TGA4816
Abstract: No abstract text available
Text: TGA4816 10Gb/s Differential TIA Key Features and Performance • Preliminary Measured Performance • • • • • • • • Bias Conditions: VPOS=3.3V, IPOS=60mA 1500Ω Single-Ended Transimpedance >10GHz 3dB Bandwidth 1.6mApp Maximum Input Current 8pA/ √Hz Input Noise Current
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TGA4816
10Gb/s
10GHz
OC-192/STM-64
TGA4816
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ipos 150
Abstract: TGA4816 Photodiode, 10ghz
Text: Advance Product Information December 19, 2006 10Gb/s Differential TIA TGA4816 Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 66 -3 Differential TZ
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10Gb/s
TGA4816
10GHz
ipos 150
TGA4816
Photodiode, 10ghz
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Untitled
Abstract: No abstract text available
Text: Advance Product Information November 16, 2004 10Gb/s Differential TIA TGA4816-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 66 -3 Differential TZ
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10Gb/s
TGA4816-EPU
10GHz
OC-192/STM-64
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Untitled
Abstract: No abstract text available
Text: Advance Product Information August 27, 2003 10Gb/s Differential TIA TGA4816-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 66 -3 Differential TZ
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10Gb/s
TGA4816-EPU
10GHz
OC-192/STM-64
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TGA4815-EPU
Abstract: No abstract text available
Text: Advance Product Information January 16, 2004 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ
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10Gb/s
TGA4815-EPU
10GHz
TGA4815-EPU
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Untitled
Abstract: No abstract text available
Text: Advance Product Information September 23, 2003 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ
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10Gb/s
TGA4815-EPU
10GHz
OC-192/STM-64
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TGA4815
Abstract: TRANSIMPEDANCE mmic
Text: Product Data Sheet August 5, 2008 10Gb/s Differential TIA TGA4815 Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ Non-Inverting Output
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10Gb/s
TGA4815
10GHz
TGA4815
TRANSIMPEDANCE mmic
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Untitled
Abstract: No abstract text available
Text: Advance Product Information November 16, 2004 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ
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10Gb/s
TGA4815-EPU
10GHz
OC-192/STM-64
-15cient
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Untitled
Abstract: No abstract text available
Text: Advance Product Information August 27, 2003 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ
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10Gb/s
TGA4815-EPU
10GHz
OC-192/STM-64
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TGA4816-EPU
Abstract: ipos 150
Text: Advance Product Information January 16, 2004 10Gb/s Differential TIA TGA4816-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 66 -3 Differential TZ
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10Gb/s
TGA4816-EPU
10GHz
TGA4816-EPU
ipos 150
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LT1262
Abstract: ipos 150 1.8 c13 INEG ipos 150 LT1575 LT1577 VN2222L
Text: LT1575/LT1577 Ultrafast Transient Response, Low Dropout Regulators Adjustable and Fixed U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ UltraFastTM Transient Response Eliminates Tantalum and Electrolytic Output Capacitors FET RDS ON Defines Dropout Voltage
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LT1575/LT1577
1575/LT1577
LTC1553L
LT1573
LT1580
LT1585-1
15757f
LT1262
ipos 150 1.8 c13
INEG
ipos 150
LT1575
LT1577
VN2222L
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LT1262
Abstract: No abstract text available
Text: LT1575/LT1577 Ultrafast Transient Response, Low Dropout Regulators Adjustable and Fixed U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ UltraFastTM Transient Response Eliminates Tantalum and Electrolytic Output Capacitors FET RDS ON Defines Dropout Voltage
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LT1575/LT1577
1575/LT1577
LTC1553L
LT1573
LT1580
LT1585-1
15757f
LT1262
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ipos 150
Abstract: pin diagram of MOSFET 5040 intel core i3 MOTHERBOARD CIRCUIT diagram LT1585-1 INEG LT1575 LT1577 VN2222L NTHS-1206
Text: Final Electrical Specifications LT1575/LT1577 Ultrafast Transient Response, Low Dropout Regulators Adjustable and Fixed U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ UltraFastTM Transient Response Eliminates Tantalum and Electrolytic Output Capacitors FET RDS ON Defines Dropout Voltage
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LT1575/LT1577
1575/LT1577
LTC1435
LTC1552
LT1580
LT1585-1
ipos 150
pin diagram of MOSFET 5040
intel core i3 MOTHERBOARD CIRCUIT diagram
INEG
LT1575
LT1577
VN2222L
NTHS-1206
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ipos 150
Abstract: rc 3150 3150 mosfet ipos 150 1.8 INEG EEFUE0E221R LT3150 LT3150CGN MBR0520L Si4410
Text: Final Electrical Specifications LT3150 Fast Transient Response, Low Input Voltage, Very Low Dropout Linear Regulator Controller August 2002 DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Fast Transient Response Optimized with Ceramic Output Capacitors
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LT3150
16-Lead
T0220-5,
OT-223,
LTC3411
LTC3412
TSSOP16E
3150i
ipos 150
rc 3150
3150 mosfet
