Untitled
Abstract: No abstract text available
Text: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on
|
Original
|
PDF
|
S11500-1007
S11500-1007
S7030-1007)
KMPD1125E05
|
S11500-1007
Abstract: CCD area sensor 2.2 black white
Text: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on the
|
Original
|
PDF
|
S11500-1007
S11500-1007
S7030-1007)
SE-171
KMPD1125E04
CCD area sensor 2.2 black white
|
CCD area sensor 2.2 black white
Abstract: mems Infrared light source
Text: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on
|
Original
|
PDF
|
S11500-1007
S11500-1007
S7030-1007)
KMPD1125E05
CCD area sensor 2.2 black white
mems Infrared light source
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
|
Original
|
PDF
|
S8844-0909
S8844-0909
SE-171
KMPD1056E02
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
|
Original
|
PDF
|
S8844-0909
S8844-0909
SE-171
KMPD1056E04
|
S7171-0909
Abstract: S8844-0909
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
|
Original
|
PDF
|
S8844-0909
S8844-0909
SE-171
KMPD1056E02
S7171-0909
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
|
Original
|
PDF
|
S8844-0909
S8844-0909
SE-171
KMPD1056E03
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
|
Original
|
PDF
|
S8844-0909
S8844-0909
SE-171
KMPD1056E01
|
Untitled
Abstract: No abstract text available
Text: •SUPER INTENSITY INFRARED LED 92 4b7fll5fl D00242b S7b |>| Sensor ▼PACKAGE DIMENSIONS Unit : mm
|
OCR Scan
|
PDF
|
D00242b
|
MTD7030
Abstract: No abstract text available
Text: MARKTECH INTERNA TI ONA L 1ÖE D INFRARED LED r;qi-'n MTEllOO GaAs INFRARED EMITTER STTThSS 0QQ03ÔS H INFRARED LED FOR PHOTO SENSOR APPLICATIONS • R EM O T E C O N T R O L S Y S T E M • OPTICAL SW ITCH FEATURES 1. ANODE 2. CATHODE • Output spectrally compatible with silicon sensor
|
OCR Scan
|
PDF
|
00Q03Ã
MTD7030.
30mW/sr.
MTD7030
|
Untitled
Abstract: No abstract text available
Text: _ REFLECTIVE SWITCH -"73 MARKTECH INTERNATIONAL 1ÔE » • 571*^55 G0GD4S7 3 ■ MTRS9040 INFRARED LED & PHOTO TRANSISTOR APPLICATIONS HIGH SENSITIVE OPTICALLY REFLECTIVE SENSOR • OPTICAL SWITCH • TAPE EDGE SENSOR • COPIER PAPER SENSOR 3 4 2 1
|
OCR Scan
|
PDF
|
MTRS9040
00006CH
|
Untitled
Abstract: No abstract text available
Text: MARKTECH INTERNATIONAL IflE D • 57^55 G Q Q G 4 5 M fl ■ REFLECTIVE SWITCH MTRS9030 INFRARED LED & PHOTO DARLINGTON TRANSISTOR APPLICATIONS HIGH SENSITIVE OPTICALLY REFLECTIVE SENSOR . OPTICAL SW ITCH . TAPE EDGE SENSOR 3 . COPIER PAPER SENSOR 4 2 1 FEATURES
|
OCR Scan
|
PDF
|
GQQG45M
MTRS9030
00006CH
|
MTSS10050
Abstract: T-14
Text: MARKTECH INTERNATIONAL SLOTTED SWITCH IflE D S7Tìt.SS G G Q 0 M 4 4 S MTSS10050 INFRARED LED+ PHOTOIC APPLICATIONS • T IM IN G D ETECTION FOR PR IN TER S, TY P E W R IT E R S AND FACSIMILE FEATURES • Optical switch edge sensor. • Positioning and rotation sensor.
|
OCR Scan
|
PDF
|
GGQ0M44
MTSS10050
---Ta-25Â
-25-C
Ta-25
MTSS10050
T-14
|
C1019
Abstract: C1018 C1022 Quality Technologies C1018 5V C1017 C1020 C1023 photo darlington sensor reflective photo sensor
Text: ÖUALITY TECHNOLOGIE S CORP S7E » • 74t.tflSl QG03bll S ■ I QUALITY TECHNOLOGIES REFLECTIVE OBJECT SENSOR MSA7 OLD PART NO.— MCA7 PACKAGE DIMENSIONS DESCRIPTION PIN 1 IDENTIFICATION The M SA7 optoisolator consists of an infrared emitting diode and a silicon planar photodarlington. The on-axis
|
OCR Scan
|
PDF
|
74btiflSl
0003bl5
T-V/-73
C1019
C1018
C1022
Quality Technologies
C1018 5V
C1017
C1020
C1023
photo darlington sensor
reflective photo sensor
|
|
|
Untitled
Abstract: No abstract text available
Text: INFRARED LED MARKTECH INTERNATIONAL lflE D MTE2010 STTTtSS G00G3T3 3 + 5 » 0.2281 MAX. 44.7 +0.1 -0.1S (0.185 +0 004 •0.005 APPLICATIONS • OPTICAL SWITCH • TAPE, CARD READER • AUTOMOBILE POSITION SENSOR • PHOTO ISOLATOR FEATURES 2»+0.45 (0.018)
|
OCR Scan
|
PDF
|
MTE2010
G00G3T3
MTD6010A,
MTD6140.
