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    INTERNATIONAL RECTIFIER HEXFET 1984 Search Results

    INTERNATIONAL RECTIFIER HEXFET 1984 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10119849-003LF Amphenol Communications Solutions HPCE R/A REC 24P12S Visit Amphenol Communications Solutions
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    iW673-01 Renesas Electronics Corporation Digital Green-Mode Synchronous Rectifier Controller Visit Renesas Electronics Corporation
    iW673-10 Renesas Electronics Corporation Digital Green-Mode Synchronous Rectifier Controller Visit Renesas Electronics Corporation
    iW673-20 Renesas Electronics Corporation Digital Green-Mode Synchronous Rectifier Controller Visit Renesas Electronics Corporation

    INTERNATIONAL RECTIFIER HEXFET 1984 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    TSSOP8 Package

    Abstract: international rectifier power mosfets catalog mosfet catalog international rectifier
    Text: PD-96020A IRF7754PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V


    Original     		PDF PD-96020A IRF7754PbF IRF7754TRPBF 23-Jun-2011 TSSOP8 Package international rectifier power mosfets catalog mosfet catalog international rectifier

    Untitled

    Abstract: No abstract text available
    Text: PD- 96152A IRF7754GPbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V


    Original     		PDF 6152A IRF7754GPbF IRF7754GTRPBF 31-May-2011

    vogt 545 13 084 00

    Abstract: 503 20 010 10 vogt vogt 545 23 194 00 vogt 545 13 084 503 10 010 00 vogt VOGT 545 29 008 00 vogt 545 24 027 00 vogt 428 027 VOGT 503 20 010 10 VOGT 503 05 010 30
    Text: IR I n t e r n a t i o n a l R e c t i f annual report 96 i e r About the Company International Rectifier’s power semiconductor technology makes electricity better fuel and allows the Company to play a fundamental role in the future of the world’s economies.


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    IRF 544 N MOSFET

    Abstract: IRF 9234 mosfet irf 648 pioneer mosfet ic 007 vogt 543 02 010 00 vogt 543 80 008 00 IRF p 536 MOSFET vogt 428 027 rectificadores 504 13 005 00 vogt
    Text: I n t e r n a t i o n a l 50th R e c t i f i e r A n n u a l 1 9 9 7 R e p o r t F i n a n c i a l H i g h l i g h t s International Rectifier Corporation & Subsidiaries t h e C o m p a n y International Rectifier technology makes electricity better fuel and allows the Company to play a


    Original     		PDF S-163 IRF 544 N MOSFET IRF 9234 mosfet irf 648 pioneer mosfet ic 007 vogt 543 02 010 00 vogt 543 80 008 00 IRF p 536 MOSFET vogt 428 027 rectificadores 504 13 005 00 vogt

    EIA-541

    Abstract: IRF7702 IRF7754
    Text: PD - 94224 IRF7754 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V -3.9A


    Original     		PDF IRF7754 MO-153AA) EIA-481 EIA-541. EIA-541 IRF7702 IRF7754

    Untitled

    Abstract: No abstract text available
    Text: PD-96020 IRF7754PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V


    Original     		PDF PD-96020 IRF7754PbF

    Untitled

    Abstract: No abstract text available
    Text: PD- 96152 IRF7754GPbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V


    Original     		PDF IRF7754GPbF F7754G

    Untitled

    Abstract: No abstract text available
    Text: PD-96020A IRF7754PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V


    Original     		PDF PD-96020A IRF7754PbF

    Untitled

    Abstract: No abstract text available
    Text: PD- 96152A IRF7754GPbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V


    Original     		PDF 6152A IRF7754GPbF

    Sharp amplifier SM30

    Abstract: Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE
    Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options TM October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power


    Original     		PDF -55oC 175oC. Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE

    n mosfet depletion pspice model parameters

    Abstract: NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets
    Text: Harris Semiconductor No. AN9210 Harris Power MOSFETs February 1992 A NEW PSPICE SUBCIRCUIT FOR THE POWER MOSFET FEATURING GLOBAL TEMPERATURE OPTIONS Author: William J. Hepp - Harris Semiconductor - Mountaintop PA C. Frank Wheatley Jr. - SM, IEEE - Consultant


    Original     		PDF AN9210 ED-17 n mosfet depletion pspice model parameters NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets

    Spice 2 computer models for hexfets

    Abstract: pspice high frequency mosfet n mosfet depletion pspice model parameters RFH75N05 datasheet Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs an8610 RFH75N05 SM30 AN1043 Spice Model for TMOS Power MOSFETs
    Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power


    Original     		PDF -55oC 175oC. Spice 2 computer models for hexfets pspice high frequency mosfet n mosfet depletion pspice model parameters RFH75N05 datasheet Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs an8610 RFH75N05 SM30 AN1043 Spice Model for TMOS Power MOSFETs

