rur420
Abstract: RURD420 RURD420S
Text: RURD420, RURD420S Data Sheet January 2000 File Number 3614.5 4A, 200V Ultrafast Diodes Features The RURD420 and RURD420S are ultrafast diodes with soft recovery characteristics trr < 30ns . They have low forward voltage drop and are ion-implanted epitaxial planar
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RURD420,
RURD420S
RURD420
RURD420S
rur420
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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RUR420
Abstract: RURD420 RURD420S
Text: RURD420, RURD420S Data Sheet Title UR 20, RD 0S bt A, 0V rafa odes utho eyrds terrpoon, minctor, ache ergy ted, itch wer pes, wer itch - January 2000 File Number 3614.5 4A, 200V Ultrafast Diodes Features The RURD420 and RURD420S are ultrafast diodes with soft
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RURD420,
RURD420S
RURD420
RURD420S
RUR420
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RUR420
Abstract: RURD420S RURD420S9A
Text: RURD420S Data Sheet January 2002 4A, 200V Ultrafast Diodes Features The RURD420S is an ultrafast diode with soft recovery characteristics trr < 30ns . It has low forward voltage drop and has ion-implanted epitaxial planar construction. • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <30ns
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RURD420S
RURD420S
175oC
RUR420
RURD420S9A
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RUR420
Abstract: RURD420 RURD420S rur4
Text: RURD420, RURD420S Data Sheet January 2002 4A, 200V Ultrafast Diodes Features The RURD420 and RURD420S are ultrafast diodes with soft recovery characteristics trr < 30ns . They have low forward voltage drop and are ion-implanted epitaxial planar construction.
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RURD420,
RURD420S
RURD420
RURD420S
175oC
RUR420
rur4
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Untitled
Abstract: No abstract text available
Text: RURD420S Data Sheet January 2002 4A, 200V Ultrafast Diodes Features The RURD420S is an ultrafast diode with soft recovery characteristics trr < 30ns . It has low forward voltage drop and has ion-implanted epitaxial planar construction. • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <30ns
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RURD420S
RURD420S
175lopment.
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SGW6N60UFD
Abstract: No abstract text available
Text: N-CHANNEL IGBT SGW6N60UFD FEATURES D2-PAK * High Speed Switching * Low Saturation Voltage : VCE sat = 2.1 V (@ Ic=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls
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SGW6N60UFD
SGW6N60UFD
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200v 3A IGBT
Abstract: No abstract text available
Text: N-CHANNEL IGBT SGP6N60UFD FEATURES TO-220 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.1 V (@ Ic=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls
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SGP6N60UFD
O-220
200v 3A IGBT
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5023B
Abstract: CPV363MF C-150
Text: PD - 5.023B CPV363MF Fast IGBT IGBT SIP MODULE 1 Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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CPV363MF
10kHz)
360Vdc,
C-156
5023B
CPV363MF
C-150
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022B
Abstract: CPV364MF
Text: PD - 5.022B CPV364MF Fast IGBT IGBT SIP MODULE Features • • • • 1 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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CPV364MF
10kHz)
360Vdc,
C-164
022B
CPV364MF
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C735 transistor
Abstract: transistor C733 transistor C734 diode c740 transistor c735 c733 transistor diode c735 diode C733 transistor C740 diode e c738
Text: Previous Datasheet Index Next Data Sheet PD - 5.029 CPU165MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • 1,2 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz
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CPU165MU
360Vdc,
C-740
C735 transistor
transistor C733
transistor C734
diode c740
transistor c735
c733 transistor
diode c735
diode C733
transistor C740
diode e c738
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C735 transistor
Abstract: transistor C733 c733 transistor transistor C734 C733 C738 transistor c735 diode c740 c734 diode C733
Text: PD - 5.029 CPU165MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • 1,2 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz
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CPU165MU
360Vdc,
C-740
C735 transistor
transistor C733
c733 transistor
transistor C734
