MOSFET TOSHIBA 2015
Abstract: No abstract text available
Text: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step
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2SK3476
100mA,
300mA,
500mA,
700mA,
900mA
MOSFET TOSHIBA 2015
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mmic e3
Abstract: AE364
Text: E-pHEMT MMIC AE364 Product Features Application • 30 ~ 6000MHz • GaAs E-pHEMT MMIC • Higher linearity • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard
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AE364
6000MHz
OT-89
OT-89
AE364
6000MHz
mmic e3
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RESISTOR SMD 2020
Abstract: ids 2560 mmic e3 wifi amplifier circuit
Text: E-pHEMT MMIC Product Features AE362 Application 0B 1B • 30 ~ 6000MHz • GaAs E-pHEMT MMIC • Higher linearity • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard
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AE362
6000MHz
OT-89
OT-89
AE362
6000MHz
RESISTOR SMD 2020
ids 2560
mmic e3
wifi amplifier circuit
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Untitled
Abstract: No abstract text available
Text: CSD86360Q5D www.ti.com SLPS327 – SEPTEMBER 2012 Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86360Q5D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high
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CSD86360Q5D
SLPS327
CSD86360Q5D
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Untitled
Abstract: No abstract text available
Text: CSD86360Q5D www.ti.com SLPS327 – SEPTEMBER 2012 Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86360Q5D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high
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CSD86360Q5D
SLPS327
CSD86360Q5D
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TGA4516
Abstract: ids 2560
Text: TGA4516 Ka Band 2W Power Amplifier Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in
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TGA4516
20dBm
TGA4516
1050mA
ids 2560
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Untitled
Abstract: No abstract text available
Text: CSD86360Q5D www.ti.com SLPS327A – SEPTEMBER 2012 – REVISED MAY 2013 Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86360Q5D NexFET™ power block is an optimized design for synchronous buck applications
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CSD86360Q5D
SLPS327A
CSD86360Q5D
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Untitled
Abstract: No abstract text available
Text: CSD86360Q5D www.ti.com SLPS327A – SEPTEMBER 2012 – REVISED MAY 2013 Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86360Q5D NexFET™ power block is an optimized design for synchronous buck applications
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CSD86360Q5D
SLPS327A
CSD86360Q5D
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Untitled
Abstract: No abstract text available
Text: CSD86360Q5D www.ti.com SLPS327 – SEPTEMBER 2012 Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86360Q5D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high
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CSD86360Q5D
SLPS327
CSD86360Q5D
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TGA4516
Abstract: No abstract text available
Text: Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology
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TGA4516
20dBm
1050mA
TGA4516
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Untitled
Abstract: No abstract text available
Text: Advance Product Information February 10, 2006 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology
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TGA4516
20dBm
TGA4516
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ka band gaas fet Package
Abstract: TGA4516 ka-band amplifier AMC8515
Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:
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TGA4516-TS
20dBm
TGA4516
1050mA
ka band gaas fet Package
ka-band amplifier
AMC8515
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Untitled
Abstract: No abstract text available
Text: APT40SM120J APT40SM120J 1200V, 32A, 80mΩ Silicon Carbide Power MOSFET FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS on • Buck converter SO • Short Circuit Withstand Rated • Flyback
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APT40SM120J
E145592
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Silicon Carbide Power MOSFET
Abstract: microsemi
Text: APT40SM120B_S APT40SM120B APT40SM120S 1200V, 40A, 80mΩ Silicon Carbide Power MOSFET TO -24 FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For
