IGTH20N50AD Search Results

IGTH20N50AD Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IGTH20N50AD		Harris Semiconductor	Power MOSFET Data Book 1990		Scan	PDF
IGTH20N50AD		International Rectifier	Transistor / IGBT		Scan	PDF

IGTH20N50AD Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PJ 986 Abstract: pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD IGTH20N50AD Text: - Insulated-Gate Bipolar Transistors IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD File Number 2271 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs	OCR Scan	PDF	IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD IGTH20N40D, IGTH20N50AD PJ 986 pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD
IGT4E10 Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A Text: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s	OCR Scan	PDF	0QS714 O-204AA O-218AC O-220AB 2N6975 2N6977 IGTM10N40 IGTM10N40A IGTM20N40 IGTM20N40A IGT4E10 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A

Catalog Datasheet

MFG & Type

PDF

Document Tags

PJ 986

Abstract: pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD IGTH20N50AD
Text: - Insulated-Gate Bipolar Transistors IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD File Number 2271 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs

OCR Scan

PDF

IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD IGTH20N40D, IGTH20N50AD PJ 986 pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD

IGT4E10

Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
Text: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s