00006CH
|
Untitled
Abstract: No abstract text available
Text: MARKTECH INTERNATIONAL IflE D S7TìbSS 000QM51 4 SLOTTED SWITCH MTSS8040 INFRARED LED+PHOTO TRANSISTOR _ii •“ • i APPLICATIONS ÍJQ • OPTICAL SWITCH • SHAFT POSITION AND VELOCITY SENSOR 1. 2. 3. 4. FEATURES • Both chips face each other across a 0.118 inch air gap.
|
OCR Scan
|
PDF
|
000QM51
MTSS8040
00006CH
|
MTD6010A
Abstract: MTD6140 MTE2010
Text: INFRARED LED MARKTECH INTERNATIONAL lflE D MTE2010 S7TTt.SS G 0 0 G 3 T 3 3 «8.» 0.22» MAX. 44.7 +0.1 -0.1S (0.185 +0 004 •0.005) APPLICATIONS • • • • OPTICAL SWITCH TAPE, CARD READER AUTOMOBILE POSITION SENSOR PHOTO ISOLATOR FEATURES 2»+0.45 (0.018)
|
OCR Scan
|
PDF
|
G0003T3
MTE2010
MTD6010A,
MTD6140.
lF-50
MTD6010A
MTD6140
MTE2010
|
Untitled
Abstract: No abstract text available
Text: marktech lflE D international 57^55 000035=1 1 INFRARED LED MTE2050 ' T - m ’-ii APPLICATIONS FEATURES • OPTICAL SWITCH • Output spectrally compatible with silicon sensor MTD6100. • High radiant power. • High radiant Intensity. MAXIMUM RATINGS [Ta 2,5°C
|
OCR Scan
|
PDF
|
MTE2050
MTD6100.
100Hz.
00006CH
|
Untitled
Abstract: No abstract text available
Text: MARKTECH INTERNATIONAL SLOTTED SWITCH IflE D S7Tìt.SS G G Q 0 M 4 4 S MTSS10050 INFRARED LED+ PHOTOIC APPLICATIONS • T IM IN G D E T E C T IO N F O R P R IN T E R S , T Y P E W R IT E R S A N D F A C S IM IL E FEATURES • Optical switch ed ge sensor. • Positioning and rotation sensor.
|
OCR Scan
|
PDF
|
MTSS10050
|
Untitled
Abstract: No abstract text available
Text: STTTbSS 0G0G424 T SLOTTED SWITCH 1ÛE D MARKTECH INTERNATIONAL MTSS8050 INFRARED LED+PHOTO TRANSISTOR • R s I J- APPLICATIONS •J t — • OPTICAL SWITCH • SHAFT POSITION AND VELOCITY SENSOR t • L l i J — -, , ■ FEATURES " TTp j RATING UNIT Forward Current
|
OCR Scan
|
PDF
|
0G0G424
MTSS8050
00006CH
|
Untitled
Abstract: No abstract text available
Text: GaAs Infrared E m itter TLN105B A p p lica tio n s • Remote Control System ' Smoke Sensor • Optical Switch Featu res • High Radiant Intensity : lE = 20mW / sr TYP. • Wide Radiation Pattern • Capable of Pulse Operation • Spectrally Com patible with TPS703 PIN Photo Diode
|
OCR Scan
|
PDF
|
TLN105B
TPS703
98-4LEDS
|
MTD6100
Abstract: MTE2050
Text: marktech international 1SE D 57^ 55 □ Q0D3flcl 1 INFRARED LED MTE2050 T U l ’- i i APPLICATIONS FEATURES • OPTIC A L SW ITCH • Output spectrally compatible with silicon sensor M T D 6100. • High radiant power. • High radiant Intensity. MAXIMUM RATINGS [Ta = 25°C
|
OCR Scan
|
PDF
|
MTE2050
MTD6100.
100Hz.
lp-50mA
ip-50mA
MTD6100
MTE2050
|
Untitled
Abstract: No abstract text available
Text: REFLECTIVE OBJECT SENSOR OPTOELECTRONICS OPB7Q6A/B/C PACKAGE DIMENSIONS — OPTICAL CENTERLINE — .083 2.11 - .240 (6.10) L — .173(4.39) P E S d H E IIU N The OPB706A/B/C reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic
|
OCR Scan
|
PDF
|
OPB706A/B/C
OPB706A/B/C.
OPB706A/B/C
|
3 mm slotted optical switch
Abstract: MTSS12000 110A01
Text: MARKTECH INTERNATIONAL MTSS12000 SLOTTED SWITCH 1ÖE D ST^bSS GQ0Q447 Q T-41-71 INFRARED LED+ PHOTO IC APPLICATIONS • T IM IN G DETECTION FO R PR IN TER S, TY P E W R IT ER S A N D FACSIMILE FEATURES • Optical switch edge sensor. • W ide detection width: 5mm.
|
OCR Scan
|
PDF
|
GQ0Q447
MTSS12000
Tm-73
3 mm slotted optical switch
MTSS12000
110A01
|
