Untitled
Abstract: No abstract text available
Text: M A R R HIP4080 I S S E M I C O N D U C T O R 80V/2.5A Peak, High Frequency H-Bridge Driver October 1993 Features • Description The HIP4080 is a high frequency, medium voltage H-Bridge N-Channel MOSFET driver IC, available in 20 lead plastic SOIC and DIP packages. The HIP4080 includes an input
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HIP4080
HIP4080
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2SK2288
Abstract: F30S6N K2288 MOSFET 074
Text: 6 0 V v 'J - X / f 7 —MOSFET 60 V SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2 S K 2288 F 30S 6N 60v 30a ■ R A T IN G S ■ A b s o lu te M axim um R a tin g s * Item n Symbol K [ Storage Tem perature ■?" *V -t' ■^î'in./lË Channel Tem perature
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2SK2288
F30S6N)
STO-220
K2288
2SK2288
F30S6N
K2288
MOSFET 074
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Untitled
Abstract: No abstract text available
Text: h a f r r is FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEG R Resistant N-Channel Power MOSFETs February 1998 Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS23A4D,
FSS23A4R
1-800-4-HARRIS
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2SK1681
Abstract: usim diode F30Z50 2sk16
Text: V X v 'J - X /t7 -M 0 S F E T VX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1681 F 30Z 50 500v 30 a ■ R A T IN G S A b s o lu te M a x im u m R a tin g s g m Ite m . IB- ':■# Symbol ; s M m i:- W : C o n d itio n s # m R a tin g s —5 5 ~ 1 5 0
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2SK1681
F30Z50)
2SK1681
usim diode
F30Z50
2sk16
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d8p05
Abstract: No abstract text available
Text: P *3 3 S RFD8P05, RFD8P05SM, RFP8P05 -8A, -50V, 0.300 Ohm, P-Channel Power MOSFETs July 1998 Description Features -8A, -50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,
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RFD8P05,
RFD8P05SM,
RFP8P05
developmenta00
AN7254
AN7260.
d8p05
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D8P05
Abstract: rfp8p05 625Q TA09832
Text: inteikSI RFD8P05, RFD8P05SM, RFP8P05 D ata S heet J u ly 1999 BA, 50V, 0.300 Ohm, P-Channel Power MOSFETs File N u m b e r 23 84.2 Features • 8A, 5 0V T h e se products are P -C hannel pow e r M O S F E Ts m anufactured using th e M e ga F E T process. This process,
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RFD8P05,
RFD8P05SM,
RFP8P05
TA09832.
AN7254
AN7260.
D8P05
rfp8p05
625Q
TA09832
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RFP45N06
Abstract: No abstract text available
Text: RFG45N06, RFP45N06, RF1S45N06SM in te fs il D ata S h e e t J u l y 19 99 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs File N u m b e r 3 5 7 4 .4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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RFG45N06,
RFP45N06,
RF1S45N06SM
TA49028.
45CTION
RFP4SN06,
75BVDss
RFP45N06
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75545P
Abstract: 75545S
Text: in terrii HUF75545P3, HUF75545S3S D ata S h e e t J u n e 1999 F ile N u m b e r 4 7 3 8 .1 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance • rDS ON = 0.01 O il, V q s = 10V
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HUF75545P3,
HUF75545S3S
O-220AB
O-263AB
75545P
HUF75545P3
HUF75545S3S
O-220AB
O-263AB
75545S
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Untitled
Abstract: No abstract text available
Text: V X v U - X M 7 -M 0 S F E T V X SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1695 F10W50C 500V 10A ■ R A TIN G S ■ S Ê ÎÎS ^ c Æ lÎS A b s o lu te M axim um R a tin g s m Ite m S y m b ol C h a n n e l T e m p e ra tu re Tstg Tch D r a in • S o u r c e V o lt a g e
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2SK1695
F10W50C)
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TRS2-25-1
Abstract: TA49018
Text: RFG50N06 RFP50N06 fü HARRIS U U S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Package Features JEDEC T0-220AB TOP VIEW • 5 0 A ,60V • r DS(ON) = 0.022Q DRAIN (FLANGE) • Temperature Compensating PSPICE Model
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RFG50N06
RFP50N06
T0-220AB
O-247
RFP50N06
98e-1
35e-3
83e-6)
1e-30
TRS2-25-1
TA49018
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75332s
Abstract: No abstract text available
Text: inter«! HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs Ultras Th e se N -C hannel pow e r M O S F E Ts are m anu facture d u sing the innovative U ltraFET process. T h is a dvanced proce ss te ch n olo gy
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HUF75332G3,
HUF75332P3,
HUF75332S3S
AN7254
AN7260.