C733
C738
transistor c735
diode c740
c734
diode C733
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capacitor 22n
Abstract: ZENER DIODE 24V PS21997-4 ps21997 mitsubishi semiconductors power modules E80276 dual-in-line package intelligent power module 600v 30a mitsubishi dc motor control
Text: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21997-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21997-4 INTEGRATED POWER FUNCTIONS 600V/30A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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PS21997-4/-4A/-4C/-4W
PS21997-4
00V/30A
E80276
100ns
capacitor 22n
ZENER DIODE 24V
PS21997-4
ps21997
mitsubishi semiconductors power modules
E80276
dual-in-line package intelligent power module
600v 30a
mitsubishi dc motor control
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ZENER DIODE 24V
Abstract: PS21997-4
Text: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21997-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21997-4 INTEGRATED POWER FUNCTIONS 600V/30A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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PS21997-4/-4A/-4C/-4W
PS21997-4
00V/30A
E80276
AC100V
100ns
ZENER DIODE 24V
PS21997-4
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CPV363MF
Abstract: C-150
Text: Previous Datasheet Index Next Data Sheet PD - 5.023B CPV363MF Fast IGBT IGBT SIP MODULE 1 Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to
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CPV363MF
10kHz)
360Vdc,
C-156
CPV363MF
C-150
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CPV364MF
Abstract: 022B IMS2
Text: Previous Datasheet Index Next Data Sheet PD - 5.022B CPV364MF Fast IGBT IGBT SIP MODULE Features • • • • 1 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to
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CPV364MF
10kHz)
360Vdc,
C-164
CPV364MF
022B
IMS2
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly
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lead519
B152-H9345-G2-X-7600
PX3544
PX7510
PX3560
ICE2AS01 equivalent
PX3540
Primarion PX3540
ice3br0665j
PRIMARION px3560
ice3br4765
ICE3BR1765J
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transistor c124
Abstract: C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor
Text: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGPC40FD2
10kHz)
O-247AC
C-124
transistor c124
C-118
C-123
IRGPC40FD2
C124 E S W transistor
C124 E S S transistor
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D-10
Abstract: IRGPH40FD2
Text: PD - 9.1117 IRGPH40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 1200V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGPH40FD2
10kHz)
O-247AC
C-292
D-10
IRGPH40FD2
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transistor C732
Abstract: C732 TRANSISTOR diode C726 C732 diode c729 600V 25A Ultrafast Diode IRGPC50UD2 IRGPH50U C728 IRGPH50UD
Text: PD - 9.802A IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGPC50UD2
O-247AC
C-732
transistor C732
C732 TRANSISTOR
diode C726
C732
diode c729
600V 25A Ultrafast Diode
IRGPC50UD2
IRGPH50U
C728
IRGPH50UD
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C644 transistor
Abstract: C641 transistor transistor c644 transistor C641 IRGP440UD2 C646 diode 400v 2A ultrafast
Text: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGP440UD2
O-247AC
C-648
C644 transistor
C641 transistor
transistor c644
transistor C641
IRGP440UD2
C646
diode 400v 2A ultrafast
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diode mur
Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.
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GE1001,
GE1002,
GE1003,
GE1004
GE1101,
GE1102,
GE1103,
GE1104
GE1301,
GE1302,
diode mur
600V 25A Ultrafast Diode
MUR850 diode
diode 400V 4A
igbt 1000v 80a
diode 400v 2A ultrafast
igbt 200v 30a
600v 30a IGBT
30A, 600v DIODE
igbt 200V 4A
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IRF540 n-channel MOSFET
Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.
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QD102t
IRF540 n-channel MOSFET
GES 9515
irf740,irf840
IRC540 equivalent
RTV3140
IRF540 mosfet with maximum VDS 30 V
IRF540 p-channel MOSFET
IRLC120
AN964
IRFC9140R
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Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y D A T A S H E E T N O . P D -9 .7 9 3 International S Rectifier IRGBG30FD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast Speed Co-Pack IGBT • Latch-proof Vces = 6 0 0 V • Simple gate drive • High operating frequency
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IRGBG30FD1
D-6380
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