    Spice 2 computer models for hexfets

    Abstract: Spice Model for TMOS Power MOSFETs RFH75N05 datasheet Sharp amplifier SM30 NMOS depletion pspice model RFH75N05 Malouyans AN75 AN1043 Spice Model for TMOS Power MOSFETs SM30
    Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract /Title AN75 0 Subect A ew spice ubciruit or he ower OSET eaturng lobal emeraure ption ) Autho () Keyords Interil orpoation, emionuctor accepted by users, and the ease of parameter extraction


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    IRF 9234

    Abstract: major project IRF p 536 MOSFET mercedes collmer igbt MOSFET IRF 713 PD-2000-1
    Text: I n t e r n at i o n a l R e c t i f i e r A n n ua l R e p o r t 1 9 9 8 “International Rectifier pioneered and leads the world in a multi-billion-dollar semiconductor category that grows faster than ICs.” about the c o m p a n y O ur technology makes electricity better


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    VOGT 406 69

    Abstract: vogt 545 23 194 00 IRF 9234 rectificadores VOGT 504 07 005 00 vogt 406 47 vogt 543 VOGT 545 29 008 00 VOGT 545 64 009 VOGT 573
    Text: I N T E R N AT I O N A L R E C T I F I E R ANNUAL REPORT 2000 I N T E R N AT I O N A L R E C T I F I E R . THE POWER TO MAKE THINGS HAPPEN. INTERNATIONAL RECTIFIER ANNUAL REPORT 2000 COMPANY PROFILE International Rectifier is a world leader in power management, a technology


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    variable frequency drive circuit diagram

    Abstract: pwm variable frequency drive circuit diagram power inverter schematic diagram ir2110 Full-bridge IR2110 mospower applications handbook The MOSFET Turn-Off Device - A New Circuit Building Block IR2110 application note ir2110 with calculations for inverter analog switch circuit using mosfet full bridge ir2110
    Text: Design And Application Guide for High Speed MOSFET Gate Drive Circuits By Laszlo Balogh ABSTRACT The main purpose of this paper is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering


    Original     		PDF

    mospower applications handbook

    Abstract: ASC capacitor Rudy Severns siliconix handbook SERVICE MANUAL lg r500 FPS-4N inverter lg ig drive p1 "mospower applications handbook" 47R16 20MHZ
    Text: DIRECTED ENERGY, INC. APPLICATION NOTE GATE DRIVER DESIGN For Switch-Mode Applications and the DE-SERIES MOSFET TRANSISTOR George J. Krausse, Directed Energy, Inc. Abstract This application note discusses the gate driver design pattern philosophies that are essential in maximizing the performance of the DESERIES MOSFET in both switching speed and frequency for switch mode


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    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    WE-748351124

    Abstract: NA5TR1 nanoLOC TRX Transceiver user guide TRANSISTOR SMD 2X K nanoloc capacitor 0402 X7R 100NF 50V 10 diagram receiver and transmitter 2.4 Ghz for car SMD transistor 2x sot 23 W82110T3825 Resistors 2322 Phycomp
    Text: nanoLOC TRX Transceiver NA5TR1 Datasheet Version 1.02 NA-06-0230-0388-1.02 This document contains information on a pre-engineering chip. Specifications and information herein are subject to change without notice. Document Information nanoLOC TRX Transceiver (NA5TR1) Datasheet


    Original     		PDF NA-06-0230-0388-1 WE-748351124 NA5TR1 nanoLOC TRX Transceiver user guide TRANSISTOR SMD 2X K nanoloc capacitor 0402 X7R 100NF 50V 10 diagram receiver and transmitter 2.4 Ghz for car SMD transistor 2x sot 23 W82110T3825 Resistors 2322 Phycomp

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    1RF130

    Abstract: AN-976 IRF142 IRF330 IRF350 IRF430 IRF440 what is THERMAL RUNAWAY IN RECTIFIER MOSFET INTERNATIONAL RECTIFIER hexfet 1984 IRF350 and its equivalent
    Text: IN T E R N A T IO N A L R E C T IF IE R I I O R I POWER m o set /ippuCW ION NOIES P U B L I S H E D BY I N T E R N A T I O N A L R E C T IF IE R , 2 3 3 K A N S A S STHfcfcT, F L S E G U N D O , C A 9 0 2 4 5 . 2 1 3 7 7 2 - 2 0 0 0 AN-976 Understanding and Using Power


    OCR Scan     		PDF AN-976 987-M10 91034B-6291. 9521S 1RF130 AN-976 IRF142 IRF330 IRF350 IRF430 IRF440 what is THERMAL RUNAWAY IN RECTIFIER MOSFET INTERNATIONAL RECTIFIER hexfet 1984 IRF350 and its equivalent

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE 955 Protecting Power MOSFETs from ESD by S T E V E B R O W N an d B O B G H E N T , A p p i ic a tio n s E n g in e e rin g D e p a rtm e n t W ARNING! S T A T IC S E N S IT IV E D E V IC E S M ost pow er M O S F E T users are very familiar with this warning. The


    OCR Scan     		PDF ASQ-100TM 22-2SW, AN-955

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719