IPD50N06S4L-12 Search Results
IPD50N06S4L-12 Price and Stock
Infineon Technologies AG IPD50N06S4L12ATMA2MOSFET N-CH 60V 50A TO252-31 |
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IPD50N06S4L12ATMA2 | Digi-Reel | 16,218 | 1 |
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IPD50N06S4L12ATMA2 | Reel | 12 Weeks | 2,500 |
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IPD50N06S4L12ATMA2 | 5,048 |
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IPD50N06S4L12ATMA2 | 35,777 | 891 |
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IPD50N06S4L12ATMA2 | 5,000 | 12 Weeks | 2,500 |
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IPD50N06S4L12ATMA2 | Cut Tape | 3,998 | 5 |
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IPD50N06S4L12ATMA2 | 41,450 | 1 |
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IPD50N06S4L12ATMA2 | 2,088 | 1 |
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IPD50N06S4L12ATMA2 | Cut Tape | 2,490 |
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IPD50N06S4L12ATMA2 | 13 Weeks | 2,500 |
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IPD50N06S4L12ATMA2 | 30,000 |
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Infineon Technologies AG IPD50N06S4L12ATMA1MOSFET N-CH 60V 50A TO252-3-11 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD50N06S4L12ATMA1 | Reel |
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IPD50N06S4L12ATMA1 | 251 | 1 |
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Infineon Technologies AG IPD50N06S4L-12POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD50N06S4L-12 | 2,035 |
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IPD50N06S4L-12 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPD50N06S4L-12 |
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Single: N-Channel 60V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 12.0 mOhm; ID (max): 50.0 A; RthJC (max): 3.0 K/W; | Original | |||
IPD50N06S4L12ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 50A TO252-3-11 | Original | |||
IPD50N06S4L12ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 50A TO252-3 | Original |