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    IF25 Search Results

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    IF25 Price and Stock

    Vishay Electro-Films MIF2500BFKMGNHWS

    MICROWAVE RESISTOR 2016 25 OHM 1
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    DigiKey MIF2500BFKMGNHWS Tray 500 50
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    Advanced Energy Industries Inc AIF25H300N-NTL

    DC DC CONVERTER 24V 600W
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    DigiKey AIF25H300N-NTL Bulk 36 1
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    Avnet Americas AIF25H300N-NTL Tray 28 Weeks 64
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    Mouser Electronics AIF25H300N-NTL
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    Signal Transformer Inc IF-2-56

    PWR XFMR SEMI-TORO 2VA TH
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    DigiKey IF-2-56 Bulk 48
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    Onlinecomponents.com IF-2-56
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    Sager IF-2-56 48
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    Advanced Energy Industries Inc AIF25H300-NTL

    DC DC CONVERTER 24V 600W
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    DigiKey AIF25H300-NTL Bulk 64
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    Avnet Americas AIF25H300-NTL Tray 28 Weeks 64
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    Mouser Electronics AIF25H300-NTL
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    Avnet Abacus AIF25H300-NTL 38 Weeks 64
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    KEMET Corporation R76IF2560SE30J

    CAP FILM AUTO POLYPROP RAD
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    DigiKey R76IF2560SE30J Bulk 1,300
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    Newark R76IF2560SE30J Bulk 1,300
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    IF25 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IF-2-56 Signal Transformer Power Transformers, Transformers, XFRMR SEMI-TORO 2VA THRU HOLE Original PDF

    IF25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DA QG

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power Mosfet FMM 75-01F ID25 VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM = 75 A = 100 V = 25 mW 1 5 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25


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    PDF 75-01F 75-01F DA QG

    Untitled

    Abstract: No abstract text available
    Text: VWM 270-0075X2 Three phase full bridge with Trench MOSFETs VDSS = 75 V ID25 = 270 A RDS on = 2.1 mΩ L+ T1 G1 G3 T3 S3 G5 T5 S5 S1 L1 L2 L3 T2 G2 G4 T4 S4 G6 T6 S6 S2 L- Applications t MOSFET T1 - T6 Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C IF25


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    PDF 270-0075X2 20110321a 14Typ.

    Untitled

    Abstract: No abstract text available
    Text: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C


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    PDF 24N100

    VUM33-06PH

    Abstract: 33-06PH vum33 Fast Recovery Bridge Rectifier, 60A, 600V
    Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 mΩ Part name (Marking on product)


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    PDF 33-06PH VUM33-06PH 20100921b VUM33-06PH 33-06PH vum33 Fast Recovery Bridge Rectifier, 60A, 600V

    Untitled

    Abstract: No abstract text available
    Text: FMK 75-01F HiPerFETTM Power MOSFET = 75 A ID25 = 100 V VDSS Ω RDSon typ. = 18 mΩ Common Source Topology in ISOPLUS i4-PACTM 4 Preliminary data 5 T1 3 1 1 T2 2 5 Features Maximum Ratings VDSS TVJ = 25°C to 150°C 100 VGS TC = 25°C TC = 90°C IF25 IF90


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    PDF 75-01F

    1500-0075X2

    Abstract: No abstract text available
    Text: VMM 1500-0075X2 Dual Power MOSFET Module VDSS = 75 V ID25 = 1560 A RDS on = 0.38 mΩ Phaseleg Configuration 8 9 11 VDSS TVJ = 25°C to 150°C Maximum Ratings 75 V ± 20 V u VGS TC = 25°C TC = 80°C j j 1560 1240 A A IF25 IF80 TC = 25°C (diode) j TC = 80°C (diode) j


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    PDF 1500-0075X2 20100629a 1500-0075X2

    SAW Filter

    Abstract: IF SAW Filter
    Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number 820-IF252.5M-30A Product Description 252.5 MHz IF SAW Filter 30.21 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit


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    PDF 820-IF252 5M-30A J-STD-020C 2002/95/EC 52MHz SAW Filter IF SAW Filter

    SAW Filter

    Abstract: IF SAW Filter
    Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF255.0M-29A 255.0 MHz IF SAW Filter 29.66 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit


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    PDF 821-IF255 0M-29A J-STD-020C 2002/95/EC 32MHz SAW Filter IF SAW Filter

    SAW Filter

    Abstract: IF SAW Filter
    Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF255.0M-29C 255.0 MHz IF SAW Filter 29.18 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit


