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    IGBT MODULE 1500A Search Results

    IGBT MODULE 1500A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT MODULE 1500A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FZ750R65KE3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FZ750R65KE3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD750S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF DD750S65K3

    FZ750R65KE3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ750R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ750R65KE3 Isolationseigenschaftenvon10 FZ750R65KE3

    DD750S65K3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD750S65K3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF DD750S65K3 Isolationseigenschaftenvon10 60yprovideapplicationnotes. DD750S65K3

    2T920

    Abstract: BSM75GP60
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung


    Original     		PDF BSM75GP60 2T920 BSM75GP60

    2T920

    Abstract: BSM75GP60
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung


    Original     		PDF BSM75GP60 DB-PIM-10 2T920 BSM75GP60

    transistor 600v

    Abstract: FF150R12KS4
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF150R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF FF150R12KS4 transistor 600v FF150R12KS4

    FF150R12KS4

    Abstract: igbt 150a 600v
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF150R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF FF150R12KS4 FF150R12KS4 igbt 150a 600v

    BSM75GP60

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung


    Original     		PDF BSM75GP60 BSM75GP60

    ff150r12ks4

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF150R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF FF150R12KS4 FF150R12KS4

    MBN1500E33E2

    Abstract: ls290 MBN1500E33E nff 16-102 IC1500 GC 72
    Text: IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08002 MBN1500E33E2 000cycles) MBN1500E33E2 ls290 MBN1500E33E nff 16-102 IC1500 GC 72

    Hitachi DSA00281

    Abstract: 330nf 250 v
    Text: IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-10002 MBN1500E33E3 000cycles) Hitachi DSA00281 330nf 250 v

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10002 R5 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-10002 MBN1500E33E3 000cycles)

    MBN1500E33E2

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08002 R7 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08002 MBN1500E33E2 000cycles) MBN1500E33E2

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08002 R6 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08002 MBN1500E33E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R8 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles)

    ZTH 429E

    Abstract: UC 493 igbt 1500A 249E-01
    Text: Technische Information / technical information IGBT-Module IGBT-Modules FS35R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES


    Original     		PDF FS35R12KE3 769E-02 345E-03 674E-02 333E-03 052E-01 820E-01 249E-01 429E-02 709E-01 ZTH 429E UC 493 igbt 1500A 249E-01

    fs*r12ke3

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-Modules FS35R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES


    Original     		PDF FS35R12KE3 fs*r12ke3

    nf-009

    Abstract: circuit ntc-thermistor
    Text: Technische Information / technical information IGBT-Module IGBT-Modules FS35R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES


    Original     		PDF FS35R12KE3 769E-02 345E-03 674E-02 333E-03 052E-01 820E-01 249E-01 429E-02 709E-01 nf-009 circuit ntc-thermistor

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-Modules FS35R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES


    Original     		PDF FS35R12KE3 769E-02 345E-03 674E-02 333E-03 052E-01 820E-01 249E-01 429E-02 709E-01

    FF150R12KE3

    Abstract: FF150R12KE ff150r12ke3g zigbee interfacing with pc FF150
    Text: Technische Information / technical information IGBT-Module IGBT-Modules FF150R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES


    Original     		PDF FF150R12KE3 499E-02 601E-02 364E-03 187E-05 FF150R12KE3G FF150R12KE zigbee interfacing with pc FF150

    Untitled

    Abstract: No abstract text available
    Text: @ M ITEL GP400LSS16S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation DS4987 - 1.3 The GP400LSS16S is a single switch 1600V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the


    OCR Scan     		PDF GP400LSS16S DS4987 GP400LSS16S

    half bridge circuit diagram

    Abstract: lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams GP200MHB12S UPS circuit diagram
    Text: @ MITEL GP200MHB12S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4339 - 4.2 The GP200MHB12S is a single switch 1200V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the


    OCR Scan     		PDF GP200MHB12S DS4339 GP200MHB12S half bridge circuit diagram lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams UPS circuit diagram