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    IGBT RECTIFIER Search Results

    IGBT RECTIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT RECTIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FP15R12W1T4

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FP15R12W1T4_B11 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage


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    FP15R12W1T4 PDF

    FP10R12W1T4

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FP10R12W1T4_B11 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage


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    FP10R12W1T4 PDF

    FP15R12W1T4

    Abstract: QO120
    Text: Technische Information / technical information IGBT-Module IGBT-modules FP15R12W1T4_B3 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage


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    FP15R12W1T4 QO120 PDF

    FP10R12W1T4

    Abstract: igbtinverter
    Text: Technische Information / technical information IGBT-Module IGBT-modules FP10R12W1T4_B3 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage


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    FP10R12W1T4 igbtinverter PDF

    FP25R12W2T4

    Abstract: NA0026
    Text: Technische Information / technical information IGBT-Module IGBT-modules FP25R12W2T4 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage


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    FP25R12W2T4 FP25R12W2T4 NA0026 PDF

    RURU8060

    Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
    Text: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers


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    FGS15N40L OT-227 HGT1N30N60A4D HGT1N40N60A4D O-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 RURU8060 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor PDF

    M57962AL

    Abstract: IPM Inverter vla531 VLA500-01R M57962 PM200CL1A120 VLA502 MITSUBISHI ipm MODULES ps IGBT 600V 12A VLA500K-01R
    Text: IGBT gate drivers DC-DC converters Apr. 2010 PoWer Module Division ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 1 /30 Pre-regulator AC200V or AC440V RECTIFIER VLA31X Isolated DC-DC converter IGBT driver VLA106 VLA503 VLA106 VLA503 VLA106 IGBT Module


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    AC200V AC440V VLA106 VLA31X VLA503 M57962AL IPM Inverter vla531 VLA500-01R M57962 PM200CL1A120 VLA502 MITSUBISHI ipm MODULES ps IGBT 600V 12A VLA500K-01R PDF

    mosfet 10a 600v

    Abstract: D-12 IRGBC20S rectifier IGBT IRGBC20S IGBT
    Text: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S


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    IRGBC20S O-220AB mosfet 10a 600v D-12 IRGBC20S rectifier IGBT IRGBC20S IGBT PDF

    400V igbt dc to dc buck converter

    Abstract: semikron SKm 123D semikron SKm 50 GB 123D SEMITEACH single phase inverter IC IGBT 123D Semitrans inverter rectifier B6U 380 single phase inverter IGBT b6u b6ci
    Text: SEMISTACK - IGBT Circuit Irms A Vac / Vdcmax Types B6CI 30 440 / 750 SEMITEACH - IGBT Symbol Conditions Irms SEMITRANS Stack1) Three-phase rectifier + inverter with brake chopper SEMITEACH - IGBT SKM 50 GB 123D SKD 51 P3/250F Features VCES VCE(SAT) VGES


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    F/400V P3/250F 400V igbt dc to dc buck converter semikron SKm 123D semikron SKm 50 GB 123D SEMITEACH single phase inverter IC IGBT 123D Semitrans inverter rectifier B6U 380 single phase inverter IGBT b6u b6ci PDF

    D-12

    Abstract: IRGBC20S IRGBC20S IGBT
    Text: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S


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    IRGBC20S O-220AB D-12 IRGBC20S IRGBC20S IGBT PDF

    D-12

    Abstract: IRGBC20S
    Text: Previous Datasheet Index Next Data Sheet IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications.


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    IRGBC20S O-220AB D-12 IRGBC20S PDF

    VS-GB70LA60UF

    Abstract: No abstract text available
    Text: VS-GB70LA60UF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier


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    VS-GB70LA60UF OT-227 E78996 2002/95/EC 11-Mar-11 VS-GB70LA60UF PDF

    "SOT-227 B" dimensions

    Abstract: No abstract text available
    Text: VS-GB70NA60UF www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier


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    VS-GB70NA60UF OT-227 E78996 2002/95/EC 11-Mar-11 "SOT-227 B" dimensions PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB70NA60UF www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier


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    VS-GB70NA60UF OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB70NA60UF www.vishay.com Vishay Semiconductors “High Side Chopper” IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier


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    VS-GB70NA60UF OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    VS-GB70LA60UF

    Abstract: No abstract text available
    Text: VS-GB70LA60UF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier


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    VS-GB70LA60UF OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VS-GB70LA60UF PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB70NA60UF www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier


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    VS-GB70NA60UF OT-227 E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    C82 diode

    Abstract: C81 diode
    Text: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz


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    10kHz GA150TD120U 150TD C82 diode C81 diode PDF

    A/smd diode t53

    Abstract: No abstract text available
    Text: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast,


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    IRG4ZC70UD SMD-10 A/smd diode t53 PDF

    18672

    Abstract: 100TS120U
    Text: International IOSR Rectifier PD - 5.060A GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode


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    8-40kHz 200kHz GA100TS120U A100TS120U 18672 100TS120U PDF

    IQR 336

    Abstract: 5056B IOR 336
    Text: International IQR Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.056B GA150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode


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    8-40kHz 200kHz GA150TS60U A150TS60U IQR 336 5056B IOR 336 PDF

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1627 International IO R Rectifier IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,


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    IRG4ZH70UD SMD-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: International TOR Rectifier PD -5.048 PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces - 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


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    GA500TD60U PDF

    100TS60U

    Abstract: 74c74 ETS-D
    Text: International IO R Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.055A GA100TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES= 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode


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    8-40kHz 200kHz GA100TS60U 100TS60U 100TS60U 74c74 ETS-D PDF