IDG 650
Abstract: IDG-650 IDG650 J-STD-020D JESD22-B104C JESD22-A108C Invensense MEMS Gyroscope gyro vibratory gyroscope
Text: InvenSense Inc. 1197 Borregas Ave, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-0650B-00-05 Release Date: 05/20/10 IDG-650 Dual-Axis Gyro Product Specification A printed copy of this document is
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PS-IDG-0650B-00-05
IDG-650
IDG-650
IDG 650
IDG650
J-STD-020D
JESD22-B104C
JESD22-A108C
Invensense MEMS Gyroscope
gyro
vibratory gyroscope
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CEL9220HF13
Abstract: CEL-9220HF13
Text: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com Document Number: PS-IDG-1123B-00 Revision: 6.2 Release Date: 05/13/2011 Preliminary Product Specification IDG-1123 Dual-Axis Gyro
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PS-IDG-1123B-00
IDG-1123
IDG-1123â
CEL9220HF13
CEL-9220HF13
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Untitled
Abstract: No abstract text available
Text: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1215-00-03 Release Date: 04/13/10 IDG-1215 Dual-Axis Gyro Product Specification A printed copy of this document is
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PS-IDG-1215-00-03
IDG-1215
IDG-1215,
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CEL9220HF13
Abstract: tanaka gold wire gld Dow Corning DA6501 cel9220 CEL9220HF13H CEL-9220HF13H CEL9220HF CEL-9220HF13 Trimethylated silica cel-9220
Text: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1150B-00-05 Release Date: 07/28/08 IDG-1150 Dual-Axis Gyro Product Specification A printed copy of this document is
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PS-IDG-1150B-00-05
IDG-1150
CEL9220HF13
tanaka gold wire gld
Dow Corning DA6501
cel9220
CEL9220HF13H
CEL-9220HF13H
CEL9220HF
CEL-9220HF13
Trimethylated silica
cel-9220
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IDG-1215
Abstract: IDG1215 J-STD-020D PS-IDG-1215-00-04 Invensense MEMS Gyroscope Dual-axis ta-f480 JESD22-A101C vibratory gyroscope
Text: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1215-00-04 Release Date: 05/20/10 IDG-1215 Dual-Axis Gyro Product Specification A printed copy of this document is
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PS-IDG-1215-00-04
IDG-1215
IDG-1215,
IDG1215
J-STD-020D
PS-IDG-1215-00-04
Invensense MEMS Gyroscope
Dual-axis
ta-f480
JESD22-A101C
vibratory gyroscope
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CEL9220HF13
Abstract: CEL9220HF CEL9220 CEL9220HF13H CEL-9220HF13 cel-9220 22-A108 CEL-9220HF13H DA6501 IDG1123
Text: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1123B-00-06 Release Date: 04/13/10 IDG-1123 Dual-Axis Gyro Product Specification A printed copy of this document is
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PS-IDG-1123B-00-06
IDG-1123
CEL9220HF13
CEL9220HF
CEL9220
CEL9220HF13H
CEL-9220HF13
cel-9220
22-A108
CEL-9220HF13H
DA6501
IDG1123
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IDG 600
Abstract: IDG-300 PS-IDG-0300B-00-03 9220HF13H IDG300 Gyroscope InvenSense Inc. IDG300 IDG-300B 22-A101 CIRCUIT DESIGN FOR A CAPACITIVE MEMS GYROSCOPE
Text: InvenSense Inc. 1197 Borregas Ave, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-0300B-00-03 Release Date: 04/13/10 IDG-300B Dual-Axis Gyro Product Specification A printed copy of this document is
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PS-IDG-0300B-00-03
IDG-300B
3050B
3540B/
3550B
IDG 600
IDG-300
PS-IDG-0300B-00-03
9220HF13H
IDG300
Gyroscope
InvenSense Inc. IDG300
22-A101
CIRCUIT DESIGN FOR A CAPACITIVE MEMS GYROSCOPE
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Untitled
Abstract: No abstract text available
Text: Integrated Dual-Axis Gyro IDG-1215 FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • The IDG-1215 is an integrated dual-axis angular rate sensor gyroscope . It uses InvenSense’s proprietary and patented MEMS technology with vertically driven,
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IDG-1215
IDG-1215
15mV/Â
DS-IDG-1215B-00-01
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Untitled
Abstract: No abstract text available
Text: Integrated Dual-Axis Gyro IDG-650 FEATURES • Integrated X- and Y-axis gyros on a single chip • Two separate outputs per axis for standard and high sensitivity: X-/Y-Out Pins: 2000°/s full scale range 0.5mV/°/s sensitivity X/Y4.5Out Pins: 440°/s full scale range
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IDG-650
27mV/Â
DS-IDG-0650B-00-01
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FLM5964-4c