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    PDF 813-IF255 0M-29C J-STD-020C 2002/95/EC SAW Filter IF SAW Filter

    DIN970

    Abstract: ZY180L ZY180R
    Text: VMM 1500-0075X2 Dual Power MOSFET Module VDSS = 75 V ID25 = 1560 A RDS on = 0.38 mΩ Phaseleg Configuration 8 9 11 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C j j 1560 1240 A A IF25 IF80 TC = 25°C (diode) j


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    PDF 1500-0075X2 20100629a DIN970 ZY180L ZY180R

    ZY180R

    Abstract: UL758 ZY180L C 12 PH diode 1000-01P
    Text: VMM 1000-01P VDSS = 100 V ID25 = 1000 A Ω RDS on = 0.75 mΩ Dual Trench MOSFET Module Phaseleg Configuration Preliminary data 3 8 9 1 11 10 2 Features MOSFET T1 + T2 Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C ① ① IF25 IF80 (diode) TC = 25°C


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    PDF 1000-01P ZY180L 350mm ZY180R UL758, UL758 C 12 PH diode 1000-01P

    smd diode code SL

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6
    Text: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode


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    PDF 160-0055P3 smd diode code SL smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6

    Untitled

    Abstract: No abstract text available
    Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectiier Boost Diode VRRM = 1600 V VRRM Module for Power Factor Correction MOSFET = 600 V VDSS 60 A ID25 = 600 V = A IDAV = 106 A IF25 IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 m = 50 Part name (Marking on product)


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    PDF 33-06PH VUM33-06PH 20100921b

    SAW Filter

    Abstract: IF SAW Filter
    Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF255.0M-29B 255.0 MHz IF SAW Filter 29.66 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit


    Original
    PDF 821-IF255 0M-29B J-STD-020C 2002/95/EC 32MHz SAW Filter IF SAW Filter

    Untitled

    Abstract: No abstract text available
    Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 1.9 V RDS(on) = 120 mΩ Part name (Marking on product)


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    PDF 33-06PH VUM33-06PH 20100611a

    IF2512-GCB

    Abstract: No abstract text available
    Text: IF2512-GCB INTERFACE BOARD TECHNICAL GUIDE


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    PDF IF2512-GCB IF2512-GCB

    isoplus mosfet

    Abstract: 12V 200A Relay DA QG solar inverter solar inverter circuit starter/generator
    Text: FMM 300-0055P ID25 = 300 A = 55 V VDSS Ω RDSon typ. = 2.7 mΩ Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM 3 Preliminary data T1 5 4 1 1 T2 2 5 Features TVJ = 25°C to TVJmax 55 VGS TC = 25°C TC = 90°C IF25 IF90 body diode TC = 25°C (body diode) TC = 90°C


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    PDF 300-0055P isoplus mosfet 12V 200A Relay DA QG solar inverter solar inverter circuit starter/generator

    1600-02P

    Abstract: 1600 v mosfet VMO 1600-02P
    Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 200 V ± 20 V 1900 1600 A A ID25 ID80 TC = 25°C TC = 80°C IF25


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    PDF 1600-02P 14Source 20100302b 1600-02P 1600 v mosfet VMO 1600-02P

    Untitled

    Abstract: No abstract text available
    Text: VMM 1500-0075X2 VDSS = 75 V ID25 = 1560 A RDS on = 0.38 mΩ Dual Power MOSFET Module Phaseleg Coniguration 8 9 1 11 10 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C j j 1560 1240 A A IF25 IF80 TC = 25°C (diode) j


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    PDF 1500-0075X2 20100629a

    Untitled

    Abstract: No abstract text available
    Text: GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode


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    PDF 160-0055P3

    Untitled

    Abstract: No abstract text available
    Text: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features Maximum Ratings VDSS TVJ = 25°C to 150°C 1000 V VGS TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C (diode) TC = 90°C


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    PDF 24N100

    35N120D1

    Abstract: D-68623 IXER 35N120D1
    Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C


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    PDF 35N120D1 247TM E153432 35N120D1 D-68623 IXER 35N120D1

    Untitled

    Abstract: No abstract text available
    Text: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C


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    PDF

    NTC 303

    Abstract: robot control PS18 SV18
    Text: VDI 130-06P1 VII 130-06P1 VID 130-06P1 VIO 130-06P1 IC25 = 121 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 SV18 NTC X16 T16 NTC X16 IK10 F1 B3 PS18 X15 L9 VX18 LMN


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    PDF 130-06P1 130-06P1 NTC 303 robot control PS18 SV18