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    IGBT TRR Search Results

    IGBT TRR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT TRR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GAE75BA60

    Abstract: No abstract text available
    Text: IGBT MODULE GAE75BA60 UL;E76102 M SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.


    Original     		PDF GAE75BA60 E76102 GAE75BA60

    GAE75BA60

    Abstract: No abstract text available
    Text: IGBT MODULE GAE75BA60 UL;E76102 （M） SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.


    Original     		PDF GAE75BA60 E76102 GAE75BA60 3-M5depth12mm VCES600V 31MAX 32MAX IC75A

    4mbi400vg

    Abstract: 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060
    Text: / 4MBI400VG-060R-50 IGBT Modules IGBT MODULE V series 600V / 400A / IGBT, RB-IGBT 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)


    Original     		PDF 4MBI400VG-060R-50 4mbi400vg 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060

    GAE100BA60

    Abstract: GAE150BA60 GAE75BA60 sanrex IGBT GH-039 GH-038
    Text: IGBT MODULE GAE75BA60 UL;E76102 （M） SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.


    Original     		PDF GAE75BA60 E76102 GAE75BA60 3-M5depth12mm VCES600V 31MAX 32MAX IC75A GAE100BA60 GAE150BA60 sanrex IGBT GH-039 GH-038

    Untitled

    Abstract: No abstract text available
    Text: 10-FZ06NBA084FP-M306L48 preliminary datasheet Switching Definitions INPUT BOOST MOSFET+IGBT General conditions = 125 °C Tj = 4Ω Rgon IGBT Rgoff IGBT = 4Ω INPUT BOOST MOSFET+IGBT Figure 1 MOSFET turn off delayed by 100ns INPUT BOOST MOSFET+IGBT Figure 2


    Original     		PDF 10-FZ06NBA084FP-M306L48 100ns VGE10% Tjmax-25Â 00V/84A

    SCR Inverter

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: • 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT.  NEAR HERMETIC PACKAGE.  USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES.


    Original     		PDF SPM1003 SCR Inverter

    GT60M303 application

    Abstract: GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)


    Original     		PDF GT60M303 GT60M303 application GT60M303

    GSA400BA60

    Abstract: jc31 welder inverter
    Text: IGBT MODULE GSA400BA60 UL;E76102 M SanRex IGBT Module GSA400BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across each IGBT.


    Original     		PDF GSA400BA60 E76102 GSA400BA60 jc31 welder inverter

    GT60M303

    Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		PDF GT60M303 GT60M303 GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    GSA300AA120

    Abstract: No abstract text available
    Text: IGBT MODULE GSA300AA120 UL;E76102 （M） SanRex IGBT Module GSA300AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across IGBT.


    Original     		PDF GSA300AA120 E76102 GSA300AA120 Ic300A VCES1200V depth11mm 63MAX 25MAX 36MAX 109MAX

    dc welder

    Abstract: sanrex IGBT welder inverter AC welder IGBT circuit igbt ac motor speed control IGBT welder circuit GSA400AA120
    Text: IGBT MODULE GSA400AA120 UL;E76102 M SanRex IGBT Module GSA400AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across each IGBT.


    Original     		PDF GSA400AA120 E76102 GSA400AA120 dc welder sanrex IGBT welder inverter AC welder IGBT circuit igbt ac motor speed control IGBT welder circuit

    igbt 1200v 600a

    Abstract: GSA300AA120 INVERTER FOR motor Inverter Welder sanrex IGBT 30v igbt gate ratings welder inverter Soft Recovery Diode 30V 600A igbt
    Text: IGBT MODULE GSA300AA120 UL;E76102 M SanRex IGBT Module GSA300AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across each IGBT.


    Original     		PDF GSA300AA120 E76102 GSA300AA120 igbt 1200v 600a INVERTER FOR motor Inverter Welder sanrex IGBT 30v igbt gate ratings welder inverter Soft Recovery Diode 30V 600A igbt

    GAE75AA120

    Abstract: VCES1200V
    Text: IGBT MODULE GAE75AA120 UL;E76102 （M） SanRex IGBT Module GAE75AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across


    Original     		PDF GAE75AA120 E76102 GAE75AA120 31MAX 32MAX VCES1200V IC75A 3-M5depth12mm VCES1200V

    sanrex IGBT

    Abstract: GATE VOLTAGE FOR 300A ,600V IGBT diode 230 SWITCHING VOLTAGE FOR A 300A IGBT MODULE GAE300BA60 igbt 600V 300A IGBT 300A
    Text: IGBT MODULE GAE300BA60 UL;E76102 M SanRex IGBT Module GAE300BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across


    Original     		PDF GAE300BA60 E76102 GAE300BA60 sanrex IGBT GATE VOLTAGE FOR 300A ,600V IGBT diode 230 SWITCHING VOLTAGE FOR A 300A IGBT MODULE igbt 600V 300A IGBT 300A

    GAE100BA60

    Abstract: No abstract text available
    Text: IGBT MODULE GAE100BA60 UL;E76102 （M） SanRex IGBT Module GAE100BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across


    Original     		PDF GAE100BA60 E76102 GAE100BA60 31MAX 32MAX VCES600V IC100A 3-M5depth12mm

    igbt module

    Abstract: sanrex IGBT GAE75AA120
    Text: IGBT MODULE GAE75AA120 UL;E76102 M SanRex IGBT Module GAE75AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across


    Original     		PDF GAE75AA120 E76102 GAE75AA120 igbt module sanrex IGBT

    GAE100AA120

    Abstract: No abstract text available
    Text: IGBT MODULE GAE100AA120 UL;E76102 M SanRex IGBT Module GAE100AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across


    Original     		PDF GAE100AA120 E76102 GAE100AA120

    4MBI300VG-120R-50

    Abstract: 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A
    Text: / 4MBI300VG-120R-50 IGBT Modules IGBT MODULE V series 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure


    Original     		PDF 4MBI300VG-120R-50 4MBI300VG-120R-50 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A

    600V 200A igbt MOTOR SPEED CONTROL

    Abstract: GAE200BA60 diode 230 IGBT 600V 200A
    Text: IGBT MODULE GAE200BA60 UL;E76102 M SanRex IGBT Module GAE200BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across


    Original     		PDF GAE200BA60 E76102 GAE200BA60 600V 200A igbt MOTOR SPEED CONTROL diode 230 IGBT 600V 200A

    GAE200AA120

    Abstract: sanrex IGBT
    Text: IGBT MODULE GAE200AA120 UL;E76102 M SanRex IGBT Module GAE200AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across


    Original     		PDF GAE200AA120 E76102 GAE200AA120 sanrex IGBT

    GAE100BA60

    Abstract: GATE VOLTAGE FOR 100A ,300V IGBT
    Text: IGBT MODULE GAE100BA60 UL;E76102 M SanRex IGBT Module GAE100BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across


    Original     		PDF GAE100BA60 E76102 GAE100BA60 GATE VOLTAGE FOR 100A ,300V IGBT

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    GAE100AA120

    Abstract: diode 6-7
    Text: IGBT MODULE GAE100AA120 UL;E76102 （M） SanRex IGBT Module GAE100AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across


    Original     		PDF GAE100AA120 E76102 GAE100AA120 31MAX 32MAX VCES1200V IC100A 3-M5depth12mm diode 6-7