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    IGBT 1500A Search Results

    IGBT 1500A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 1500A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FZ750R65KE3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FZ750R65KE3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD750S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF DD750S65K3

    FZ750R65KE3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ750R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ750R65KE3 Isolationseigenschaftenvon10 FZ750R65KE3

    DD750S65K3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD750S65K3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF DD750S65K3 Isolationseigenschaftenvon10 60yprovideapplicationnotes. DD750S65K3

    MBN1500E33E2

    Abstract: ls290 MBN1500E33E nff 16-102 IC1500 GC 72
    Text: IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08002 MBN1500E33E2 000cycles) MBN1500E33E2 ls290 MBN1500E33E nff 16-102 IC1500 GC 72

    Hitachi DSA00281

    Abstract: 330nf 250 v
    Text: IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-10002 MBN1500E33E3 000cycles) Hitachi DSA00281 330nf 250 v

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10002 R5 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-10002 MBN1500E33E3 000cycles)

    MBN1500E33E2

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08002 R7 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08002 MBN1500E33E2 000cycles) MBN1500E33E2

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R10 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08002 R6 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08002 MBN1500E33E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R8 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles)

    IGBT 6500V

    Abstract: Hitachi DSA00281
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R7 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles) IGBT 6500V Hitachi DSA00281

    MBN750H65E2

    Abstract: IGBT 6500V 09008
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R6 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles) MBN750H65E2 IGBT 6500V 09008

    GA150KS61U

    Abstract: ge 142
    Text: PD -94346 GA150KS61U Low Side Switch Chopper Module Ultra-FastTM Speed IGBT IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA150KS61U GA150KS61U ge 142

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1500R33HL3 VCES = 3300V IC nom = 1500A / ICRM = 3000A


    Original     		PDF FZ1500R33HL3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1500R33HL3 VCES = 3300V IC nom = 1500A / ICRM = 3000A


    Original     		PDF FZ1500R33HL3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1500R33HE3 VCES = 3300V IC nom = 1500A / ICRM = 3000A


    Original     		PDF FZ1500R33HE3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1500R33HE3 VCES = 3300V IC nom = 1500A / ICRM = 3000A


    Original     		PDF FZ1500R33HE3

    2T920

    Abstract: BSM75GP60
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung


    Original     		PDF BSM75GP60 2T920 BSM75GP60

    2T920

    Abstract: BSM75GP60
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung


    Original     		PDF BSM75GP60 DB-PIM-10 2T920 BSM75GP60

    BSM75GP60

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung


    Original     		PDF BSM75GP60 BSM75GP60

    ff150r12ks4

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF150R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF FF150R12KS4 FF150R12KS4

    transistor 600v

    Abstract: FF150R12KS4
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF150R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF FF150R12KS4 transistor 600v FF150R12KS4