Untitled
Abstract: No abstract text available
Text: PD-91348B International I ö r Rectifier • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated IRL530N HEXFET Power MOSFET VDSS = 100V R ü S o n =
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Untitled
Abstract: No abstract text available
Text: International IQR Rectifier pd-mwo > preliminary IRL6903S HEXFET Power M O SFET • Logic-Levei Gate Drive • Advanced Process Technology • Surface Mount • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -30V R D S on = 0 .0 1 1Q Id = -91 A
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IRL6903S
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Untitled
Abstract: No abstract text available
Text: P D - 9.1275 International [ïô i Rectifier IRL2310 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDs on Specified at VGS= 4.5V & 10V 175°C Operating Temperature
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IRL2310
Liguria49
5S452
GG22331
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251f
Abstract: hexfet power mosfets international rectifier UJ 78A DIODE marking CJSS IOR9246 IRF1010 IRL1004
Text: PD - 91702B International IGR Rectifier IRL1004 HEXFET Power MOSFET • • • • • • • Logic-Level G ate Drive A dvanced Process Technology Ultra Low O n-R esistance Dynam ic dv/dt Rating 175 °C O perating Tem perature Fast Switching Fully Avalanche Rated
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O-220
251f
hexfet power mosfets international rectifier
UJ 78A
DIODE marking CJSS
IOR9246
IRF1010
IRL1004
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IRF34N
Abstract: 1RFZ34N 1RFZ34 dioda rectifier IRFZ34N V145M 100MS IRF1010 VIQR9246 dioda 12B
Text: PD-9.1278A • I If c W I 1 1 U V I V 1 i d l llORlRectifier PRELIMINARY _ IRFZ34 N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling V dss
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IRFZ34N
O-220
a9246
IRF34N
1RFZ34N
1RFZ34
dioda rectifier
V145M
100MS
IRF1010
VIQR9246
dioda 12B
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f1010
Abstract: D0247 IRFZ34N 2D 1002 diode for irfz34n f1010 IR T6A marking M6SS IRFZ34N MOSFET
Text: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY H EXFET Power M O S F E T • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Vdss = 55V
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O-220
00E473b
f1010
D0247
IRFZ34N
2D 1002 diode
for irfz34n
f1010 IR
T6A marking
M6SS
IRFZ34N MOSFET
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IRF1010E
Abstract: IOR 1010
Text: International lö R Rectifier P D - 9 .1 6 7 0 IRF1010E PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss f^DS on = 60 V = 0.01 2Q. ID = 81 A Description
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IRF1010E
IRF1010E
IOR 1010
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RF1010
Abstract: diode body marking A 4
Text: P D - 9.1477 International XâR Rectifier IRF3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs R DS on Description Id = 150V
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IRF3415
O-220
RF1010
diode body marking A 4
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Untitled
Abstract: No abstract text available
Text: PD 9.1608C International IG R Rectifier IR L 3 1 0 3 D 1 FETKY MOSFET & SCHOTTKY RECTIFIER Copackaged H EX FE T Power M O SFET Vdss= 30V and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application
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1608C
O-220
4AS5455
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Untitled
Abstract: No abstract text available
Text: PD - 9.1697A International IQR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V RüS on = 0.01 £2 lD = 85A Description These HEXFET Power MOSFETs were designed
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IRL3402
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Untitled
Abstract: No abstract text available
Text: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling V dss = 55V RDS on = 0.040Q
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1276B
IRFZ34N
O-220
002473b
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irl3705n
Abstract: T3A marking hp ds 870 CJ 53B
Text: International I R Rectifier ro-9.1370* IRL3705N preliminary HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V
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IRL3705N
O-220
Q2553E
T3A marking
hp ds 870
CJ 53B
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