ipos 150 1.8
INEG
EEFUE0E221R
LT3150
LT3150CGN
MBR0520L
Si4410
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low voltage mosfet switch 3 amp
Abstract: LQLB2016T100M 3150 mosfet LQLB2016T100 ipos 150 LQH32CN100K23K ipos 150 1.8 200 Ampere pmosfet power transistor 3150F 1N4148 75V 150mA Diodes
Text: LT3150 Fast Transient Response, Low Input Voltage, Very Low Dropout Linear Regulator Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 3150 drives a low cost external N-channel MOSFET as a source follower to produce a fast transient response,
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LT3150
300mV
T0220-5,
OT-223,
LTC3411
LTC3412
TSSOP16E
3150f
low voltage mosfet switch 3 amp
LQLB2016T100M
3150 mosfet
LQLB2016T100
ipos 150
LQH32CN100K23K
ipos 150 1.8
200 Ampere pmosfet power transistor
3150F
1N4148 75V 150mA Diodes
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Untitled
Abstract: No abstract text available
Text: M MCP18480 -48V Hot Swap Controller Features Description • Allows safe board removal and insertion from a live backplane • Accurate <1.5% internal voltage reference for fault detection and precision timing • Programmable foldback current limiting • Programmable circuit breaker current limiting
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MCP18480
MCP18480
DK-2750
D-85737
DS20091B-page
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LDO regulator 51A
Abstract: MOSFET vn2222l
Text: LT3150 Fast Transient Response, Low Input Voltage, Very Low Dropout Linear Regulator Controller FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 3150 drives a low cost external N-channel MOSFET as a source follower to produce a fast transient response,
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LT3150
300mV
T0220-5,
OT-223,
LTC3411
LTC3412
TSSOP16E
3150f
LDO regulator 51A
MOSFET vn2222l
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ipos 150
Abstract: ipos 150 1.8 AMS2115 AMS2115P 2115X
Text: Advanced Monolithic Systems AMS2115 FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Fast Transient Response • Dropout Voltage Defined by FET Used • Very Tight Load Regulation • High Side Sense Current Limit • Microprocessor Supplies
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AMS2115
AMS2115
254mm)
ipos 150
ipos 150 1.8
AMS2115P
2115X
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MA020
Abstract: MA021 MD022C MD012A MD014B
Text: MCP18480 -48V Hot Swap Controller Features Description • Allows safe board removal and insertion from a live backplane • Accurate <1.5% internal voltage reference for fault detection and precision timing • Programmable foldback current limiting • Programmable circuit breaker current limiting
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MCP18480
MCP18480
current778-366
DS20091C-page
MA020
MA021
MD022C
MD012A
MD014B
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md012a
Abstract: MA03-2 transorb MD001A MA032 MA04-2 ipos korea MA011 MCP18480 MD001
Text: M MCP18480 -48V Hot Swap Controller Features Description • Allows safe board removal and insertion from a live backplane • Accurate <1.5% internal voltage reference for fault detection and precision timing • Programmable foldback current limiting • Programmable circuit breaker current limiting
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MCP18480
MCP18480
DK-2750
D-85737
DS20091B-page
md012a
MA03-2
transorb
MD001A
MA032
MA04-2
ipos korea
MA011
MD001
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1239AS
Abstract: 1239AS-H-4R7M 1239AS-H AGND56 qfn-12 3X3
Text: TPS65133 www.ti.com SLVSC01 – JUNE 2013 ±5 V, 250 mA Dual Output Power Supply FEATURES DESCRIPTION • • The TPS65133 is designed to drive LCD displays requiring a positive and negative supply rail. It may also be used as a general ±5 V supply for operational
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TPS65133
SLVSC01
TPS65133
1239AS
1239AS-H-4R7M
1239AS-H
AGND56
qfn-12 3X3
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Untitled
Abstract: No abstract text available
Text: AMS2115 FAST TRANSIENT RESPONSE LDO CONTROLLER General Description Features The AMS2115 is a single IC controller that drives an external N Channel MOSFET as a source follower to produce a fast transient response, low dropout voltage regulator. The fast transient load
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AMS2115
AMS2115
Si4160
LMK212BJ226MG-T
007TR
CRCW0603xxKxFKEA
CRCW060310K0FKEA
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smartphone
Abstract: No abstract text available
Text: TPS65132 www.ti.com SLVSBM1A – JUNE 2013 – REVISED AUGUST 2013 Dual Output LCD Bias for Smartphones and Tablets Check for Samples: TPS65132 FEATURES 1 • • • • • • • • • SIMO Single-Inductor Multiple-Output Regulator Technology >85% Efficiency at IOUT > 10mA
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TPS65132
1000x
smartphone
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PA6-GB20
Abstract: gf10 connector GT280 PA6 equivalent GT 12 AR gf10 gb20 GT 13 AR PA6-GB20-GF10 PA6-GB20GF10 1451 er
Text: 12 A 11 10 8 7 POS H 2 = i 1 = AMOUNT PART-NO. ANZAHL 15426010 MATERIAL WERKSTOFF 1 15326056 PA6 GB20 GF10 H BK 15326058 PA6 GB20 GF10 H VT 15326913 SILICON BL NOTES BEMERKUNG DELIVERY IPOS. 1-3 ASSEMBLED LIEFERZUSTAND POS. 1-3 VORMONTIERT I ONLY ASSY PARTS AVAILABLE
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OCR Scan
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PDF
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11DEO1
11DE01
PA6-GB20
gf10 connector
GT280
PA6 equivalent
GT 12 AR
gf10 gb20
GT 13 AR
PA6-GB20-GF10
PA6-GB20GF10
1451 er
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