Abstract: No abstract text available
Text: p. .fjW-,. FLM5964-4C Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ.) • • • • • High Gain: G-j^B = 9.0dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM5964-4C
36dBm
FLM5359-4C
1100mA
FLM5964-4c
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Untitled
Abstract: No abstract text available
Text: FLM7785-18DA F| Internally Matched Power GaAs FETs I FEATURES • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q
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FLM7785-18DA
-45dBc
FLM7785-18DA
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FLM6472-12D
Abstract: SCL 1058 FLM6472-12DA
Text: FLM6472-12DA F| Internally Matched Power GaAs FETs I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-12DA
-45dBc
30dBm
FLM6472-12DA
FLM6472-12D
SCL 1058
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GaAs FETs
Abstract: No abstract text available
Text: FLM6472-8D F| «e . r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz
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FLM6472-8D
39dBm
-45dBc
28dBm
FLM6472-8D
Temperature31
GaAs FETs
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cd 1691 cp
Abstract: Y3015
Text: F| .fjU-. FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 9.5dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM 3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-12DA
-45dBc
30dBm
FLM5964-12DA
3100mA
cd 1691 cp
Y3015
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Untitled
Abstract: No abstract text available
Text: n FLM5964-6D Internally Matched Power GaAs FETs . I 1jU FEATURES • High Output Power: P-idg = 38.0dBm Typ. • High Gain: G -j^B = 10.0dB (Typ.) • High PAE: r iadd = 36% (Typ.) • Low IM3 = -45dBc@Po = 27dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q
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FLM5964-6D
-45dBc
27dBm
FLM5964-6D
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FLM6472-4C
Abstract: No abstract text available
Text: p.f jW-,. FLM6472-4C Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P-idg = 36dBm Typ.) High Gain: G-j^B = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 6.4 ~7.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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36dBm
FLM6472-4C
FLM6472-4C
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FLM5964-8C
Abstract: No abstract text available
Text: F|.fjU-,. FLM5964-8C I Internally Matched Power GaAs F E Ts FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed Package
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FLM5964-8C
FLM5964-8C
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FLM5964-18DA
Abstract: 5964-18DA 5964-18D
Text: FLM5964-18DA F| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-18DA
-45dBc
5964-18D
FLM5964-18DA
5964-18DA
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Untitled
Abstract: No abstract text available
Text: FLM6472-35DA F| r U J Il j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 45.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 6.4 ~ 7.2GHz
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FLM6472-35DA
-45dBc
FLM6472-35DA
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U/25/20/TN26/15/850/FLM6472-18DA
Abstract: No abstract text available
Text: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-18DA
-45dBc
FLM6472-18DA
VD-164
U/25/20/TN26/15/850/FLM6472-18DA
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FLM5964-25DA
Abstract: CS 5800
Text: lîrTCI FLM5964-25DA r UJI1bU Internally Matched Power GaAs F E Ts FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-25DA
44dBm
-45dBc
32dBm
FLM5964-25DA
CS 5800
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FLM6472-25D
Abstract: No abstract text available
Text: F|.9J^., FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-25DA
44dBm
-45dBc
32dBm
Te298
FLM6472-25D
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GaAs FETs
Abstract: FLM5964-4D
Text: F|.fjU. FLM5964-4D J Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ. • High Gain: G -j^B = 9.0dB (Typ.) • High PAE: r iadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q
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FLM5964-4D
36dBm
-45dBc
25dBm
FLM5359-4D
GaAs FETs
FLM5964-4D
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FLM6472-4D
Abstract: No abstract text available
Text: FLM6472-4D Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G -j^B = 8.0dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-4D
36dBm
-45dBc
25dBm
FLM6472-4D
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