IPB035N08N3G Search Results
IPB035N08N3G Price and Stock
Infineon Technologies AG IPB035N08N3GATMA1MOSFET N-CH 80V 100A D2PAK |
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IPB035N08N3GATMA1 | Cut Tape | 1,872 | 1 |
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IPB035N08N3GATMA1 | Ammo Pack | 19 Weeks | 1 |
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IPB035N08N3GATMA1 | 555 |
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IPB035N08N3GATMA1 | 2,000 | 1,000 |
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IPB035N08N3GATMA1 | Cut Tape | 50 | 1 |
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IPB035N08N3GATMA1 | 17 Weeks | 1,000 |
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Infineon Technologies AG IPB035N08N3GXTTrans MOSFET N-CH 80V 100A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB035N08N3GATMA1) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB035N08N3GXT | Reel | 16 Weeks | 1,000 |
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Infineon Technologies AG IPB035N08N3GPOWER FIELD-EFFECT TRANSISTOR, 100A I(D), 80V, 0.0035OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB035N08N3G | 744 |
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IPB035N08N3G | 756 |
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IPB035N08N3G Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB035N08N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 80.0 V; RDS (on) (max) (@10V): 3.5 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; | Original | |||
IPB035N08N3GATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 100A TO263-3 | Original |
IPB035N08N3G Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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Original |