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    INFRARED EMITTING CIRCUIT Search Results

    INFRARED EMITTING CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    Infrared-Human-Sensor Renesas Electronics Corporation Infrared Human Sensor Reference Design Visit Renesas Electronics Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    INFRARED EMITTING CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    infrared diode

    Abstract: TRANSISTOR C 2577 GL4800E0000F Infrared Emitting Diode Infrared Phototransistor infrared emitting CIRCUIT infrared infrared transistor GL527V INFRARED DIODES
    Text: Copyright 2005, Sharp Electronics Corp. All Rights Reserved. Chapter 3 – Use of Infrared Emitting Diodes 3-1 Chapter 3 – Use of Infrared Emitting Diodes 3-2 Chapter 3 – Use of Infrared Emitting Diodes 3-3 multiplied by n. Chapter 3 – Use of Infrared Emitting Diodes


    Original     		PDF

    infrared diode

    Abstract: GL1F20 IS1U20 serial vs parallel communication
    Text: GL1F20 GL1F20 Infrared Communication IrDA1.0 Compatible InfraredEmitting Diode • Features ■ Outline Dimensions 1. IrDA1.0 compatible infrared emitting diode (Transmission rate : 2.4 to 115.2kbps) (Unit : mm) 2.2 2. Built-in infrared emitting diode circuit


    Original     		PDF GL1F20 IS1U20) GL1F20) infrared diode GL1F20 IS1U20 serial vs parallel communication

    side view infrared diode sharp

    Abstract: GP2Y0A60 GP2Y10 GP2Y0A60SZ0F/GP2Y0A60SZLF GP2Y0AF15
    Text: INFRARED EMITTING DIODE LINEUP / INFRARED EMITTING DIODES OPTO • Infrared Emitting Diode Lineup Type Single-end lead Side view type Surface mount type Package Half intensity angle Features Epoxy resin with lens Epoxy resin with lens/ leadless General purpose/Narrow beam angle


    Original     		PDF GL480E00000F GL4800E0000F GL100MN0MP GL100MN1MP GL100MD1MP1 GP2Y0AH01K0Fâ GP2Y1010AU0F GP2Y1012AU0F GP2Y1023AU0F side view infrared diode sharp GP2Y0A60 GP2Y10 GP2Y0A60SZ0F/GP2Y0A60SZLF GP2Y0AF15

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm


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    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:


    Original     		PDF LN162S CTRLR102-001

    LN162S

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :


    Original     		PDF LN162S LN162S

    LN189S

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical


    Original     		PDF LN189S LN189S

    LN189L

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical


    Original     		PDF LN189L LN189L

    LN172

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.


    Original     		PDF LN172 10nductor LN172

    LN52

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm


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    GL1F20

    Abstract: GL1F201 IS1U20
    Text: GL1F20/GL1F201 Compliant GL1F20/GL1F201 IrDA1.0 Infrared Emitting Diode • Outline Dimensions ■ Features 1. Compliant with IrDA1.0 Date rate : 2.4k to 115.2kbps 2. Built-in infrared emitting diode circuit 3. Pair use with IS1U20 is recommended. (Unit : mm)


    Original     		PDF GL1F20/GL1F201 GL1F20/GL1F201 IS1U20 GL1F20 GL1F201

    Untitled

    Abstract: No abstract text available
    Text: HOA7720/7730 Series Connectorized Transmissive Optoschmitt Sensor DESCRIPTION The HOA7720/7730 Series consists of an infrared emitting The infrared emitting diode is biased internally, eliminating the diode facing an Optoschmitt detector encased in a black


    Original     		PDF HOA7720/7730 HOA7720-M11) HOA7730-M11) 006496-1-EN

    Untitled

    Abstract: No abstract text available
    Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.


    Original     		PDF AA3528F3S 2000pcs DSAL0863 SEP/01/20120863 SEP/01/2012

    AA3528F3S

    Abstract: smd diode f3
    Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.


    Original     		PDF AA3528F3S 1500pcs DSAL0863 SEP/06/2010 W2010 AA3528F3S smd diode f3

    AA3528F3S

    Abstract: No abstract text available
    Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.


    Original     		PDF AA3528F3S 1500pcs DSAL0863 APR/09/2011 AA3528F3S

    Untitled

    Abstract: No abstract text available
    Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.


    Original     		PDF AA3528F3S 1500pcs DSAL0863 APR/09/2011

    Untitled

    Abstract: No abstract text available
    Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.


    Original     		PDF AA3528F3S 2000pcs DSAL0863 MAR/02/2013

    LN184

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN184 Unit : mm , , 1.0 max. GaAlAs Infrared Light Emitting Diode 4.5±0.2 2.0 0.29 Light source for distance measuring systems ø4.6±0.15 Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.) Infrared light emission close to monochromatics light : λP = 880 nm


    Original     		PDF LN184 LN184

    LN69

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Emitted light spectrum suited for silicon photodetectors : λP = 940 nm typ. Good radiant power output linearity with respect to input current Long lifetime, high reliability


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    HE8811

    Abstract: No abstract text available
    Text: HE8811 ODE-208-051 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam


    Original     		PDF HE8811 ODE-208-051 HE8811 HE8811:

    LNA2601L

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8 For optical control systems Features High-power output, high-efficiency 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 Infrared light emission close to monochromatic light : λP = 950 nm


    Original     		PDF LNA2601L LNA2601L

    LN162S

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 3.5 mW (typ.)  Infrared light emission close to monochromatic light: λP = 950 nm (typ.)


    Original     		PDF 2002/95/EC) LN162S LN162S

    Untitled

    Abstract: No abstract text available
    Text: Infrared Emitting Diode Description The H E7601SG is a 770 nm band GaAIAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.


    OCR Scan     		PDF E7601SG HE7601SG: HE7601SG

    Infrared Phototransistor

    Abstract: TPOWER
    Text: Optoisolator Specifications 4N38, 4N38A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. These


    OCR Scan     		PDF 4N38A 4N38A E51868 0110b Infrared Phototransistor TPOWER