T2D 95
Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
Text: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
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ML65244,
ML65245
ML65541
100pF
T2D 95
74FCT244D
T2D 70 diode
t2d diodes
SRAM 256KB 6ns
signal path designer
T2D 83 diode
transistor t2d
FCT541
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T2D 53
Abstract: transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65245 ML65541
Text: June 1996 Application Note 42 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
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ML65244,
ML65245
ML65541
100pF
T2D 53
transistor t2d
diode T2D
MIPS R4000
74FCT244D
T2D 83 diode
FCT541
ML65244
ML65541
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octal 548
Abstract: 5x2 connector header NX 38 HEADER 5X2 560pF T2D 87 diode t2d 68 chips t2d diode T2D T2D 26 diode
Text: LXD381 — Evaluation Board for Octal E1 Applications Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document LXD381 — Evaluation Board for Octal E1 Applications User Guide. Order Number: 249213-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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LXD381
560pF
TG-49-1505-NX
LXD381
octal 548
5x2 connector header
NX 38
HEADER 5X2
560pF
T2D 87 diode
t2d 68
chips t2d
diode T2D
T2D 26 diode
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T2d DIODE
Abstract: T2D DIODE 48 T2D 66 diode T2D DIODE 46 T2d 86 diode T2D DIODE 49 T2D 83 DIODE T2D 84 diode T2D 87 diode T2D DIODE 42
Text: 5 4 3 2 1 D D RP19 2.7k INIT DONE C20 22uF Vcc3v3 1 2 J16 + + 1 3 2 1 3 4 C17 0.1uF RP36 2.7k C102 C103 C104 C105 C106 C107 C108 C109 C110 C111 C112 C113 C114 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 2 1 PGM INIT
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384MHz
DESIGN\XRT86SH221\REV2\SCHEMATIC\T86SH
XRT86SH221
T2d DIODE
T2D DIODE 48
T2D 66 diode
T2D DIODE 46
T2d 86 diode
T2D DIODE 49
T2D 83 DIODE
T2D 84 diode
T2D 87 diode
T2D DIODE 42
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T2D DIODE
Abstract: T2D 70 diode T2D 40 DIODE T2D 65 DIODE diode T2D T2d 03 diode T2D 09 diode T2D 75 diode diode t2d 05 T2D DIODE 06
Text: S IEM EN S BA 389 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 1 GHz • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 389 yellow Q62702-A732 DO-35 DHD
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Q62702-A732
EHA070GI
DO-35
fl235bOS
f-100
fi53SbDS
00bb5b5
T2D DIODE
T2D 70 diode
T2D 40 DIODE
T2D 65 DIODE
diode T2D
T2d 03 diode
T2D 09 diode
T2D 75 diode
diode t2d 05
T2D DIODE 06
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T2D DIODE
Abstract: T2D 83 diode T2D DIODE 69 T2D 83 T2D 17 DIODE diode T2D T2D DIODE 60 T2D 51 DIODE T2D DIODE 94 T2D 94
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. i t Black Color Code E T T~ II SECTION X-X LEAD PROFILE FEA TU RES G ood optical to m echanical alignm ent
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940nm
T2D DIODE
T2D 83 diode
T2D DIODE 69
T2D 83
T2D 17 DIODE
diode T2D
T2D DIODE 60
T2D 51 DIODE
T2D DIODE 94
T2D 94
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westcode stud base diode SI 2
Abstract: 140ak
Text: TECHN IC AL WESTCODE SEMICONDUCTORS PUBLICATION D P40 IS S U E 1 March, 1ÖBO Stud-Base Silicon Rectifier Diodes Type PCN/PCR040 70amperes average: up to 1600 volts RATING S Maximum values at 175'5C Tj unless stated otherwise R A TIN G SVMBOL C O N D IT IO N S
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PCN/PCR040
70amperes
2Q49A5
s-2710
-B5rt175cC
westcode stud base diode SI 2
140ak
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T2D 22 diode
Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA
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BDT60
BDT60B
BDT61,
BDT61A,
BDT61B
BDT61C.
