B78310
Abstract: B78310P1583A005 FIN0144-I FIN0145-Q FIN0151-R SIPB 20233 N198 MH323 epcos
Text: ISDN Transformers EF 16 AC/DC Converter B78310P1583A005 Application 24 max. • Matched to Infineon SIPB 20233 Features ■ According to EN 60950: FRAME5.5 16,4 max. 20 max. 4,4 max. Marking ■ Manufacturer, middle block of ordering code, date code Packing
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B78310P1583A005
FIN0144-I
04-01\ISDN
FIN0151-R
FIN0145-Q
B78310
B78310P1583A005
FIN0144-I
FIN0145-Q
FIN0151-R
SIPB 20233
N198
MH323
epcos
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Untitled
Abstract: No abstract text available
Text: Electronic Component Distributor. Source:Infineon Technologies P.N:BGA524N6E6327XTSA1 Desc:IC AMP SI-MMIC Web:http://www.hotenda.cn E-mail:[email protected] Phone: +86 075583794354 BGA524N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)
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BGA524N6E6327XTSA1
BGA524N6
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infineon marking L2
Abstract: BFR193L3
Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR193L3
infineon marking L2
BFR193L3
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BFR193L3
Abstract: BFR380L3 marking FC
Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description
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BFR380L3
BFR193L3
BFR380L3
marking FC
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Infineon Technologies transistor 4 ghz
Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFR340L3
Infineon Technologies transistor 4 ghz
BFR193L3
BFR340L3
BFR34* transistor
marking FA
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C5 MARKING TRANSISTOR
Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)
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BFR380L3
C5 MARKING TRANSISTOR
infineon marking code L1
Infineon Technologies transistor 4 ghz
BFR193L3
BFR380L3
INFINEON transistor marking
MARKING CODE 21E
infineon marking code L2
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Infineon Technologies transistor 4 ghz
Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description
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BFR193L3
Infineon Technologies transistor 4 ghz
BFR193L3
infineon marking code L2
1B marking transistor
INFINEON transistor marking
C5 MARKING TRANSISTOR
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BFR193L3
Abstract: BFR340L3 marking FA
Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR340L3
BFR193L3
BFR340L3
marking FA
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marking FC
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR380L3
marking FC
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Untitled
Abstract: No abstract text available
Text: BFR193L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR193L3
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LNA marking CODE R0
Abstract: No abstract text available
Text: BGA715N7 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 1.0, 2013-01-29 Preliminary RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG
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BGA715N7
LNA marking CODE R0
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MARKING SMD IC CODE
Abstract: Motorola transistor smd marking codes PSB 21493 Motorola semiconductor smd marking codes MARKING SMD IC CODE 10 pin PEB 22622 SOCRATES ef 16 transformer ic SMD MARKING CODE ad 5.9 PEF 22622 EPCOS B82793
Text: Inductors for Telecommunications Data Sheet Collection 2002 Inductors for Telecommunications The race on the digital information highway is already underway. Growing data traffic volumes are demanding increasingly higher transmission rates. And multimedia services, such as radio and television on the Internet, audio and video streaming, videoconferencing, video-on-demand, e-commerce, etc. require data speeds that far outstrip the rates used by analog technology. Only digital
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marking FA
Abstract: No abstract text available
Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340L3
marking FA
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Germanium Amplifier Circuit diagram
Abstract: BGA700L16
Text: P r e li m i n a r y D a t a S h e e t , R e v. 1 . 3 , M ar c h 2 00 7 B G A 7 00 L1 6 Dual-Band WLAN LNA S m a l l S i g n a l D i s c r et e s Edition 2007-03-19 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2007.
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BGA700L16
BGA700L16
TSLP-16
PG-TSLP-16-1
Germanium Amplifier Circuit diagram
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Untitled
Abstract: No abstract text available
Text: BCR401U LED Driver • Supplies stable bias current even at low battery voltage • Ideal for stabilizing bias current of LEDs 4 3 5 • Negative temperature coefficient protects 2 6 1 LEDs against thermal overload • Suitable for 12 V automotive applications
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BCR401U
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BCR401U
Abstract: BCW66H SC74
Text: BCR401U LED Driver • Supplies stable bias current even at low battery voltage • Ideal for stabilizing bias current of LEDs 4 3 5 • Negative temperature coefficient protects 2 6 1 LEDs against thermal overload • Suitable for 12 V automotive applications
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BCR401U
BCR401U
BCW66H
SC74
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SMD MARKING CODE f2
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
SMD MARKING CODE f2
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Untitled
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
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BFR360L3
Abstract: BFR193L3
Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFR360L3
BFR360L3
BFR193L3
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet, Rev.1.1, Jan. 2009 BGA461 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2009-01-22 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA461
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V05 SMD CODE MARKING
Abstract: TSLP-7-4 BGA461 sMD .v05 smd V05 transistor SMD .v05 smd marking code v05 INFINEON marking BGA c4 smd marking code marking pon
Text: Preliminary Data Sheet, Rev.1.1, Jan. 2009 BGA461 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2009-01-22 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA461
V05 SMD CODE MARKING
TSLP-7-4
BGA461
sMD .v05
smd V05
transistor SMD .v05
smd marking code v05
INFINEON marking BGA
c4 smd marking code
marking pon
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Untitled
Abstract: No abstract text available
Text: BGA725L6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS in ultra small package with 0.77mm² footprint Data Sheet Revision 2.0, 2012-03-09 Preliminary RF & Protection Devices Edition 2012-03-09 Published by Infineon Technologies AG
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BGA725L6
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TRANSISTOR MARKING NK
Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR949T
TRANSISTOR MARKING NK
BCR108T
BFR949T
SC75
SC79
SCD80
BFR94
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marking FA
Abstract: BFR340T
Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR340T
marking FA
BFR340T
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