75332s
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Untitled
Abstract: No abstract text available
Text: 3 RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs August 1995 Features Package • 10A,500V • JEDEC STYLE 5 LEAD TO-247 rDS ON) = 0 .4 8 0 Q • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds • Electrostatic Discharge Protected
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RFV10N50BE
O-247
RFV10N50BE
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Untitled
Abstract: No abstract text available
Text: S HARfiSS FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June1998 Features r D S O N —0.600ft • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSF450D,
FSF450R
e1998
600ft
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli
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FSS234D,
FSS234R
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: HAFRFRIS RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A,30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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RFP70N03,
RF1S70N03,
RF1S70N03SM
50e-7
84e-9
51e-8)
05e-4
11e-5)
1e-30
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Untitled
Abstract: No abstract text available
Text: JANSR2N7397 SS MAR Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.61 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSL234R4
JANSR2N7397
MIL-STD-750,
MIL-S-19500,
500ms;
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BUK10G-50DL
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch tor automotive systems and other applications.
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BUK100-50DL
so/hso25
BUK10G-50DL
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Untitled
Abstract: No abstract text available
Text: FSJ055D, FSJ055R 70A, 60V, 0.014 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 60V, rDS 0 N = 0.014£1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSJ055D,
FSJ055R
36MeV/m
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: ¡lì h a r r is U U F S S 13A 0 D , FSS1 S E M I C O N D U C T O R 12A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 12A, 100V, rOS ON = 0.1700 The Discrete Products Operation of Harris Semiconductor
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MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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1rf510
Abstract: 1RF51
Text: • M3DE271 0DS3Tfl3 g H A R R IS ÖÖO ■ HAS IRF510/511/512/513 IRF51OR/511R/512R/513R N-Channel Power MOSFETs Avalanche Energy Rated* August 19 91 Package Features • T 0 -2 2 0 A B 4.9A and 5.6A, 80V - 100V TOP VIEW • rD S °n) = 0 -5 4 0 and 0 .7 4 ÎÏ
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M3DE271
IRF510/511/512/513
IRF51OR/511R/512R/513R
IRF510,
IRF511,
IRF512,
IRF513
IRF510R,
IRF511R,
IRF512R
1rf510
1RF51
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Untitled
Abstract: No abstract text available
Text: Œ M A FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 33A, 250V, rDS 0N = 0.0800 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSJ264D,
FSJ264R
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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ifr 150 mosfet
Abstract: No abstract text available
Text: ¡ f i H R R U U S E M I C O N D U C T O R FSL913AOD, FSL913AOR I S 7 A , -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • 7A, -100V, Description = 0.300U • Total Dose - Meets Pre-RAD Specifications to 100K RAD Si
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FSL913AOD,
FSL913AOR
-100V,
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
500ms;
ifr 150 mosfet
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MOSFET 50 amp 1000 volt
Abstract: 50 Amp 100 volt mosfet 400 amp 20 volt rectifier 50 Amp 300 volt diode 15 amp 1000 Volt Rectifier OM5227SC OM5228SC OM5229SC OM5230SC OM5231SC
Text: b7fiTQ73 Q Q G G 7 M Ô 43E D 4 ¡OMNI OM5227SC OM5228SC OM5229SC OM5231SC OM523QSC OM5232SC HIGH EFFICIENCY RECTIFIER AND POWER SCHOTTKY IN ONE HERMETIC PACKAGE 0 H N I R E L CORP 15 Ampj 50 To 600 Volt, 35 n sec Rectifier And 15 Amp, 45 Volt Schottky Combined Irr»
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b7fiTQ73
OM5227SC
OM5229SC
OM5231SC
OM5228SC
OM5230SC
OM5232SC
O-258AA
OM803
MOSFET 50 amp 1000 volt
50 Amp 100 volt mosfet
400 amp 20 volt rectifier
50 Amp 300 volt diode
15 amp 1000 Volt Rectifier
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4431 mosfet
Abstract: No abstract text available
Text: S JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A,100V,rDS ON = 0.21012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS130R4
JANSR2N7399
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
4431 mosfet
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