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APT40SM120B
APT40SM120S
25user
Silicon Carbide Power MOSFET
microsemi
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AE384
Abstract: ids 2560 RESISTOR SMD 2020 mmic e3
Text: E-pHEMT MMIC AE384 Product Features Application • 30 ~ 6000MHz • GaAs E-pHEMT MMIC • Higher linearity • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard
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AE384
6000MHz
OT-89
OT-89
AE384
6000MHz
ids 2560
RESISTOR SMD 2020
mmic e3
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ids 2560
Abstract: SiCr 30X30 SiCr resistor
Text: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 3.0µm P-Well CMOS Process Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UTIX Stepper Single or double poly
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30X30)
ids 2560
SiCr
30X30
SiCr resistor
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resistor 1k
Abstract: ids 2560 CAPACITOR Titanium 30X30
Text: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 2.0µm P-Well CMOS Process Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UT1X Stepper Single or double poly
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300mV
30X30)
resistor 1k
ids 2560
CAPACITOR Titanium
30X30
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resistor 1K
Abstract: 30X30 70210
Text: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 2.0µm N-Well CMOS Process Standard Feature ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UT1X Stepper Single or double poly
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30X30)
resistor 1K
30X30
70210
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resistor 1k
Abstract: 30X30
Text: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 1.2µm CMOS Process Standard Features ❖ ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UT1X Stepper Single or double poly
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30X30)
resistor 1k
30X30
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Untitled
Abstract: No abstract text available
Text: OVERVIEW Single Source Solutions… In Plastic Profile & History Flambeau, Inc. is a worldwide industry leader in thermoplastic manufacturing, specializing in both injection and blow molding. Flambeau possesses the largest array of proprietary stock products
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9562PS
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OMAP5430
Abstract: OMAP5432 MIPI CSI-2 Parallel bridge Toshiba eMMC 4.40 emmc pcb layout toshiba eMMC DS MIPI DPI CAMERA PARALLEL RGB TO MIPI CSI-2 TWL6041 emmc toshiba
Text: Version F EL I M Data Manual IN Multimedia Device Engineering Samples 2.0 AR OMAP5430 Public Version PR ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice.
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OMAP5430
SWPS052F
OMAP5430
OMAP5432
MIPI CSI-2 Parallel bridge
Toshiba eMMC 4.40
emmc pcb layout
toshiba eMMC DS
MIPI DPI
CAMERA PARALLEL RGB TO MIPI CSI-2
TWL6041
emmc toshiba
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23721 texas instruments
Abstract: No abstract text available
Text: TPS2560 TPS2561 www.ti.com SLVS930 – DECEMBER 2009 DUAL CHANNEL PRECISION ADJUSTABLE CURRENT-LIMITED POWER SWITCHES Check for Samples: TPS2560 TPS2561 FEATURES 1 • • • • • • • • • • • • 2 Two separate current limiting channels Meets USB Current-Limiting Requirements
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TPS2560
TPS2561
SLVS930
E169910
TPS2561
23721 texas instruments
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Untitled
Abstract: No abstract text available
Text: CO M PAN Y OF MODEL LPTJ3-2 Toroidal Inductor Surface Mount High Current Bifilar Wincing Cata 5 a 5 3 a 7 a 4. a 3 a 2 9 ia PA R A LLEL CONNECTED McaeiNu.'ncer nauctance atODC uH -.2 ^ •5 3 -2 -7 .2 •_3TJ3-2 - 1. - $ f 1 ti II II II II 1 _^ -3 -7 - 'J*T J3-2- .5
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OCR Scan
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TJ3-2-330
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hb56d25609
Abstract: No abstract text available
Text: HB56D25609A/B-85A/10A/12A 262,144-Word x 9-Bit High Density Dynamic RAM Module P in Name Pin No. 1 Vc c 16 2 CAS 17 Ag 3 DQo 18 NC 4 A« 19 5 A, 20 dq 6 D Q, 21 WE 7 A 2 22 V ss 8 A3 23 dq 9 V ss 24 NC 10 dq 11 a P in No. The HB56A25609 is a 256K x 9 dynamic RAM module, mounted
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HB56D25609A/B-85A/10A/12A
144-Word
HB56A25609
HM514256A)
256Kbit
HM51256)
30-pin
HB56A25609A)
HB56A25609B)
hb56d25609
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