BDT60
T2D 22 diode
T2D 56 DIODE
T2D DIODE
diode t2d 05
T2D 70 diode
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T2D 85 diode
Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
Text: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V
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IRLS510A
O-220F
71b4m2
D3T23b
T2D 85 diode
T2D 65 DIODE
T2D DIODE
T2D 54 DIODE
T2D 8 diode
T2D DIODE 45
T2D 09 diode
23/ZENER DIODE t2d 54
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34B SOT
Abstract: NDT455N
Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
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NDT455N
NDT455N
OT-223
34B SOT
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T2D 24 DIODE
Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
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NDT455N
OT-223
NDT455N
OT-223
T2D 24 DIODE
T2d 43 diode
T2D 65 DIODE
T2d 61 diode
T2D DIODE 42
T2D DIODE 32
T2D 04 DIODE
diode T2D
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T2D 96 diode
Abstract: T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96
Text: SbE ]> • 7*^237 Q0MD1S5 [j^DÊKOitLllÊÎ^OKOQigS G y M54HC365/366 M74HC365/366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER 3-STATE HC365 NON-INVERTING - HC366 INVERTING PRELIMINARY DATA ■ HIGH SPEED tpD = 13 ns (Typ) at V<x = 5V ■ LOW POWER DISSIPATION
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M54HC365/366
M74HC365/366
HC365
HC366
HC365
M54/74HHARACTERISTICS
T2D 96 diode
T2D 78 diode
T2D 44 diode
t2d 76 diode value
T2D DIODE 29
T2D DIODE
T2D 36 DIODE
T2D 19 diode
T2D 53 DIODE
T2D DIODE 96
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UC1838
Abstract: No abstract text available
Text: UNITRODE CORP /UN ITRODE IC ^2» D I 'iaMflSl'J QGQ'l'IBS 3 • UNI LINEAR INTEGRATED CIRCUITS 7 ^ r v / '3 V UC1838 UC2838 UC3838 Magnetic Amplifier Controller F EA TU RES • Independent 1% Reference • Two U n com m itted, Identical O perational A m p lifie rs
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UC1838
UC2838
UC3838
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30PF
Abstract: DS3893A DS3893AV V20A
Text: DS3893A National Semiconductor DS3893A BTL TURBOTRANSCEIVER General Description The TURBOTRANSCEIVER is designed for use in very high speed bus systems. The bus terminal characteristics of the TURBOTRANSCEIVER are referred to as "Backplane Transceiver Logic” BTL . BTL is a new logic signaling stan
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DS3893A
TL/F/B69B-9
0Q740bl
30PF
DS3893AV
V20A
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T2D 85 diode
Abstract: FBC 320 T2D 1 DIODE T2D 24 DIODE T2D 04 DIODE IN T2D DIODE T2D 09 diode
Text: MP7628 -A ^ L Quad Multiplying 8-Bit Digital-to-Analoc Converter Micro Power Systems FEATURES APPLICATIONS • • • • • • • • • Microprocessor Controlled Gain anci Attenuation Circuits • Microprocessor Controlled/Program liable Power Supplies
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MP7628
MP7628
T2D 85 diode
FBC 320
T2D 1 DIODE
T2D 24 DIODE
T2D 04 DIODE
IN T2D DIODE
T2D 09 diode
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diode t2d 77
Abstract: T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80
Text: MP7628 g » E X 4 5 V CMOS Quad Multiplying 8-Bit Digital-to-Analog Converter R FEATURES APPLICATIONS • • • • • • • • • • Microprocessor Controlled Gain and Attenuation Circuits • Microprocessor Controlled/Programmable Power Supplies
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MP7628
MP7529B
P7628
diode t2d 77
T2D 21 diode
T2D 24 DIODE
T2D 40 DIODE
FBC 320 a
BA 4213
T2D 80 diode
T2D 09 diode
T2D 27 diode
diode t2d 80
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MP7680JN
Abstract: No abstract text available
Text: MP7680 5 V CM O S 12-Bit Quad Double-Buffered Multiplying Digita!-to-Analog Converter 2B TEX AR FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
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MP7680
12-bit
MP7680
MP7680JN
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T2D 52 diode
Abstract: T2D 00 DIODE T2D 80 diode am/T2D DIODE
Text: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW N» E 722 1 DUAL ISOLATED DC/DC CONVERTER FEATURES APPLICATIONS • DUAL ISOLATED ±5V TO ±16V OUTPUTS • MEDICAL EQUIPMENT • HIGH BREAKDOWN VOLTAGE: 8000V Test • INDUSTRIAL PROCESS CONTROL
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40V/60HZ
T2D 52 diode
T2D 00 DIODE
T2D 80 diode
am/T2D DIODE
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T2D 24 DIODE
Abstract: T2d 43 diode
Text: MP7680 5 V C M O S 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter FEATURES BENEFITS • • • • • • • • • • Reduced Board Space; Lower System Cost. • Independent Control of DACs • Excellent DAC-to-DAC Matching and Tracking
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MP7680
12-Bit
12-bit
3455blfl
3422bl6
QDQ741Q
T2D 24 DIODE
T2d 43 diode
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T2D 87 diode
Abstract: T2D 49 DIODE Rectifier t2d
Text: Data Sheet No. PD-9.707A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7130 IRHM8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAO HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs
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IRHM7130
IRHM8130
1x100
1x10s
1X106
IRHM7130D
IRHM7130U
O-254
IL-S-19600
H-202
T2D 87 diode
T2D 49 DIODE
Rectifier t2d
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HP5082-2835
Abstract: MP7680 MP7680JE MP7680JN MP7680KE MP7680KN
Text: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
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12-bit
TTL75
MP7680
34B2bia
3425fcilfl
00G77Ã
HP5082-2835
MP7680
MP7680JE
MP7680JN
MP7680KE
MP7680KN
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T2D 44 diode
Abstract: T2D DIODE 44 T2D DIODE 42 T2d 03 diode T2D 37 DIODE T2D DIODE 43 T2D 24 DIODE T2D DIODE 32 T2D diode t2d 17 diode
Text: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
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MP7680
12-Bit
TTL75
22blA
00Q77
00G77
T2D 44 diode
T2D DIODE 44
T2D DIODE 42
T2d 03 diode
T2D 37 DIODE
T2D DIODE 43
T2D 24 DIODE
T2D DIODE 32
T2D diode
t2d 17 diode
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BUF601
Abstract: BUF600
Text: BUF600/601 Or, Call Customer Service at 1-800-548-6132 USA Only FEATURES APPLICATIONS • OPEN-LOOP BUFFER • VIDEO BUFFER/LINE DRIVER • INPUT/OUTPUT AMPLIFIER FOR MEASUREMENT EQUIPMENT • PORTABLE SYSTEMS • TRANSMISSION SYSTEMS • TELECOMMUNICATIONS
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BUF600/601
600V/ps,
320MHz,
900MHz,
300MHz
BUF600/601
600V/ns
320MHz
17313LS
BUF601
BUF600
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digi20
Abstract: LM-0355MVWB
Text: ¡E D Light Emitting D io d e s / L e a d e d ty p e Pin Arrangement Diagram/Internal Circuit Diagram Single Digit LED Numeric Displays • L A 301 B/L series •L A -4 0 1 D/N series Pin Arrangement Diagram Internal Circuit Diagram 9 Pin Arrangement Diagram
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