40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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Untitled
Abstract: No abstract text available
Text: IXA40RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling
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IXA40RG1200DHGLB
60747and
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Untitled
Abstract: No abstract text available
Text: IXA30RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling
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IXA30RG1200DHGLB
60747and
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Untitled
Abstract: No abstract text available
Text: IXA20RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling
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IXA20RG1200DHGLB
60747and
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Untitled
Abstract: No abstract text available
Text: For partial switching PFC Integrated IGBT and Diode Bridge Rectifier SLA5222 Features Package SLA5222 incorporates IGBT and diodes for bridge rectifier of partial switching PFC, and achieves board space reduction. Low Saturation Voltage IGBT Low VF Diode Bridge Rectifier
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SLA5222
SLA5222
SLA5222-DS
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IGBT 4000V
Abstract: isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus
Text: Contact: Donald Humbert Tel: 408-982-0700 Fax: 408-496-0670 IXYS Releases 4000V/40A IGBT to Expand its Very High Voltage VHV IGBT Family SANTA CLARA, Calif.-(BUSINESS WIRE)-Feb. 13, 2006-IXYS Corporation (NASDAQ:SYXI News) announces the release of a new 4000V/40A IGBT, the IXEL40N400. IXYS' unique offering of
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000V/40A
2006--IXYS
IXEL40N400.
IGBT 4000V
isoplus ixys mounting
IXEL40N400
ixys
IXLF19N250A
Discrete IGBTS
Igbts guide
isoplus
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Super-247 Package
Abstract: IRG4PSC71UD
Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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1682A
IRG4PSC71UD
Super-247
O-247
Super-247 Package
IRG4PSC71UD
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Untitled
Abstract: No abstract text available
Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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1682A
IRG4PSC71UD
Super-247
O-247
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diode lt 247
Abstract: IRG4PSC71UD TB diode 1084 GE
Text: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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IRG4PSC71UD
Super-247
O-247
diode lt 247
IRG4PSC71UD
TB diode
1084 GE
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IRFPS37N50A
Abstract: IRGPS40B120UP 312V marking code igbt 40a 600v
Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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5899A
IRGPS40B120UP
Super-247
Super-247TM
IRFPS37N50A
IRFPS37N50A
IRGPS40B120UP
312V marking code
igbt 40a 600v
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TRANSISTOR N 1380 600 300 SC
Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
Text: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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4295A
IRGPS40B120U
Super-247
Super-247TM
5M-1994.
O-274AA
TRANSISTOR N 1380 600 300 SC
MOSFET 40A 600V
IRGPS40B120U
mosfet 1200V 40A
1200V,
IGBT 500A 1200V
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Abstract: No abstract text available
Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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94295D
IRGPS40B120U
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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mosfet 1200V 40A
Abstract: IRFPS37N50A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A
Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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94295D
IRGPS40B120U
Super-247
Super-247TM
Super-247TM
IRFPS37N50A
IRFPS37N50A
mosfet 1200V 40A
IRGPS40B120U
800V 40A mosfet
94295D
*40b120u
ir igbt 1200V 40A
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mosfet 1200V 40A
Abstract: *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRFPS37N50A IRGPS40B120U transistor 600v 500a 312V marking code l200h
Text: PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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94295B
IRGPS40B120U
Super-247
Super-247TM
Super-247TM
IRFPS37N50A
IRFPS37N50A
mosfet 1200V 40A
*40b120u
ir igbt 1200V 40A
800V 40A mosfet
igbt 40A 600V
IRGPS40B120U
transistor 600v 500a
312V marking code
l200h
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Untitled
Abstract: No abstract text available
Text: PD - 95892 IRG4PSH71UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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IRG4PSH71UPbF
40kHz
200kHz
Super-247
O-247
pow74AA)
IRFPS37N50A
IRFPS37N50A
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Untitled
Abstract: No abstract text available
Text: PD- 95899 IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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IRGPS40B120UP
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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Untitled
Abstract: No abstract text available
Text: PD- 94295C IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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94295C
IRGPS40B120U
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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UC3726
Abstract: UC3727 igbt testing procedure waveform generator specifications
Text: DN-60 Design Note UC3726 / UC3727 IGBT Isolated Driver Pair Evaluation Kit Testing Procedure by : Bill Andreycak The UC3726/UC3727 IGBT isolated driver pair evaluation kit is available for design engineers to verify the performance and functionality of this
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DN-60
UC3726
UC3727
UC3726/UC3727
U-143A
DG-200A
DN-57
igbt testing procedure
waveform generator specifications
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square pulse generator ic
Abstract: igbt testing procedure IGBT DRIVER SCHEMATIC Pulse Generator Frequency Generator 10kHz Andreycak gate DRIVER IGBT IGBT Driver Power Schematic ISOLATED GATE DRIVER square wave generator ic
Text: DN-60 Design Note UC3726 / UC3727 IGBT Isolated Driver Pair Evaluation Kit Testing Procedure by : Bill Andreycak The UC3726/UC3727 IGBT isolated driver pair evaluation kit is available for design engineers to verify the performance and functionality of this
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DN-60
UC3726
UC3727
UC3726/UC3727
U-143A
DG-200A
DN-57
square pulse generator ic
igbt testing procedure
IGBT DRIVER SCHEMATIC
Pulse Generator
Frequency Generator 10kHz
Andreycak
gate DRIVER IGBT
IGBT Driver Power Schematic
ISOLATED GATE DRIVER
square wave generator ic
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Rectifier, 70A, 1000V
Abstract: IRFPS37N50A IRG4PSH71U 70A 1200V IGBTS 1200v fet transistor 58w
Text: PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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IRG4PSH71U
40kHz
200kHz
Super-247
O-247
Super-247TM
O-274AA
IRFPS37N50A
IRFPS37N50A
O-247TM
Rectifier, 70A, 1000V
IRG4PSH71U
70A 1200V IGBTS
1200v fet
transistor 58w
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IGBT with Diode Low Saturation Voltage IGBT with Low Forward Drop Diode Electrically Isolated Mounting Tab IXGR 50N60A2U1 VCES IC25 VCE sat = 600 V = 75 A = 1.7 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings
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50N60A2U1
ISOPLUS247
E153432
IC110
IF110
50N60A2U1
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Untitled
Abstract: No abstract text available
Text: PD - 91682 International IQ R Rectifier IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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IRG4PSC71UD
Super-247
O-247
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Super-247 Package
Abstract: IRG4PSC71UD
Text: International IÖR Rectifier PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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Super-247
O-247
1682A
IRG4PSC71UD
--600V
Liguria49,
Super-247 Package
IRG4PSC71UD
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