DIN 16901 140
Abstract: DIN 16901 130 9BJE ISO 2768-M DIN ISO 2768-M FS300R17KE3 cm6b
Text: Technische Information / technical information FS300R17KE3 IGBT-Module IGBT-modules EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data
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FS300R17KE3
DIN 16901 140
DIN 16901 130
9BJE
ISO 2768-M
DIN ISO 2768-M
FS300R17KE3
cm6b
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FP10R06KL4
Abstract: No abstract text available
Text: Technische Information / technical information FP10R06KL4_B3 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! "# # ! / $ %&' # %, ( 0 *1 %&' ( %, ( )*1 %&' ( /* ! $ 7 # 8( ! ; # + < ; "# # )*
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FP10R06KL4
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FZ600R12KE3
Abstract: No abstract text available
Text: Technische Information / technical information FZ600R12KE3_B1 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values # $ % & & # 2- 2 & < # @ @ & % . A & $ ' * +,- ./01 '/ * 3 ,-4 '() * + ,'/ * +,-4 '() * + ,-
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FZ600R12KE3
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information BSM600GA120DLCS IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM600GA120DLCS
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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E3224
E3224
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 15 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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GW40N120
Abstract: GW40N120KD STGW40N120 STGW40N120KD GWA40N120KD STGWA40N120KD
Text: STGW40N120KD STGWA40N120KD 40 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode
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STGW40N120KD
STGWA40N120KD
O-247
GW40N120KD
GWA40N120KD
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GW40N120
STGW40N120
STGWA40N120KD
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2ED020I12-F1
Abstract: 2ed020i12 2ED020I12-F general purpose DUAL LOW SIDE DRIVER 2ED020I12 IGBT SCHEMATIC 2ED020I12F P-DSO-18-1 2ED020I12 IGBT driver circuit diagram
Text: Datasheet Prepared by: Andreas Volke Approved by: Michael Hornkamp S/N: 010-04 Date of publication: 10.05.2004 Status: Preliminary Data EiceDRIVER 2ED020I12-F Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules eupec GmbH Max-Planck-Straße 5
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2ED020I12-F
D-59581
2ED020I12-F1
2ed020i12
2ED020I12-F
general purpose DUAL LOW SIDE DRIVER
2ED020I12 IGBT SCHEMATIC
2ED020I12F
P-DSO-18-1
2ED020I12 IGBT driver circuit diagram
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GW30NC60VD
Abstract: STGW30NC60VD schematic diagram UPS schematic diagram UPS 600 Power free schematic diagram UPS inverter
Text: STGW30NC60VD 40 A, 600 V, very fast IGBT Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off
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STGW30NC60VD
O-247
GW30NC60VD
GW30NC60VD
STGW30NC60VD
schematic diagram UPS
schematic diagram UPS 600 Power free
schematic diagram UPS inverter
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STGD3NC120H
Abstract: No abstract text available
Text: STGD3NC120H 7 A, 1200 V very fast IGBT Datasheet − production data Features • High voltage capability ■ High speed TAB Applications ■ Home appliance ■ Lighting 3 2 1 Description IPAK TO251 This device is a very fast IGBT developed using advanced PowerMESH technology. This
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STGD3NC120H
GD3NC120H
STGD3NC120H-1
STGD3NC120H
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OM9405SM
Abstract: Omnirel
Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246, www.omnirel.com OM9405SM DUAL IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A FEATURES • • • • Rugged Plug-In Package Built in Short Circuit Protection with Fault Output
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OM9405SM
2200pF
10kHz
100uH
OM9405SM
Omnirel
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Untitled
Abstract: No abstract text available
Text: STGW35NC120HD 32 A, 1200 V very fast IGBT Datasheet - production data Features • Low on-losses • Low on-voltage drop VCE(sat • High current capability • IGBT co-packaged with ultrafast free-wheeling diode • Low gate charge 3 2 1 • Ideal for soft switching application
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STGW35NC120HD
O-247
GW35NC120HD
DocID14378
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MIXA150R1200VA
Abstract: No abstract text available
Text: MIXA150R1200VA tentative XPT IGBT Module VCES = 1200 V I C25 = 220 A VCE sat = 1.8 V Boost Chopper Part number MIXA150R1200VA Backside: isolated 6/7 1/2 9 10 4/5 Features / Advantages: Applications: Package: V1-A-Pack ● Easy paralleling due to the positive temperature
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MIXA150R1200VA
60747and
MIXA150R1200VA
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Untitled
Abstract: No abstract text available
Text: MIXA150Q1200VA preliminary XPT IGBT Module VCES = 1200 V I C25 = 220 A VCE sat = 1.8 V Buck Chopper Part number MIXA150Q1200VA Backside: isolated 1/2 9 10 6/7 4/5 Features / Advantages: Applications: Package: V1-A-Pack ● Easy paralleling due to the positive temperature
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MIXA150Q1200VA
60747and
20130906a
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Untitled
Abstract: No abstract text available
Text: MIXA150Q1200VA tentative XPT IGBT Module VCES = 1200 V I C25 = 220 A VCE sat = 1.8 V Buck Chopper Part number MIXA150Q1200VA Backside: isolated 1/2 9 10 6/7 4/5 Features / Advantages: Applications: Package: V1-A-Pack ● Easy paralleling due to the positive temperature
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MIXA150Q1200VA
60747and
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Untitled
Abstract: No abstract text available
Text: APT100GF60JRD A dvanced pow er T e c h n o lo g y 9 600V 140A Fast IGBT&FRED The Fast IGBT is a new generation of high voltage pow er IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free wheeling ultraFast Recovery Epitaxial Diode FRED offers superior
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APT100GF60JRD
20KHz
OT-227
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VLA500-01
Abstract: 1400DU-24NF CM1400DU-24NF PIN21 400DU
Text: HYBRID 1C VLA500-01 DRIVER FOR IGBT MODULES DESCRIPTION VLA500-01 is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate-amplifier application. This device include the isolated type DC-DC converter for a
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VLA500-01
VLA500-01
1400DU-24NF
CM1400DU-24NF
PIN21
400DU
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1MBI600PX-140
Abstract: S1000 a1sy
Text: 1MBI600PX-140 IGBT Modules IGBT Modules P series 1400V/600A I Features >Small temperature dependence of the turn-off switching loss >Easy to connect in parallel »Wide RBSOA square up to 2 times of rated current and high shortcircuit withstand capability
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1MBI600PX-140
400V/600A
1MBI600PX-140
S1000
a1sy
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier P D - 9. 1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1- 5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC20F
O-22QAB
6266C
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Untitled
Abstract: No abstract text available
Text: 6MBI50L-12CK50A IGBT Ä ± /< 7 — L SERIES) : Outline Drawings IGBT MODULE : Features • y J -'s i? • UtlSfflVJE High Speed Switching Low Saturation Voltage • U JE fcttl ( M O S * - h flliS ) • Voltage Drive Variety of Power Capacity Series : A p p lic a tio n s
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6MBI50L-12CK50A)
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AP 4750
Abstract: No abstract text available
Text: 2MBI50F-060 50A IGBT Outline Drawings IGBT MODULE | ¿ 3 .0 2-05-4 : Features • fe ta * n « /± 10.0 | 2 3.0 10.0 10.0 — Low Saturation Voltage • /± iE i!i (M O S -y — H H iS ) • Voltage Drive Variety of Power Capacity Series Tab ¡type terminals
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2MBI50F-060
AP 4750
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Untitled
Abstract: No abstract text available
Text: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings
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N60U1
N60AU1
O-247
4hflb22b
20N60U1
20N60AU1
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