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    IPI80N04S3-H4 Price and Stock

    Infineon Technologies AG IPI80N04S3H4

    OPTIMOS-T POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    ComSIT USA IPI80N04S3H4 100
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    IPI80N04S3-H4 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPI80N04S3-H4 Infineon Technologies Single: N-Channel 40V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 4.8 mOhm; ID (max): 80.0 A; RthJC (max): 1.3 K/W; Original PDF
    IPI80N04S3H4AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 80A TO262-3 Original PDF