12X -12X Plug 1 P lug 2 Pin N um ber P in N um ber Pin N u m b er Pin N um ber G 1 -G 2 5 G 1 -G 2 5 G 1 -G 2 5
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12X-12X
G1-G25
G1-G25
S17-S32
S32-S17
30AWG
R-ZC-01512X-S1
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TO8c
Abstract: No abstract text available
Text: — -rJ'k ^onuonn 2/99 ‘ COMPONENTS / Ir AC281 AC282 10 TO 250 M H z TO-8 C ASC AD AB LE A M P LIFIER S Typical Values Low Noise Figure. High Gain. High Output L evel.
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AC281
AC282
AC281
AC281/AC282
AC282
TO8c
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