Mitsubishi IPM module
Abstract: igbt module testing IGBT 1500 mitsubishi semiconductors power modules mos trench power igbt IGBT cross MITSUBISHI IGBT 100A mitsubishi electric igbt module ac igbt Mitsubishi Electric IGBT MODULES
Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS FEATURED PRODUCTS TECHNOLOGY AND TREND Featured Products Technology and Trend The IGBT and IPM products in this data book feature the 3rd Generation H-Series IGBT chip and a new generation free-wheel diode. A brief description of this technology
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Text: AUIRGP65G40D0 AUIRGF65G40D0 AUTOMOTIVE GRADE ULTRAFAST IGBT WITH ULTRAFAST SOFT RECOVERY DIODE CooliRIGBT Features • • • • • • • Designed And Qualified for Automotive Applications Ultra Fast Switching IGBT:70-200kHz Extremely Low Switching Losses
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AUIRGP65G40D0
AUIRGF65G40D0
70-200kHz
O-247AD
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Untitled
Abstract: No abstract text available
Text: AUIRG4PH50S AUTOMOTIVE GRADE Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES =1200V Features Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency
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AUIRG4PH50S
O-247AC
O-247AC
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mosfet base induction heat circuit
Abstract: mitsubishi electric igbt module mitsubishi induction traction motor IGBT module FZ IGBT parallel igbt for HIGH POWER induction heating Igbt base induction heat circuit ieee 1000 POWEREX igbtmod igbtmod mitsubishi
Text: The Latest Advances in Industrial IGBT Module Technology Eric R. Motto John F. Donlon Application Engineering Powerex Inc. Youngwood PA, USA Application Engineering Powerex Inc. Youngwood PA, USA Abstract— More than ten years have elapsed since IGBT modules
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PC928
Abstract: pc928 application E64380 8grc
Text: PC928 Shortcircuit Protector Circuit Built-in OPIC Photocoupler Suitable for Inverter-Driving IGBT PC928 ❈ TÜV VDE 0884 approved type is also available as an option. • Outline Dimensions ■ Features 1. Built-in IGBT shortcircuit protector circuit
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PC928
000Vrms
E64380
PC928
pc928 application
E64380
8grc
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PC928
Abstract: E64380 2 anode igbt inverter circuit diagram pc928 application 000-PFRC
Text: PC928 Shortcircuit Protector Circuit Built-in OPIC Photocoupler Suitable for Inverter-Driving IGBT PC928 ❈ TÜV VDE 0884 approved type is also available as an option. • Outline Dimensions ■ Features 1. Built-in IGBT shortcircuit protector circuit
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PC928
000Vrms
E64380
PC928
E64380
2 anode igbt inverter circuit diagram
pc928 application
000-PFRC
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Abstract: No abstract text available
Text: Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0413EJ0100 Rev.1.00 May 18, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1DF7RDPQ-80
R07DS0413EJ0100
PRSS0003ZE-A
O-247)
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Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF4RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0354EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF4RDPQ-80
R07DS0354EJ0100
PRSS0003ZE-A
O-247)
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0393EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1BF6RDPQ-80
R07DS0393EJ0100
PRSS0003ZE-A
O-247)
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rjh1cf5
Abstract: RJH1CF5RDPQ-80
Text: Preliminary Datasheet RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0355EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF5RDPQ-80
R07DS0355EJ0100
PRSS0003ZE-A
O-247)
rjh1cf5
RJH1CF5RDPQ-80
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RJH1CF5RDPQ-80
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0355EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF5RDPQ-80
R07DS0355EJ0100
PRSS0003ZE-A
O-247)
RJH1CF5RDPQ-80
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TRANSISTOR 9642
Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
IRG4BC20F
IRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
TRANSISTOR 9642
9544 transistor
T0247 package
what is fast IGBT transistor
IRG4PC50U
Equivalent transistors for IRG4PC50U
IRG4BC20FD 600V 16 TO220
IRGPC40U
irg4ph50ud
IRGB440U
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rjh1cf7
Abstract: single and gate ic number RJH1CF7RDPQ-80 RJH1CF7RDPQ-80#T2
Text: Preliminary Datasheet RJH1CF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0357EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF7RDPQ-80
R07DS0357EJ0100
PRSS0003ZE-A
O-247)
rjh1cf7
single and gate ic number
RJH1CF7RDPQ-80
RJH1CF7RDPQ-80#T2
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Silicon N Channel IGBT High Speed Power Switching
Abstract: RJH1CF4RDPQ-80
Text: Preliminary Datasheet RJH1CF4RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0354EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF4RDPQ-80
R07DS0354EJ0100
PRSS0003ZE-A
O-247)
Silicon N Channel IGBT High Speed Power Switching
RJH1CF4RDPQ-80
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9544 transistor
Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
assIRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
IRG4BC30UD
9544 transistor
TRANSISTOR 9642
IRG4PC50U
irg4ph50ud
igbt failure
IRG4PC40UD2
HTGB
IRGPH60UD2
IRGBC20FD
rectifier IGBT
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vla531
Abstract: inverter welding machine circuit board ups manufacturing transformer diagram 180v dc motor drive circuit diagram 300w 24v dc motor speed controller inverter 12v 220v with igbt ups circuit diagram using igbt IGBT inverter 12v 220v inverters circuit diagram igbt VLA531-01R
Text: IDC PRODUCTS for Power Electronics セレクションガイド ブック/ Selection guide book IGBTドライバ IGBT drivers IGBT drivers システム電源 DC-DCコンバータ Power units DC‐DC converters -1- February 2009 目次 / INDEX ●イサハヤ電子製品群の展開領域
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rjh1bf7
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0394EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1BF7RDPQ-80
R07DS0394EJ0100
PRSS0003ZE-A
O-247)
rjh1bf7
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AUG4PH50S
Abstract: AUIRG4PH50S
Text: PD -96301A AUIRG4PH50S AUTOMOTIVE GRADE Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES =1200V Features Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency
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-96301A
AUIRG4PH50S
O-247AC
O-247AC
AUG4PH50S
AUIRG4PH50S
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rjh1bf7
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0394EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1BF7RDPQ-80
R07DS0394EJ0100
PRSS0003ZE-A
O-247)
rjh1bf7
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0356EJ0100 Rev.1.00 May 12, 2010 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF6RDPQ-80
R07DS0356EJ0100
PRSS0003ZE-A
O-247)
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rjh1cf7
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0357EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF7RDPQ-80
R07DS0357EJ0100
PRSS0003ZE-A
O-247)
rjh1cf7
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AUG4PH50S
Abstract: AUIRG4PH50S 33A-250
Text: AUTOMOTIVE GRADE PD -96301 AUIRG4PH50S Standard Speed IGBT C INSULATED GATE BIPOLAR TRANSISTOR VCES =1200V Features Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency
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AUIRG4PH50S
O-247AC
O-247AC
AUG4PH50S
AUIRG4PH50S
33A-250
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Abstract: No abstract text available
Text: SIEM ENS LeistungsHalbleiter PowerSemiconductors Leistungs-Module IGBT 2.Generation Power Modules IGBT 2.Generation Datenbuch 05.96 Data Book 05.96
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leistungs dioden siemens
Abstract: siemens dioden siemens diodes leistungstransistoren
Text: SIEMENS Leistungs halbleiter Power Semiconductors Leistungstransistoren Diskrete IGBT Dioden Power Transistors Discrete IGBT Diodes Datenbuch 11.96 Data Book 11.96
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